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Special Types of Field-Effect Transistors

  • J. T. Wallmark
  • L. G. Carlstedt
Chapter

Abstract

In 1950 Shockley succeeded in overcoming the earlier difficulties caused by the influence of surface states which had until then prevented a practical field-effect transistor. He used a pn junction gate to eliminate the effect of the surface states. The main advantage of such transistors compared to MOS transistors is their low 1 /f noise. The reason for this is that in an MOS transistor the current flows in a very thin surface layer and is therefore very sensitive to temporary surface charges. In a JFET the current flows in a channel which may be so far away from the surface that its effect is negligible. Such transistors are therefore used primarily in low noise applications.

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Further reading

  1. 1.
    S. M. Sze, Physics of Semiconductor Devices, Wiley-Interscience, New York (1969)Google Scholar
  2. 2.
    L. S. Sevin, Field-Effect Transistors (pnjunction gate) McGraw-Hill, New York (1965)Google Scholar
  3. 3.
    C. D. Todd Junction Field-Effect Transistors, Wiley, New York (1968)Google Scholar
  4. 4.
    Microwave field-effect transistors. Special issue, IBM Journal of Research and Development, 14 (March 1970)Google Scholar
  5. 5.
    J. T. Wallmark and J. H. Scott. Switching and storage characteristics of MIS memory transistors. RCA Rev., 30 (1969) 335Google Scholar
  6. 6.
    D. Frohman-Bentchkowski and M. Lenzlinger. Charge transport and storage in metal nitride oxide silicon (MNOS) structures.J. appl. Phys., 40 (1969) 3307CrossRefGoogle Scholar
  7. 7.
    L. G. Carlstedt and C. M. Svensson. MNOS memory transistors in simple memory arrays. IEEE J. Solid State Circuits, SC-7 (1972) 382Google Scholar

Copyright information

© J. T. Wallmark and L. G. Carlstedt 1974

Authors and Affiliations

  • J. T. Wallmark
    • 1
  • L. G. Carlstedt
    • 1
  1. 1.Chalmers University of TechnologyGothenburgSweden

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