Abstract
A variety of surface modification and surface coating techniques are used in industry to modify the near-surface properties of the substrate materials. In the surface modification by ion implantation process, a implanted ions is formed. In the ion implantation process the substrate not only provides a backing for the surface alloy but also contributes the material that makes up part of the surface alloy. In this process, there is a slow transition between the surface modified zone and the substrate. The surface alloy composed of a combination of the substrate elements and the range of applications for such ion implantation-based surface engineering includes automotive and aerospace components, orthopedic implants, textile-manufacturing components, cutting and machining tools (e.g., punches, tapes, scoring dies, and extrusion dies), etc [1].
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REFERENCES
Nastasi M., Mayer J.W., and Hirvonen J.K., Ion-Solid Interactions: Fundamentals and Applications. Cambridge University Press, Cambridge, 1996.
Powell R.A. and Rossnagel, S., PVD for Microelectronics, 26, Academic Press (1999).
Doerner M.F. and Nix W.D., Stress and Deformation Processes in Thin Films on Substrates, CRC Critical Reviews in Solid State Materials Sciences, 1988; 14:225.
Roy R.A., Cuomo J.J., and Yee D.S., J. Vac. Sci. Tech., 1988; A6:1621.
Hoffman D.W., Thin Solid Films, 1983; 107: 353.
Koch R., J. Phys.: Condens. Matter, 1994; 6:9519.
Tu K.N., Mayer J.W. and Feldman L.C., Electronic Thin Film Science for Electrical Engineers and Materials Scientists, Macmillan Publishing Company, New York, 1992.
Ohring M., The Materials Science of Thin Films, Academic Press, New York (1992).
Stoney G.G., Proc. Roy. Soc. (London), 1909; A82:172.
Flinn P.A., Gardner D.S. and Nix W.D., IEEE Transactions on Electron Devices, 1987; ED-34:689.
Van Sambeek A.I. and Averback R.S., Mat. Res. Soc. Symp. Proc., 1996; 396:137.
Volkert C.A., J. Appl. Phys., 1991; 70:3521.
Kinosita K., Maki K., Nakamizo K. and Takeuchi K., Japanese Journal of Applied Physics, 1967; 6:42.
Misra A., Fayeulle S., Kung H., Mitchell T.E. and Nastasi M., Nucl. Inst. And Methods B, 1999; 148:211.
Kim Y.S. and Shin S.C., Mat. Res. Soc. Symp. Proc., 1995; 382:285.
Shull A.L. and Spaepen F., J. Appl. Phys., 1996; 80:6243.
Ramaswamy V., Clemens B.M. and Nix W.D., Mat. Res. Soc. Symp. Proc., 1998; 528:161.
Clemens B.M. and Bain J.A., MRS Bulletin, 1992; July:46.
Dosch H., Phys. Rev.B, 1987; 35:2137.
Noyan I.C. and Cohen J.B., Residual Stress: Measurement by Diffraction and Interpretation. Springer-Verlag, New York, 1987.
Segmuller A. and Murakami M., “X-ray Diffraction Analysis of Strains and Stresses in Thin Films”, in Treatise on Materials Science and Technology, 27, 143, edited by H. Herbert, Academic Press, New York, (1988).
Cuomo J.J. and Rossnagel S.M., Nucl. Instrum. & Meth., 1987; B19/20: 963.
Hirvonen J.K., Mater. Sci. Reports, 1991; 6:215.
Smidt F.A., Int. Mater. Rev., 1990; 35:61.
Windishmann H., Crit. Rev. Sol. St. & Mat. Sci., 1992; 19:547.
Jouan P.Y. and Lemperiere G., Vacuum, 1991; 42:927.
Kadlec S., Quaeyhaegens C., Knuyt G. and Stals L.M., Surf. Coat. Tech., 1997; 89:177.
Petrov I., Myers A., Greene J.E. and Abelson J.R., J. Vac. Sci. Technol. A, 1994; 12:2846.
