Abstract
In this chapter, three advanced bonding/joining techniques, adhesive bonding, direct bonding, and lead-free soldering, are presented. For each technique, we first review the bonding principles and applications in electronic industries, followed by novel bonding materials and processes.
For adhesive bonding, four popular adhesives, epoxy resins, silicon resins, polymides, and acrylics, are reviewed. Two new adhesives, liquid crystal polymer (LCP) and SU8, are covered too. LCP has the properties of both polymers and liquid crystals. It, thus, can be bonded to silicon, metal, and glass, and used as flexible circuit board. SU 8, an epoxy-based negative type photoresist, has been applied to zero-level-packaging technology for low-cost wafer-level MEMS packaging.
For direct bonding, three popular methods, anodic bonding, diffusion bonding, and surface-activated bonding, are discussed. Anodic bonding process has extensive applications in silicon-glass bonding and glass-glass bonding. Diffusion bonding process forms chemical bonds by inter-diffusion of two different atoms over the bond line. Surface-activated bonding is valuable in bonding objects with large difference in coefficients of thermal expansion because of low process temperature, usually room temperature. A novel Ag-to-Cu direct bonding technique at bonding temperature of 250°C is reported.
In lead-free soldering, fundamental soldering principle is presented. To eliminate the use of fluxes, oxidation-free fluxless soldering technology has been developed. It has been applied to developing numerous soldering processes based on systems such as Sn-Au, Sn-Cu, Sn-Ag, In-Au, In-Cu, and In-Ag. Two fluxless processes are reported. One is bonding between Si/Cr/Au/Sn/Ag and Si/Cr/Au. The other is between Si/Cr/Au/Ag and Cu/Ag/In/Ag. In either process, high bonding quality is achieved without using any flux. Fluxless process has also been demonstrated in flip-chip configuration using Sn-rich solder joints.
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References
Luo S, Wong C (2001) Fundamental study on moisture absorption in epoxy for electronic application. Int Symp Adv Packag Mater, pp 293–298
Teh P, Mariatti M, Beh K et al (2007) The properties of epoxy resin coated silica fillers composites. Mater Lett 61:2156–2158
Chiu C, Lin J, Hsu K et al (2003) Thermally cleavable epoxy resins for electronic and optoelectronic applications. IEEE Electron Packag Technol Conf, pp 425–428
Cognard P, editor (2005) Adhesives and Sealants: Basic concepts and high tech bonding. Elsevier Ltd, Oxford
Watanabe T, Ooba N, Imamura S et al (1998) Polymeric optical waveguide circuits formed using silicone resin. J Lightwave Technol 16:1049–1055
Chida K, Sakaguchi S, Kimura T et al (1982) High speed coating of optical fibres with thermally curable silicone resin using a pressurized die. Electro Lett 18:713–715
Petrie E (2000) Handbook of Adhesives and Sealants. McGraw Hill, New York
Hoontrakul P, Sperling L, Pearson R (2003) Understanding the strength of epoxy-polyimide interfaces for flip-chip packages. IEEE Trans Devices and Mater Reliab 3:159–166
Kinloch A (1986) Structural Adhesives. Elsevier, London
Pizzi A, Mittal K (ed) (2003) Handbook of Adhesive technology. Marcel Dekker, New York
Sashida N, Hirano T, Tokoh A (1989) Photosensitive polyimides with excellent adhesive property for integrated circuit devices. IEEE Electron Compon Conf, pp 167–170
