Abstract
Scanning probe microscopes (SPM) have been envisaged and applied from the beginning as tools both to image surfaces with unprecedented resolution and to interact with surfaces like an extension of the operator’s fingertips. The prototype for electrical SPM certainly was the scanning tunneling microscope (STM). For the purpose of this chapter we do not consider mechanical nano-machining, i.e., scratching with the tunneling-tip, as a form of electrical SPM, despite the mechanical contact between tip and specimen surface being induced by low tunneling voltages and high current set-points. Applying a voltage of a few 10 V to the tip, McCord and Pease [1] succeeded in writing lines of contamination on bare silicon that protected the substrate during the subsequent etch. Line widths below 50 nm were achieved. Contamination lines were already observed before on metallic glass [2]. Later, Okawa and Aono [3] were able to induce the formation of polymeric nanowires on a graphite substrate covered by a monolayer of a diacetylene compound by applying voltage pulses to the STM tip. Positioning single xenon atoms on a nickel (110) surface at cryogenic temperatures, as demonstrated by Eigler [4], or removing a single atom from a MoS2 crystal to create, according to the Guinness World Records book, the smallest hole in the world, as shown by Heckl, mark the ultimate forms of nanofabrication possible with the STM. So far, however, most application- or device-directed nanofabrication by SPM takes place on a scale of molecules to several dozen nanometers.
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References
M. A. McCord, R. F. W. Pease, Surf. Sci. 181(1–2), 278–284 (1987).
M. Ringger, H. R. Hidber, R. Schlögl, P. Oelhafen, H. J. Güntherodt, Appl. Phys. Lett. 46(9), 832–834 (1985).
Y. Okawa, M. Aono, Nature 409, 683–884 (2001).
D. M. Eigler, E. K. Schweizer, Nature 344 (6266), 524–526 (1990).
D. Wouters, U. S. Schubert, Angew. Chem. Int. Ed. 43, 2480–2495 (2004).
S. Lüscher, A. Fuhrer, R. Held, T. Heinzel, K. Ensslin, M. Bichler, W. Wegscheider, Microelectron. J. 33(4), 319–321 (2002).
T. Ono, S. Yoshida, M. Esashi, Nanotechnology 14(9), 1051–1054 (2003).
H. J. Mamin, B. D. Terris, L. S. Fan, S. Hoen, R. C. Barrett, D. Rugar; IBM J. Res. Devel. 39(6), 681–699 (1995).
W. M. D. Wright, D. G. Chetwynd, Nanotechnology 9, 133–142 (1998).
G. Schitter, F. Allgöwer, A. Stemmer, Nanotechnology 15(1), 108–114 (2004).
P. Vettiger, G. Cross, M. Despont, U. Drechsler, U. Dürig, B. Gotsmann, W. Häberle, M. A. Lantz, H. E. Rothuizen, R. Stutz, G. K. Binnig, IEEE Trans. Nanotechnol. 1(1), 39–55 (2002).
H. O. Jacobs, G. M. Whitesides, Science 291(5509), 1763 (2001).
D. M. Kolb, R. Ullmann, T. Will, Science 275, 1097 (1997).
J. R. LaGraff, A. A. Gewirth, J. Phys. Chem. 98, 11246 (1994).
O. E. Hüsser, D. H. Craston. A. J. Bard, J. Electrochem. Soc. 136(11), 3222 (1989).
G. S. Hsiao, R. M. Penner, J. Kingsley, Appl. Phys. Lett. 64(11), 1350 (1994).
R. T. Poetzschke, G. Staikov, W. J. Lorenz, W. Wiesbeck, J. Electrochem. Soc. 146(1), 141 (1999).
F. Forouzan, A. J. Bard, J. Phys. Chem. B 101, 10876 (1997).
V. Kirchner, X. Xia, R. Schuster, Acc. Chem. Res. 34, 34 (2001).
X. Xiao, M. Nielinger, H. Baltruschat, Electrochim. Acta 48, 3093 (2003).
R. M. Nyffenegger, R. M. Penner, J. Phys. Chem. 100, 17041 (1996).
D. R. Yaniv, L. D. McCormick, Nanotechnology 3, 44 (1992).
R. Yang, D. F. Evans, W. A. Hendrickson, Langmuir 11, 211 (1995).
S.-Y. Jang, M. Marquez, G. A. Sotzing, J. Am. Chem. Soc. 126, 9476 (2004).