Somekh R.E., J. Vac. Sci. Technol. A, 1984; 2:1285.
Rose J.H., Smith J.R., and Ferrante J., Phys. Rev. B, 1983; 28:1835.
Rose J.H., Smith J.R., Guines F., and Ferrante J., Phys. Rev. B, 1984; 29: 2963.
Banerjea A. and Smith J.R., Phys. Rev. B, 1988; 37:6632.
Ziegler J.F., Biersack J.P., and Littmark U., The Stopping and Range of Ions in Solids (Pergamon Press, New York, 1985).
Ehrhart P., Jung P., Schultz H., and Ullmaier H., in Atomic Defects in Metals, Landolt_Bornstein, Group III, 25 (Springer-Verlag, Berlin, 1992) Chapter 2.
Machlin E.S., Materials Science in Microelectronics–The Relationships between Thin Film Processing and Structure, vol. 1, pp 157–184, GIRO press, NY, (1995).
Nix W.D., and Clemens B.M., J. Mater. Res., 1999; 14:3467.
Thompson C.V., J. Mater. Res., 1999; 14:3164.
Thompson C.V. and Carel R., J. Mech. Phys. Solids, 1996; 44:657.
Cammarata R.C., Trimble T.M. and Srolovitz D.J., J. Mater. Res., 2000; 15:2468.
Phillips M.A., Ramaswamy V., Clemens B.M. and Nix W.D., J. Mater. Res., 2000; 15:2540.
Floro J.A., Hearne S.J., Hunter J.A., Kotula P., Chason E., Seal S.C. and Thompson C.V., J. Appl. Phys., 2001; 89:4886.
Seel S.C., Thompson C.V., Hearne S.J. and Floro J.A., J. Appl. Phys., 2000; 88:7079.
Freund L.B. and Chason E., J. Appl. Phys., 2001; 89:4866.
Chason E., Sheldon B.W., Freund L.B., Floro J.A. and Hearne S.J., Phys. Rev. Lett., 2002; 88:156103.
Sheldon, B.W., Lau, K.H.A., and Rajamani, A, Journal of Applied Physics, 2001; 90:5097.
Misra A., Kung H., Mitchell T.E., and Nastasi M., Journal of Materials Research, 2000; 15:756.
Cammarata R.C. and Sieradzki K., Ann. Rev. Mat. Sci., 1994; 24:215.
Spaepen F., Acta Mater., 2000; 48:31.
Cammarata R.C., Sieradzki K. and Spaepen F., J. Appl. Phys., 2000; 87: 1227.
Adams D.P., Parfitt L.J., Billelo J.C., Yalisove S.M. and Rek Z.U., Thin Solid Films, 1995; 266: 52.
Misra A., Fayeulle S., Kung H., Mitchell T.E. and Nastasi M., Applied Physics Letters, 1998; 73:891.
Misra A. and Nastasi M., Journal of Materials Research, 1999; 14:4466.
Misra A. and Nastasi M., Applied Physics Letters, 1999; 75:3123.
Misra A. and Nastasi M., Journal of Vacuum Science and Technology-A, 2000; 18:2517.
Misra A. and Nastasi M., Nucl. Inst. Methods B, 2001; 175/177:688.
Misra A. and Nastasi M., Adhesion Aspects of Thin Films, 2001; 1:17.
Ness J.N., Stobbs W.M. and Page T.F., Phil. Mag. A, 1986; 54:679.
Grovenor C.R.M., Hentzell H.T.G., and Smith D.A., Acta Metall., 1984; 32:773.
Hoffman R.W., Thin Solid Films, 1976; 34:185.
Müller K.H., J. Appl. Phys., 1987; 62:1796.
Müller K.H., J. Appl. Phys., 1986; 59:2803.
Müller K.H., Phys. Rev. B, 1987; 35:7906.
Mitra R., Hoffman R.A., Madan A. and Weertman J.R., J. Mater. Res., 2001; 16:1010.
