Summary
Magnetic-field dependences of THz-radiation from InAs and InSb were investigated. For InAs irradiated with 0.8 µm laser, it is found that THz-radiation power exhibits oscillation-like behavior with increasing magnetic field, and reaches maximum at around 3 T. Furthermore, significant enhancement of THz-radiation power is successfully achieved for InSb by using a 1.56 µm exciation and an external magnetic field of 1.2 T.
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Takahashi, H., Quema, A., Goto, M., Ono, S., Sarukura, N. (2004). Magnetic-Field Induced Enhancement of THz-Radaiation from InAs Irradiated with 0.8 µm Laser up to 27 T and InSb Irradiated with 1.56 µm Laser up to 5 T. In: Krausz, F., Korn, G., Corkum, P., Walmsley, I.A. (eds) Ultrafast Optics IV. Springer Series in OPTICAL SCIENCES, vol 95. Springer, New York, NY. https://doi.org/10.1007/978-0-387-34756-1_53
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DOI: https://doi.org/10.1007/978-0-387-34756-1_53
Publisher Name: Springer, New York, NY
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