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II–VI Narrow-Bandgap Semiconductors for Optoelectronics

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Springer Handbook of Electronic and Photonic Materials

Part of the book series: Springer Handbooks ((SHB))

Abstract

The field of narrow-gap II–VI materials is dominated by the compound semiconductor mercury cadmium telluride, (Hg1–x Cd x Te or MCT), which supports a large industry in infrared detectors, cameras and infrared systems. It is probably true to say that HgCdTe is the third most studied semiconductor after silicon and gallium arsenide. Hg1–x Cd x Te is the material most widely used in high-performance infrared detectors at present. By changing the composition x the spectral response of the detector can be made to cover the range from 1 μm to beyond 17 μm. The advantages of this system arise from a number of features, notably: close lattice matching, high optical absorption coefficient, low carrier generation rate, high electron mobility and readily available doping techniques. These advantages mean that very sensitive infrared detectors can be produced at relatively high operating temperatures. Hg1–x Cd x Te multilayers can be readily grown in vapor-phase epitaxial processes. This provides the device engineer with complex doping and composition profiles that can be used to further enhance the electro-optic performance, leading to low-cost, large-area detectors in the future. The main purpose of this chapter is to describe the applications, device physics and technology of II–VI narrow-bandgap devices, focusing on HgCdTe but also including Hg1–x Mn x Te and Hg1–x Zn x Te. It concludes with a review of the research and development programs into third-generation infrared detector technology (so-called GEN III detectors) being performed in centers around the world.

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Abbreviations

CCD:

charge-coupled device

CMOS:

complementary metal-oxide-semiconductor

DLHJ:

double-layer heterojunction

EPD:

etch pit density

FPA:

focal plane arrays

IMP:

interdiffused multilayer process

IR:

infrared

LED:

light-emitting diodes

LPE:

liquid phase epitaxy

MBE:

molecular beam epitaxy

MOS:

metal/oxide/semiconductor

MOSFET:

metal/oxide/semiconductor field effect transistor

MOVPE:

metalorganic vapor phase epitaxy

MQW:

multiple quantum well

MTF:

modulation transfer function

NMOS:

n-type-channel metal–oxide–semiconductor

PC:

photoconductive

PV:

photovoltaic

SIMS:

secondary ion mass spectrometry

THM:

traveling heater method

VPE:

vapor phase epitaxy

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  1. SELEX Sensors and Airborne Systems Infrared Ltd., SO15 OEG, Southampton, Hampshire, UK

    Ian Baker Dr.

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  1. Ian Baker Dr.
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  1. Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, S7N 5A9, Saskatoon, SK, Canada

    Safa Kasap Prof.

  2. Materials Team Leader, SELEX Sensors and Airborne Systems Infrared Ltd., Millbrook Industrial Estate, PO Box 217, SO15 0EG, Southampton, Hampshire, UK

    Peter Capper Dr.

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Baker, I. (2006). II–VI Narrow-Bandgap Semiconductors for Optoelectronics. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-29185-7_36

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