This paper presents a review into the experimental studies of the effective channel mobility and intrinsic gate leakage current in triple-gate FinFET structures with doped- and undoped-channels and different gate stacks. The characteristics of narrow-fin devices are studied as compared to those of quasi-planar (very-wide fin) devices, and as a function of the fin width. Special features in the behavior of narrow FinFETs are analyzed.
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© 2007 Springer
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Rudenko, T., Kilchytska, V., Collaert, N., Nazarov, A.N., Jurczak, M., Flandre, D. (2007). Electrical Characterization and Special Properties of FINFET Structures. In: Hall, S., Nazarov, A.N., Lysenko, V.S. (eds) Nanoscaled Semiconductor-on-Insulator Structures and Devices. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-6380-0_15
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DOI: https://doi.org/10.1007/978-1-4020-6380-0_15
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-6378-7
Online ISBN: 978-1-4020-6380-0
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