FULL-CHIP SIMULATION OF LSI LITHOGRAPHY MASK USING MULTI-SCALE ANALYSIS
A novel multi-scale method has been proposed for estimating the in-plane displacements of LSI lithography mask. In order to verify the applicability of proposal method, the mask of simple pattern has been simulated. The simulated results agree with experimental mask feature qualitatively. Moreover, simulation for real device pattern shows full-chip simulation can be performed in practical short time by using this method.
KeywordsStiffness Matrix Stiffness Matrice Contact Layer Simple Pattern Real Device
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