Itatani T, Gorwadkar S, Matsumoto S et al (2000) Positive photosensitive polyimide systhtesized by block-copolymerization for KrF lithography. Proc SPIE, pp 552–558
Kikuchi K, Goto M, Aoyagi M et al (2005) Efficient fabrication process for superconducting integrated circuits using photosensitive polyimide insulation layers. IEEE Trans Appl Supercond 15:94–97
Jain J, Samant S (2005) Novel multilayering technique using folded flexible circuits. IEEE Trans Electron Packag Manuf 28:259–264
Kristiansen H, Liu J (1998) Overview of conductive adhesive interconnection technologies for LCD’s. IEEE Int Symp on Polym Electron Packag, pp 223–232
Kristiansen H, Liu J (1998) Overview of conductive adhesive interconnection technologies for LCDs. IEEE Trans Compon Packag Manuf Technol 21:208–214
Lau J (1995) Flip chip technologies. McGraw-Hill, New York
Kubo K, Touma S, Ross D (1986) Chip-on-glass LCD for automotive application. SAE Spec Publ, pp 115–119
Lawrence L (ed) (1985) Recent advances in liquid crystalline polymers. Elservier Applied Science Publishers, London and Newyork
Thompson D, Tantot O, Papapolymerou J et al (2004) Characterization of liquid crystal polymer (LCP) material and transmission lines on LCP substrates from 30–110 GHz. IEEE Trans Microw Theory Technol 52:1343–1352
Tentzeris M, Laskar J, Lee J-H (2004) 3D Integrated RF and millimeter-wave functions and modules using liquid crstal polymer (LCP) system-on-package technology. IEEE. Trans Adv Packag 27:332–340
Wang G, Thompson D, Papapolymerou J (2004) Low cost RF MEMS switches using LCP substrate. IEEE Trans Adv Packag 3:1441–1444
DeJean G, Bairavasubramanian R, Papapolymerou J et al (2005) Liquid Crystal Polymer (LCP): A new organic material for the development of multilayer dual-frequency/dual polarization flexible antenna arrays. IEEE Antennas and Wireless Propag Lett 4:22–26
Yu L, Tay F, Iliescu C et al (2006) Adhesive bonding with SU8 at wafer level for microfluidic devices. J Phys 114:189–192
Yu L, Iliescu C, Chen B et al (2006) SU8 adhesive bonding using contact imprinting. Int Semicond Conf, pp 189–192
Reuter D, Bertz A, Gessner T (2005) Selective adhesive bonding with SU-8 for zero-level-packaging. Micro- and Nanotechnology: Mater Processes, Packag, and Syst II, pp 163–171
Wallis G and Pomerants D (1969) Field Assisted Glass-Metal Sealing. J Appl Phys 40:3946–3949
Schmidt M (1998) Wafer-to-Wafer Bonding for Microstructure Formation. Proc of the IEEE 86:1575–1585
Wei J, Nai S, Wong C et al (2004) Glass-to-glass anodic bonding process and electrostatic force. Thin Solid Films 462–463:487–491
Lin C, Yang H, Wang W et al (2007) Implementation of three-dimensional SOI-MEMS wafer-level packaging using through-wafer interconnections. J Micromech Microeng 17:1200–1205
Guan1 R, Gan Z, Fulong Z et al (2006) Anodic Bonding Study on Vacuum Micro Sealing Cavity. IEEE Elcetro Packag Technol Conf, pp 1–4
Jin Y, Wang Z, Lim P et al (2003) MEMS vacuum packaging technology and applications. IEEE Electron Packag Technol Conf, pp 301–306
Stefano L, Malecki K, Rossi A et al (2006) Integrated silicon-glass opto-chemical sensors for lab-on-chip applications. Sens and Actuators B 114: 625–630
Briand D, Weber P, Rooij N (2004) Silicon liquid flow sensor encapsulation using metal to glass anodic bonding. IEEE Int Micro Electro Mech Syst Conf, pp 649–652
Akselsen O (1992) Review Diffusion Bonding of Ceramics. J Mater Sci 27: 569–579
Qin C-D and Derby B (1992) Diffusion bonding of nickel and zirconia: Mechanical properties and interfacial microstructures. J Mater Res 7: 1480–1488
