Advertisement

New Regimes of Excitation and Mid-IR Lasing of Transition Metal Doped II–VI Crystals

  • Sergey Mirov
  • Vladimir Fedorov
Conference paper
Part of the NATO Science for Peace and Security Series B: Physics and Biophysics book series (NAPSB)

Recent progress in transition-metal doped II–VI semiconductor materials (mainly Cr2+:ZnSe and ZnS) make them the laser sources of choice when one needs a compact system with continuous tunability over 2–3.1 μm, output powers up to 2W, and high (up to 70%) conversion efficiency. The unique combination of technological (low-cost ceramic material) and spectroscopic characteristics (ultrabroadband gain bandwidth, high óproduct and high absorption coefficients) make these materials ideal candidates for “non-traditional” regimes of operation such as microchip and multi-line lasing. This chapter reviews these non-traditional Cr-doped mid-IR lasers as well as describes emerging Fe2+:ZnSe lasers having the potential to operate at room temperature over the spectral range extended to 3.7–5.1 μm. In addition to effective RT mid-IR lasing transition-metal doped II–VI media, being wide band semiconductors, hold the potential for direct electrical excitation. This work shows the initial steps toward achieving this goal by studying Cr2+ ion excitation into the upper laser state 5E via photoionization transitions as well as via direct electrical excitation.

Keywords: Transition-metal doped II–VI; Cr2+:ZnSe; Fe2+:ZnSe; tunable mid-infrared lasers; photoluminescence; electroluminescence; photo-conductance.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Copyright information

© Springer Science + Business Media B.V 2008

Authors and Affiliations

  • Sergey Mirov
    • 1
  • Vladimir Fedorov
    • 1
  1. 1.Department of PhysicsUniversity of Alabama at BirminghamBirminghamUSA

Personalised recommendations