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Epitaxial Crystal Growth: Methods and Materials

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Springer Handbook of Electronic and Photonic Materials

Part of the book series: Springer Handbooks ((SHB))

Abstract

The epitaxial growth of thin films of material for a wide range of applications in electronics and optoelectronics is a critical activity in many industries. The original growth technique used, in most instances, was liquid-phase epitaxy (LPE), as this was the simplest and often the cheapest route to producing device-quality layers. These days, while some production processes are still based on LPE, most research into and (increasingly) much of the production of electronic and optoelectronic devices now centers on metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). These techniques are more versatile than LPE (although the equipment is more expensive), and they can readily produce multilayer structures with atomic-layer control, which has become more and more important in the type of nanoscale engineering used to produce device structures in as-grown multilayers. This chapter covers these three basic techniques, including some of their more common variants, and outlines the relative advantages and disadvantages of each. Some examples of growth in various important systems are also outlined for each of the three techniques.

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Abbreviations

2DEG:

two-dimensional electron gas

AFM:

atomic force microscopy

ALD:

atomic-layer deposition

ALE:

atomic-layer epitaxy

CBE:

chemical beam epitaxy

CFLPE:

container-free liquid phase epitaxy

CVD:

chemical vapor deposition

DIPTe:

diisopropyltellurium

DLHJ:

double-layer heterojunction

DMCd:

dimethyl cadmium

DMZn:

dimethylzinc

DTBSe:

ditertiarybutylselenide

ELO:

epitaxial lateral overgrowth

ELOG:

epitaxial layer overgrowth

FET:

field effect transistor

FPA:

focal plane arrays

GSMBE:

gas-source molecular beam epitaxy

HBT:

hetero-junction bipolar transistor

HEMT:

high electron mobility transistor

IC:

integrated circuit

IMP:

interdiffused multilayer process

IR:

infrared

LED:

light-emitting diodes

LPE:

liquid phase epitaxy

MBE:

molecular beam epitaxy

MCT:

mercury cadmium telluride

MFC:

mass flow controllers

ML:

monolayer

MOCVD:

metal-organic chemical vapor deposition

MODFET:

modulation-doped field effect transistor

MOMBE:

metalorganic molecular beam epitaxy

MOVPE:

metalorganic vapor phase epitaxy

MQW:

multiple quantum well

MWIR:

medium-wavelength infrared

PC:

photoconductive

PL:

photoluminescence

PV:

photovoltaic

QD:

quantum dot

QW:

quantum well

RF:

radio frequency

RHEED:

reflection high-energy electron diffraction

SVP:

saturated vapor pressure

TBA:

tertiarybutylarsine

TBP:

tertiarybutylphosphine

TEGa:

triethylgallium

TEN:

triethylamine

TMSb:

trimethylantimony

TPV:

thermophotovoltaic

UV:

ultraviolet

VB:

valence band

VCSEL:

vertical-cavity surface-emitting laser

VFE:

vector flow epitaxy

VPE:

vapor phase epitaxy

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Authors and Affiliations

  1. Materials Team Leader, SELEX Sensors and Airborne Systems Infrared Ltd., Millbrook Industrial Estate, PO Box 217, SO15 0EG, Southampton, Hampshire, UK

    Peter Capper Dr.

  2. Department of Chemistry, University of Wales, Bangor, LL57 2UW, Gwynedd, UK

    Stuart Irvine Prof.

  3. Functional Materials Research Centre, Department of Engineering, University of Liverpool, Brownlow Hill, L69 3BX, Liverpool, UK

    Tim Joyce Ph.D.

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  1. Peter Capper Dr.
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  1. Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, S7N 5A9, Saskatoon, SK, Canada

    Safa Kasap Prof.

  2. Materials Team Leader, SELEX Sensors and Airborne Systems Infrared Ltd., Millbrook Industrial Estate, PO Box 217, SO15 0EG, Southampton, Hampshire, UK

    Peter Capper Dr.

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Capper, P., Irvine, S., Joyce, T. (2006). Epitaxial Crystal Growth: Methods and Materials. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-29185-7_14

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