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Scanning Probe Microscopy pp 880–905Cite as

UHV-STM Nanofabrication on Silicon

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Abstract

The ultrahigh vacuum scanning tunneling microscope (UHV-STM) offers intriguing opportunities to explore the integration of novel nanotechnologies with existing semiconductor platforms. This chapter describes the development of the atomic-resolution hydrogen resist technique and its application to the templated self-assembly of molecular systems on silicon. The observation of a giant isotope effect in STM hydrogen desorption experiments has led to the use of deuterium to retard hot-carrier degradation in CMOS transistor technology. We have also explored the integration of carbon nanotubes with silicon and the III-V compound semiconductors. This has been facilitated by the development of the dry contact transfer (DCT) technique that enables atomically clean nanotube/substrate systems to be achieved, even for highly reactive surfaces like atomically clean silicon.

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Authors and Affiliations

  1. Beckman Institute, 405 N. Mathews, Urbana, IL, 61801

    Peter M. Albrecht, Laura B. Ruppalt & Prof. Joseph W. Lyding

Authors
  1. Peter M. Albrecht
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  2. Laura B. Ruppalt
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  3. Prof. Joseph W. Lyding
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Editors and Affiliations

  1. Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA

    Sergei Kalinin

  2. Dept. Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA

    Alexei Gruverman

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Albrecht, P.M., Ruppalt, L.B., Lyding, J.W. (2007). UHV-STM Nanofabrication on Silicon. In: Kalinin, S., Gruverman, A. (eds) Scanning Probe Microscopy. Springer, New York, NY. https://doi.org/10.1007/978-0-387-28668-6_33

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