Computer Aided Analysis of the Parasitic Properties of a Bipolar Transistor Cell
The computer aided analysis comprising TCAD process and device simulation as well as SPICE modeling and simulation of electrical properties of a bipolar transistor cell for analysis of experimental results is presented. A unique insight into the internal bipolar transistor structure operation allows for better understanding of electro-physical behavior of semiconductor structure and subsequent extraction of SPICE equivalent circuit model including parasitic devices. Very good agreement of simulated electrical characteristics with experimental ones confirms the validity of the derived model. The implementation of complex simulation tools for structure, device and circuit simulation into microelectronics curricula, particularly for students projects allows for better understanding of IC and systems.
KeywordsBipolar Transistor Device Simulation Spice Modeling Planar Ohmic Contact Parasitic Property
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- Bradley, B. S., Principles vs. Practices in Undergraduate Microelectronics Systems Education, In: Proceedings of MSE’01, pp. 2223, Las Vegas 2001Google Scholar
- Donoval, D., An Industrial Impact on the Microelectronic Education at Slovak University of Technology in Bratislava, Proceedings of MSE’01, pp. 16–17, Las Vegas 2001Google Scholar
- ISE DIOS and DESSIS, User manual, ver. 8.0, ISE Zurich, SwitzerlandGoogle Scholar