M. A. McCord, D. D. Awschalom, Appl. Phys. Lett. 57(20), 2153 (1990).
R. K. Workman, C. A. Peterson, D. Sarid, Surface Science 423, L277 (1999).
W. Li, J. A. Virtanen, R. M. Penner, Appl. Phys. Lett. 60(10), 1181 (1992).
M. Lee, R. O’Hayre, F. B. Prinz, T. M. Gür, Appl. Phys. Lett. 85(16), 3552 (2004).
A. J. Bard, M. V. Mirkin, Scanning Electrochemical Microscopy, Marcel Dekker, New York (2001).
K. Borgwarth, J. Heinze, J. Electrochem. Soc. 146(9), 3285 (1999).
E. Amman, D. Mandler, J. Electrochem. Soc. 148(8), C533 (2001).
C. Marck, K. Borgwarth, J. Heinze, Chem. Mater. 13, 747 (2001).
J. Zhou, D. O. Wipf, J. Electrochem. Soc. 144(4), 1202 (1997).
K. Borgwarth, C. Ricken, D. G. Ebling, J. Heinze, Ber. Bunsenges. Phys. Chem. 99(11), 1421 (1995).
O. de Abril, D. Mandler, P.R. Unwin, Electrochem. Solid-State Lett. 7(6), C71 (2004).
I. Turyan, U. O. Krasovec, B. Orel, T. Saraidorov, R. Reisfeld, D. Mandler, Adv. Mater. 12(5), 330 (2000).
Y. Li, B. W. Maynor, J. Liu, J. Am. Chem. Soc. 123, 2105 (2001).
B. W. Maynor, S. F. Filocamo, M. W. Grinstaff, J. Liu, J. Am. Chem. Soc. 124, 522 (2002).
G. Agarwal, R. R. Naik, M. O. Stone, J. Am. Chem. Soc. 125, 7408 (2003).
B. W. Maynor, J. Li, C. Lu, J. Liu, J. Am. Chem. Soc. 126, 6409 (2004).
L. A. Nagahara, T. Thundat, S. M. Lindsay, Appl. Phys. Lett. 57(3), 270 (1990).
Z.-X. Xie, D. M. Kolb, J. Electroan. Chem. 481, 177 (2000).
Q. Chi, J. Zhang, E. P. Friis, J. E. T. Andersen, J. Ulstrup, Surf. Sci. 463, L641 (2000).
L. Roue, L. Chen, D. Guay, Langmuir 12, 5818 (1996).
J. Ufheil, F. M. Boldt, M. Börsch, K. Borgwarth, J. Heinze, Bioelectrochem. 52, 103 (2000).
L. Chen, D. Guay, J. Electrochem. Soc. 141(4), L43 (1994).
C. Lebreton, Z. Z. Wang, Appl. Phys. A. 66, S777 (1998).
M. Meltzer, D. Mandler, J. Chem. Faraday Trans. 91(6), 1019 (1995).
Z.-X. Xie, X. W. Cai, J Tang, Y. A. Chen, B. E. Mao, Chem. Phys. Lett. 322, 219 (2000).
D. Mandler, A. J. Bard, Langmuir 6, 1489 (1990).
R. M. Penner, M. J. Heben, N. S. Lewis, C. F. Quate, Appl. Phys. Lett. 58(13), 1389 (1991).
A. Majumdar, P. I. Oden, J. P. Carrejo, L. A. Nagahara, J. J. Graham, J. Alexander, Appl. Phys. Lett. 61(19), 2293 (1992).
S. W. Park, H. T. Soh, C. F. Quate, S.-I. Park, Appl. Phys. Lett. 67(16), 2415 (1995).
K. Ohtsuka, K. Yonei, Jpn. J. Appl. Phys. 41, part2, 6B, L667 (2002).
S. Juhl, D. Phillips, R. A. Vaia, S. F. Lyuksyutov, P. B. Paramonov, Appl. Phys. Lett. 85(17), 3836 (2004).
R.-W. Li, T. Kanki, H.-A. Tohyama, M. Hirooka, H. Tanaka, T. Kawai, Nanotechnology 16, 28 (2005).
O. Schneegans, A. Moradpour, L. Boyer, D. Balutaud, J. Phys. Chem. B 108, 9882 (2004).
C. Schönenberger, Phys. Rev. B 45(7), 3861 (1992).
P. Mesquida, A. Stemmer, Microelectron. Eng. 61–62, 671 (2002).
N. Naujoks, A. Stemmer, Microelectron. Eng. 67–68, 736 (2003).
N. Naujoks, A. Stemmer, Colloids Surf. A 249, 69 (2004).
P. Mesquida, A. Stemmer, Adv. Mater. 13(18), 1395 (2001).
N. Naujoks, A. Stemmer, Microelectron. Eng. 78–79, 331 (2005).
H. Fudouzi, M. Kobayashi, M. Egashira, N. Shinya, Adv. Powder Technol. 8(3), 251 (1997).
H. Fudouzi, M. Kobayashi, N. Shinya, Langmuir 18(20), 7649 (2002).
H. O. Jacobs, S. A. Campbell, M. G. Steward, Adv. Mater. 14(21), 1553 (2002).
M. Kang, H. Kim, B. Han, J. Suh, J. Park, M. Choi, Microelectron. Eng. 71, 229 (2004).
T. J. Krinke, H. Fissan, K. Deppert, M. H. Magnusson, L. Samuelson, Appl. Phys. Lett. 78(23), 3708 (2001).
G.M. Sessler, in Electrets. Topics in Applied Physics, edited by G.M. Sessler (Springer, Berlin, 1987), Vol. 33 (2nd edition), Chap. 1,2.
