A Comparison of CMOS and BiCMOS mm-Wave Receiver Circuits for Applications at 60GHz and Beyond

  • Sharon Malevsky
  • John R. Long

Implicit in the design of a 60GHz receiver front-end is the re- quirement for broadband amplification and gain flatness in order to support advanced modulation schemes. As we have seen from lower frequency wireless systems, the choice of technology often dictates the system architecture. While either silicon CMOS or silicon Bipolar technology could be used for implementation, cost, availability, performance and time to market constraints typically dictate the technology choice. The trade-offs between CMOS and Bipolar/BiCMOS technologies for mm-wave receiver circuits are outlined in this paper. Realizing low-noise performance and gain flatness over a wide bandwidth is used as a case study from both the circuit and system points of view.

Keywords

Microwave Europe Attenuation Gaas Adapter 

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Copyright information

© Springer Science + Business Media B.V 2008

Authors and Affiliations

  • Sharon Malevsky
    • 1
  • John R. Long
    • 1
  1. 1.Electronic Research LaboratoryDelft University of TechnologyNetherlands

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