Abstract
Ultra large-scale integration (ULSI) technology is one of the most dominant and important technologies of the 21st century. It is the base for the global electronics system industry.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Kilby, J. S.: Invention of the integrated circuit. IEEE Trans. Electron. Devices 23, 648 (1976)
van Zant, P.: Microchip Fabrication: A Practical Guide to Semiconductor Processing. McGraw Hill, New York (2000)
Campbell, S. A.: The Science and Engineering of Microelectronic Fabrication. Oxford University Press, New York (2001)
Murarka, S. P.: Transition metal silicides. Ann. Rev. Mater. Sci. 13, 117 (1983)
Shacham-Diamand, Y.: Barrier layers for Cu ULSI metallization. J. Electronic Mater. 30(4), 336–344 (2001)
Davis, J. A.; Venkatesan, R.; Kaloyeros, A.; Beylansky, M.; Souri, S. J.; Banerjee, K.; Member IEEE, Saraswat, K. C.; and Rahman A.: Interconnect limits on Gigascale Integration (GSI) In the 21st century. Proc. IEEE 89(3), (2001)
Havemann, R. H.; and Hutchby, J. A.: High-performance interconnects: An integration overview. Proc. IEEE 89(5), 586–601, (2001)
Edelstein, M. D.; Sai-Halasz, G. A.; and Mii, Y.-J.: LSl on-chip interconnection performance simulations and measurements. IBM J. Res. & Dev. 39(4), 383–401 (1995)
Andricacos, P. C.; Uzoh, C.; Dukovic, J. O.; Horkans, J.; and Deligianni, H.: Damascene copper electroplating for chip interconnections. IBM J. Res. & Dev. 12(5), 567–574 (1998)
Moffat, T. P.; Wheeler, D.; Edelstein, M. D.; and Josell, D.: Superconformal film growth: Mechanism and quantification. IBM J. Res. & Dev. 49(1), 19–36, (2005)
Ritzdorf, T. L.; Wilson, G. J.; McHugh, P. R.; Woodruff, D. J.; Hanson, K. M.; and Fulton, D.: Design and modeling of equipment used in electrochemical processes for microelectronics. IBM J. Res. & Dev. 49(1), 65–87, (2005)
Ritala, M.; Kalsi, P.; Riihela, D.; Kukli, K.; Leskela, M.; and Jokinen, J.: Controlled growth of TaN, Ta3N5, and TaOxNy thin films by atomic layer deposition. Chem. Mater. 11, 1712 (1999)
Rossnagel, S. M.; Sherman, A.; and Turner, F.: Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers. J. Vac. Sci. and Technol. B18, 2016 (2000)
Pathangey, B. and Solanki, R.: Atomic layer deposition for nanoscale thin films. Vac. Technol. Coating 1, 32 (2000)
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2009 Springer-Verlag New York
About this chapter
Cite this chapter
Shacham-Diamand, Y. (2009). Challenges in ULSI Interconnects - Introduction to the Book. In: Shacham-Diamand, Y., Osaka , T., Datta, M., Ohba, T. (eds) Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications. Springer, New York, NY. https://doi.org/10.1007/978-0-387-95868-2_1
Download citation
DOI: https://doi.org/10.1007/978-0-387-95868-2_1
Published:
Publisher Name: Springer, New York, NY
Print ISBN: 978-0-387-95867-5
Online ISBN: 978-0-387-95868-2
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)