Two types of mechanical stress, induced by compressive etch stop layer (c-ESL) and/or shallow trench isolation (STI), are examined in advanced p-channel partially depleted SOI MOSFETs. Systematic measurements show that c-ESL significantly enhances the performance of PMOS devices without degrading the short-channel effects. The mechanical stress induced by c-ESL is inhomogeneous through the Si film, decreasing from the top to the bottom interface. We demonstrate that the combination of c-ESL and STI stress is a complex 3-D mechanism, which depends on the layout parameters: channel width (from 0.1 to 1 µm), channel length (down to 23 nm) and source/drain active surface.
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© 2007 Springer
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Zaouia, S., Cristoloveanu, S., Perera, A.H. (2007). Investigation of Compressive Strain Effects Induced by STI and ESL. In: Hall, S., Nazarov, A.N., Lysenko, V.S. (eds) Nanoscaled Semiconductor-on-Insulator Structures and Devices. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-6380-0_17
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DOI: https://doi.org/10.1007/978-1-4020-6380-0_17
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-6378-7
Online ISBN: 978-1-4020-6380-0
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