Chen S, Ke F, Zhou M, and Bai Y (2007) Atomistic investigation of the effects of temperature and surface roughness on diffusion bonding between Cu and Al. Acta Mater 55:3169–3175
Li H, Zheng Y, Akin D et al (2005) Characterization and modeling of microfluidic dielectrophoresis filter for biological species. J Microlelectromech Syst 14:103–112
Bartle P, Houldcroft P, Needham J et al (1979) Diffusion bonding as a production process. The Welding Institute, UK
Tummala R, Rymaszewski E, Klopfenstein A (1997) Microelectronics packaging handbook. Chapman & Hall, USA
Bolcar V (1968) Thermocompression bonding of external package leads on integrated circuit substrates. IEEE Trans Electron Devices 15:651–655
Wang Z, Tan Y, Schreiber C (2000) Development of chip-on-dot flip chip technique utilizing gold dot™ flexible circuitry. IEEE Electro Compon Technol Conf, pp 1470–1474
Takagi H, Kikuchi K, Maeda R et al (1996) Surface activated bonding of silicon wafers at room temperature. Appl Phys Lett 68:2222–2224
Suga T, Takahashi Y, Takagi H et al (1992) Structure of Al-Al and Al-Si3Ni4 interfaces bonded at room temperature by means of the surface activation method. Acta Metall Mater 40:S133–S137
Takagi H, Maeda R (2006) Direct bonding of two crystal substrates at room temperature by Ar-beam surface activation. J Cryst Growth 292:429–432
Takagi H, Maeda R, Hosoda N (1999) Room-twmperature bonding of lithium niobate and silicon wafers by argon-beam surface activation. Appl Phys Lett 74:2387–2389
Davoine C, Fendler M, Louis C et al (2006) Impact of pitch reduction over residual strain of flip chip solder bump after refow. IEEE Int. Conf. on Therm Mech and Multiphysics Simul and Exp in Micro-Electron and Micro-Syst, pp 1–5
Peng C-T, Liu C-M, Lin J-C et al (2004) Reliability analysis an ddesign for the fine-pitch flip chip BGA packgeing. IEEE Trans. Compon Packag Technol 24:684–693
Xiao G, Chan P, Teng A et al (2001) Reliability study and failure analysis of fine pitch solder bumped flip chip on low-cost printed circuit board substrate. IEEE Electon Compon Technol Conf, pp 598–605
Xu Z, Suga T. (2005) Surface activated bonding –high density packaging solution for advanced microelectronic system. IEEE Int Electron Packag Technol Conf, pp 398–403
Shigetou A, Itoh T, Matsuo M et al (2006) Bumpless interconnect through ultrafine Cu electrodes by means of surface-activated bonding (SAB) method. IEEE Trans Adv Packag 29:218–226
Wang Q, Hosoda N, Itoh T et al (2003) Reliability of Au bump-Cu direct interconnections fabricated by means of surface activated bonding method. Microelectron Reliab 43:751–756
Wang P, Kim J, Lee C (2007) A Novel Ag-Cu Lamination Process. IEEE Adv Packag Mater Symp, pp 200–202
Yamada Y, Takaku Y, Yagi Y et al (2006) Pb-free high temperature solders for power device packaging. Microelectron and Reliab 46:1932–1937
Lee C, Wang C, Matijasevic G (1991) A new bonding technology using gold and tin multilayer composite structures. IEEE Trans Compon Hybrids and Manuf Tech 14:407–412
Bernier (1998) The nature of white residue on printed circuit assemblies. Kester Solder, Des Plaines, IL
Koopman N, Bobbio S, Nangalia S et al (1993) Fluxless soldering in air and nitrogen. Proc IEEE Electron Compon and Technol Conf, pp 595–605
Beranek et al (1997) Fluxless, no clean assembly of optoelectronic devices with PADS. Proc IEEE Electron Compon and Technol Conf, pp 755–762