Girifalco L.A. and Weizer V.G., Phys. Rev., 1959; 114:687.
Itoh M., Hori M. and Nadahara S., J. Vac. Sci. Tech. B, 1991; 9:149.
Hoagland R.G., LANL, unpublished work.
Sprague J.A., NRL, unpublished work.
Windischmann H., J. Appl. Phys., 1987; 62:1800.
Davis C.A., Thin Solid Films, 1993; 226:30.
Knuyt G., Lauwerens W., Stals L.M., Thin Solid Films, 2000; 370:232.
Robinson M.T., Phil. Mag., 1965; 12:741.
Robinson M.T. and Oen O.S., J. Nucl. Mater., 1982; 110:147.
Sigmund P., Radiation Effects, 1969; 1:15.
Bacon D.J., Calder A.F. and Cao F., Radiation Effects and Defects in Solids, 1997; 141:283.
Lidiard A.B. and Perrin R., Phil. Mag., 1973; 14:49.
Jain A., Loganathan S. and Jain U., Nucl. Inst. and Methods B, 1997; 127/128:43.
Clemens B.M., Kung H. and Barnett S.A., MRS Bulletin, 1999; 24:20.
Misra A. and Kung H., Advanced Engineering Materials, 2001; 3:217.
Embury J.D. and Hirth J.P., Acta Met., 1994; 42:2051.
Nix W.D., Scripta Mat., 1998; 39:545.
Misra A., Hirth J.P. and Kung H., Phil. Mag. A, 2002; 82:2935.
Thompson C.V., J. Mater. Res., 1993; 8:237.
Fleischer R.L., in The strengthening of Metals, (edited by D. Peckner), pp. 93–162, Reinhold Press, NY (1964).
Window B., Sharples F. and Savvides N., J. Vac. Sci. Tech. A, 1988; 6:2333.
Nastasi M., Fayeulle S., Lu Y.-C., and Kung H., Mat Sci. and Engr. 1998; A253:202.
Brighton D.R. and Hubler G.K., Nucl. Instr. Meth., 1987; B28: 527.
Hirsch E.H. and Varga I.K., Thin Solid Films, 1978; 52:445.
Trinkaus H., J. Nucl. Materials, 1995; 223:196.
Brongersma M.L., Snoeks E., van Dillen T., and Polman A., J. Appl. Phys., 2000; 88:59.
Mayr S.G. and Averback R.S., Phys. Rev. Lett., 2001; 87:6106.
Jain A. and Jain U., Thin Solid Films, 1995; 256:116.
Jain A., Surface and Coatings Technology, 1998; 104:20.
Krebs H.U., Luo Y., Stormer M., Crespo A., Schaaf P. and Bolse W., Appl. Phys. A, 1995; 61:591.
Gladyszewski G., Goudeau Ph., Naudon A., Jaouen C. and Pacaud J., Appl. Surf. Sci., 1993; 65/66:28.
Pranevicius L., Badawi K.F., Durand N., Delafond J., Goudeau Ph., Surf. Coatings and Technology, 1995; 71: 254.
Tamulevicius S., Pozela I. and Jankauskas J., J. Phys. D: Appl. Phys., 1998; 31:2991
Snoeks E., Boutros K.S. and Barone J., Appl. Phys. Lett., 1997; 71:267.
Hardtke C., Schilling W. and Ullmaier H., Nucl. Instr. Meth. B, 1991; 59/60: 377.
Hardtke C., Ullmaier H., Schilling W. and Gebauer M., Thin Solid Films, 1989; 175:61.
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Misra, A., Nastasi, M. (2007). RESIDUAL STRESS EVOLUTION DURING ENERGETIC PARTICLE BOMBARDMENT OF THIN FILMS. In: Sickafus, K.E., Kotomin, E.A., Uberuaga, B.P. (eds) Radiation Effects in Solids. NATO Science Series, vol 235. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-5295-8_17
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