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Wide Band-Gap Semiconductor Nanowires Synthesized by Vapor Phase Growth

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Nanowires and Nanobelts

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Abstract

With the rapid development of the contemporary sciences and technologies into nanoscale regime, one needs to synthesize nanostructured materials, to addresses their peculiar physical and chemical properties related to the lower dimensionality, and what is more important is to explore their possible applications. Among those nanostructures, functional nanowire materials have stimulated intensive research interests from fundamental research to application community. A variety of one-dimensional nanostructured materials, such as silicon, germanium [1–6], GaAs, InAs [7, 8], gallium nitride [9], have been prepared. Fig. 1 shows an example that very pure silicon nanowires can be synthesized via simple physical evaporation [2].

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Authors and Affiliations

  1. School of Physics, Electron Microscopy Laboratory, and State Key Laboratory for Mesoscopic Physics, Peking University, Beijing, 100871, P. R. China

    D. P. Yu

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  1. Georgia Institute of Technology, USA

    Zhong Lin Wang

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Yu, D.P. (2003). Wide Band-Gap Semiconductor Nanowires Synthesized by Vapor Phase Growth. In: Wang, Z.L. (eds) Nanowires and Nanobelts. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-28745-4_11

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  • DOI: https://doi.org/10.1007/978-0-387-28745-4_11

  • Publisher Name: Springer, Boston, MA

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