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Computer Aided Analysis of the Parasitic Properties of a Bipolar Transistor Cell

  • D. Donoval
  • A. Chvala
  • A. Vrbicky
Conference paper

Abstract

The computer aided analysis comprising TCAD process and device simulation as well as SPICE modeling and simulation of electrical properties of a bipolar transistor cell for analysis of experimental results is presented. A unique insight into the internal bipolar transistor structure operation allows for better understanding of electro-physical behavior of semiconductor structure and subsequent extraction of SPICE equivalent circuit model including parasitic devices. Very good agreement of simulated electrical characteristics with experimental ones confirms the validity of the derived model. The implementation of complex simulation tools for structure, device and circuit simulation into microelectronics curricula, particularly for students projects allows for better understanding of IC and systems.

Keywords

Bipolar Transistor Device Simulation Spice Modeling Planar Ohmic Contact Parasitic Property 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer Science+Business Media Dordrecht 2004

Authors and Affiliations

  • D. Donoval
    • 1
  • A. Chvala
    • 1
  • A. Vrbicky
    • 1
  1. 1.Department of MicroelectronicsSlovak University of Technology in BratislavaBratislavaSlovakia

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