Texture Evolution During Thin Film Deposition

  • Hanchen Huang

Abstract

The modeling of materials processing intrinsically spans multiple scales, in terms of both space and time. The modeling of thin film deposition, together with the accompanying texture evolution, spans 15 orders of magnitude in time, from fundamental atomic vibration period of 10−13 s to deposition duration of 102 s. This section describes challenging issues, critically presents existing approaches, and offers an outlook of future developments in the modeling of thin film texture evolution.

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References

  1. [1]
    R.A. Powell and S. Rossnagel, Thin Films: PVD for Microelectronics, Academic Press, New York, 1999.Google Scholar
  2. [2]
    G. Grest, M. Anderson, D. Srolovitz, and A. Rollett, “Abnormal grain growth in three dimensions,” Scripta Metall. Mater., 24, 661–665, 1990.CrossRefGoogle Scholar
  3. [3]
    D. Walton, H. Frost, and C. Thompson, “Development of near-bamboo and bamboo micro structures in thin film strips,” Appl. Phys. Lett., 61, 40–42, 1992.CrossRefADSGoogle Scholar
  4. [4]
    Paritosh, D.J. Srolovitz, C.C. Battaile, X. Li, and J.E. Butler, “Simulation of faceted film growth in two dimenions: microstructure, morphology and texture,” Acta Mater., 47, 2269–2281, 1999.CrossRefGoogle Scholar
  5. [5]
    D. Moldovan, D. Wolf, and S.R. Phillpot, “Linking atomistic and mesoscale simulations of nanocrystalline materials: quantitative validation for the case of grain growth,” Philos. Mag., 83, 3643–3659, 2003.CrossRefADSGoogle Scholar
  6. [6]
    L. Dong and D. Srolovitz, “Texture development mechanisms in ion beam assisted deposition,” J. Appl. Phys., 84, 5261–5269, 1998.CrossRefADSGoogle Scholar
  7. [7]
    A. Voter, “Hyperdynamics: accelerated molecular dynamics of infrequent events,” Phys. Rev. Lett., 78, 3908–3911, 1997.CrossRefADSGoogle Scholar
  8. [8]
    M.J. Brett, S.K. Dew, and T. Smy, Thin Films: Modeling of Film Deposition for Microelectronic Applications, S. Rossnagel, ed., Academic Press, New York, 1996.Google Scholar
  9. [9]
    F. Baumann and G.H. Gilmer, “3D modeling of sputter and reflow processes for interconnect metals,” IEDM Technical Digest, 89, 1995.Google Scholar
  10. [10]
    S.J. Liu, H. Huang, and C.H. Woo, “Schwoebel-Ehrlich barrier: from two to three dimensions,” Appl. Phys. Lett., 80, 3295–3297, 2002.CrossRefADSGoogle Scholar
  11. [11]
    M.G. Lagally and Z.Y Zhang, “Materials science — Thin-film Cliffhanger,” Nature, 417, 907–910, 2002.CrossRefADSGoogle Scholar
  12. [12]
    J.W. Shu, Q. Lu, W.O. Wong, and H. Huang, “Parallelization strategies for Monte Carlo simulations of thin film deposition,” Comput. Phys. Commun., 144, 34–45, 2002.MATHCrossRefADSGoogle Scholar
  13. [13]
    H. Huang and G.H. Gilmer, “Multi-lattice Monte Carlo model of thin films,” J. Compu. Aided Mater. Des., 6, 117–127, 1999.CrossRefADSGoogle Scholar
  14. [14]
    G.H. Gilmer, H. Huang, T. Diaz de la Rubia, J.D. Torre, and F. Baumann, “Lattice monte Carlo models of thin film deposition,” Thin Solid Films, 365, 189–200, 2000.CrossRefADSGoogle Scholar
  15. [15]
    H. Huang, G.H. Gilmer, and T. Diaz de la Rubia, “An atomistic simulator for thin film deposition in three dimensions,” J. Appl. Phys., 84, 3636–3649, 1998.CrossRefADSGoogle Scholar
  16. [16]
    M.O. Bloomfield, D.R Richards, and T.S. Cale, “A computational framework for modelling grain-structure evolution in three dimensions,” Philos. Mag., 83, 3549–3568, 2003.CrossRefADSGoogle Scholar
  17. [17]
    H. Huang and L.G. Zhou, “Atomistic simulator of polycrystalline thin film deposition in three dimensions,” J. Compu. Aided Mater. Des., in press, 2005.Google Scholar

Copyright information

© Springer 2005

Authors and Affiliations

  • Hanchen Huang
    • 1
  1. 1.Department of Mechanical, Aerospace and Nuclear EngineeringRensselaer Polytechnic InstituteTroyUSA

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