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Investigation of Compressive Strain Effects Induced by STI and ESL

  • S. Zaouia
  • S. Cristoloveanu
  • A. H. Perera
Part of the NATO Science for Peace and Security Series B: Physics and Biophysics book series (NAPSB)

Two types of mechanical stress, induced by compressive etch stop layer (c-ESL) and/or shallow trench isolation (STI), are examined in advanced p-channel partially depleted SOI MOSFETs. Systematic measurements show that c-ESL significantly enhances the performance of PMOS devices without degrading the short-channel effects. The mechanical stress induced by c-ESL is inhomogeneous through the Si film, decreasing from the top to the bottom interface. We demonstrate that the combination of c-ESL and STI stress is a complex 3-D mechanism, which depends on the layout parameters: channel width (from 0.1 to 1 µm), channel length (down to 23 nm) and source/drain active surface.

Keywords

Hole Mobility Gate Length Gate Width Subthreshold Swing Mobility Enhancement 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer 2007

Authors and Affiliations

  • S. Zaouia
    • 1
    • 2
  • S. Cristoloveanu
    • 2
  • A. H. Perera
    • 1
  1. 1.Freescale semiconductorFrance
  2. 2.IMEP, MINATECFrance

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