An increase in threshold voltage is observed in ultra-thin body MuGFET (multi-gate FET) devices. The threshold increase is due to of lack of carriers at the classical threshold definition. A sufficient amount of carrier build-up requires additional gate voltage (0.12V in our experiment).
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Xiong, W., Cleavelin, C.R., Schulz, T., Schrüfer, K., Patruno, P., Colinge, JP. (2007). MuGFET CMOS Process with Midgap Gate Material. In: Hall, S., Nazarov, A.N., Lysenko, V.S. (eds) Nanoscaled Semiconductor-on-Insulator Structures and Devices. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-6380-0_11
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DOI: https://doi.org/10.1007/978-1-4020-6380-0_11
Publisher Name: Springer, Dordrecht
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