Abstract
The bipolar transistor is essentially a current-controlled device. As illustrated in figure 7.1a, a current must be supplied between the base and emitter terminals to produce collector current flow. The magnitude of base drive current to produce a given collector current depends on the gain, which inevitably is low for high-voltage transistors when operated in a saturated on-state.
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Reading list
International Rectifier, HEXFET Data Book, HDB-2, 1982–83.
Peter, J. M., The Power Transistor in its Environment, Thomson-CSF, Sescosem, 1978.
Siliconix Inc.,Mospower Design Catalog, January 1983.
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© 1987 B. W. Williams
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Williams, B.W. (1987). Driving the Transistor, and its Protection. In: Power Electronics. Palgrave, London. https://doi.org/10.1007/978-1-349-18525-2_7
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DOI: https://doi.org/10.1007/978-1-349-18525-2_7
Publisher Name: Palgrave, London
Print ISBN: 978-0-333-39662-9
Online ISBN: 978-1-349-18525-2
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