Hong S, Kang C, Jung J (2004) Plama reflow bumping of Sn3.5%Ag solder for flux-free flip chip package application. IEEE Trans Adv Packag 27:90–96
Park C, Hong S, Jung J et al (2001) A study on the fluxless soldering of Si wafer/glass substrate using Sn3.5Ag and Sn37 Pb solder. Mater Trans 42:820–824
Lin W, Lee Y (1999) Study of fluxless soldering using formic acid vapor. IEEE Trans Adv Packag 22:592–601
Matsuki H, Matsui H, Watanabe E (2001) Fluxless bump reflow using carboxylic acid. Int Symp on Adv Packag Mater, pp 135–139
Dong C, Patrick R, Karwacki E (2007) Electron attachment: a new approach to H2 fluxless solder reflow for wafer bumping. IEEE Trans Adv Packag 30:485–490
Matijavesic G, Lee C (1989) Void-free Au-Sn eutectic bonding of GaAs dice and its characterization using scanning acoustic microscopy. J Electron Mater 18:327–337
Zakel E, Gwiasda J, Kloesser J et al (1994) Fluxless flip chip assembly on rigid and flexible polymer substrates using the Au-Sn metallurgy. Proc. IEEE/CMPT Electron Manuf Tech Symp, pp 177–184
Kallmayer C, Opperman H, Engelmann G et al (1996) Self-aligning flip-chip assembly using eutectic gold/tin solder in different atmospheres. Proc. IEEE/CMPT Electron Manuf Tech Symp, pp 18–25
Okamoto H, Massalski T (eds) (1987) Phase Diagram of Binary Gold Alloys, ASM International, Metals Park, OH
Ishikawa M, Sasaki H, Ogawa S et al (2005) Application of gold-tin solder paste for fine parts and devices. Proc IEEE Electron Compon Technol Conf, pp 701–709
Matijasevic G, Lee C, Wang C (1993) Gold-tin alloy phase diagram and properties related to its use as a bond medium. Thin Solid Films 223:276–287
Lee C, Wang C, Matijasevic G (1993) Gold-indium alloy bonding below the eutectic temperature. IEEE Trans Compon Hybrids and Manuf Tech 16:311–316
Matijasevic G, Chen Y, Lee C (1994) Copper-tin multilayer composite solder for fluxless processing. Int J Microcircuits and Electron Packag 17:108–117
Lee C, Chen Y (1995) Indium-copper multilayer composite solder for fluxless Bonding. Mater Res Soc Spring Meet, MRS Symp Proc Electron Packag Mater Sci VIII 390:225–230
Chen Y, So W, Lee C (1997) A fluxless bonding technology using indium-silver multilayer composites. IEEE Trans Compon Packag and Manuf Technol 20:46–51
So W, Lee C (2000) A fluxless process of fabricating In-Au joints on copper substrates. IEEE Trans Compon and Packag Technol 23:377–382
Lee C, Chuang R (2003) Fluxless non-eutectic joints fabricated using gold-tin multilayer composite. IEEE Trans Compon and Packag Technol 26:416–422
Chuang R, Kim D, Park J et al (2004) A fluxless process of producing tin-rich gold-tin joints in air. IEEE Trans Compon and Packag Technol 27:177–181
Kim J, Lee C (2007) Fluxless Sn-Ag bonding in vacuum using electroplated layers. Mater Sci and Eng A 448:345–350
Kim J, Wang P, Lee C (2007) Fluxless bonding of Si Chips to Ag-copper using Electroplated Indium and Silver Structures. Proc IEEE Adv Packag Mater Symp, pp 194–199
Kim J, Kim D, Lee C (2006) Fluxless flip-chip solder joint fabrication using electroplated Sn-Rich Sn-Au structures. IEEE Trans Adv Packag 29:473–482
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Lee, C.C., Wang, P.J., Kim, J.S. (2009). Advanced Bonding/Joining Techniques. In: Lu, D., Wong, C. (eds) Materials for Advanced Packaging. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-78219-5_2
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DOI: https://doi.org/10.1007/978-0-387-78219-5_2
Publisher Name: Springer, Boston, MA
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