M. Nonnenmacher, M. P. O’Boyle, H. K. Wickramasinghe, Appl. Phys. Lett. 58(25), 2921 (1991).
M. Fujihira, Ann. Rev. Mater. Sci. 29, 353 (1999).
H. O. Jacobs, P. Leuchtmann, O. J. Homan, A. Stemmer, J. Appl. Phys. 84(3), 1168 (1998).
S. P. Wilks, T. G. G. Maffeis, G. T. Owen, K. S. Teng, M.W. Penny, H. Ferkel, J. Vac. Sci. Technol. B 22(4), 1995 (2004).
J. E. Stern, B. D. Terris, H. J. Mamin, D. Rugar, Appl. Phys. Lett. 53(26), 2717 (1988).
B. D. Terris, J. E. Stern, D. Rugar, H. J. Mamin, J. Vac. Sci. Technol. B 8(1), 374 (1990).
N. Umeda, K. Makino, T. Takahashi, A. Takayanagi, J. Vac. Sci. Technol. B 12(3), 1600 (1994).
P. Mesquida, H. F. Knapp, A. Stemmer, Surf. Interface Anal. 33, 159 (2002).
P. Mesquida, Ph.D. thesis, ETH Zurich, 2002, (http://e-collection.ethbib.ethz.ch/show?type=diss↛=14854).
W. Olthuis, P. Bergveld, IEEE Trans. El. Insul. 27(4), 691 (1992).
S. Morita, Y. Sugawara, Y. Fukano, Jpn. J. Appl. Phys. 32 (Pt.1, No.6B), 2983 (1993).
S. Morita, Y. Sugawara, Y. Fukano, T. Uchihashi, T. Okusako, A. Chayahara, Y. Yamanishi, T. Oasa, Jpn. J. Appl. Phys. 32 (Pt.2, No.12B), L1852 (1993).
Y. Fukano, T. Uchihashi, T. Okusako, A. Chayahara, Y. Sugawara, Y. Yamanishi, T. Oasa, S. Morita, Jpn. J. Appl. Phys. 33 (Pt.1, No.12A), 6739 (1994).
Y. Sugawara, Y. Fukano, T. Uchihashi, T. Okusako, S. Morita, Y. Yamanishi, T. Oasa, T. Okada, J. Vac. Sci. Technol. B 12(3), 1627 (1994).
Y. Fukano, Y. Sugawara, T. Uchihashi, T. Okusako, S. Morita, Y. Yamanishi, T. Oasa, Jpn. J. Appl. Phys. 35 (Pt.1, No.4A), 2394 (1996).
T. Uchihashi, T. Okusako, Y. Sugawara, Y. Yamanishi, T. Oasa, S. Morita, Jpn. J. Appl. Phys. 33 (Pt.2, No.8A), L1128 (1994).
E. T. Enikov, A. Palaria, Nanotechnology 15, 1211 (2004).
T. Uchihashi, A. Nakano, T. Ida, Y. Andoh, R. Kaneko, Y. Sugawara, S. Morita, Jpn. J. Appl. Phys. 36 (Pt.1, No.6A), 3755 (1997).
H. Amjadi, C.-P. Franz, J. Electrostatics 50, 265 (2001).
R. C. Barrett, C. F. Quate, J. Appl. Phys. 70(5), 2725 (1991).
B. D. Terris, R. C. Barrett, IEEE Trans. Electron Devices 42(5), 944 (1995).
I. Fujiwara, S. Kojima, J. Seto, Jpn. J. Appl. Phys. 35 (Pt.1, No.5A), 2764 (1996).
S. D. Tzeng, C. L. Wu, Y. C. You, T. T. Chen, S. Gwo, H. Tokumoto, Appl. Phys. Lett. 81(26), 5042 (2002).
T. Uchihashi, T. Okusako, T. Tsuyuguchi, Y. Sugawara, M. Igarashi, R. Kaneko, S. Morita, Jpn. J. Appl. Phys. 33 (Pt.1, No.9B), 5573 (1994).
J. T. Jones, P. M. Bridger, O. J. Marsh, T. C. McGill, Appl. Phys. Lett. 75(9), 1326 (1999).
J. Lambert, M. Saint-Jean, C. Guthmann, J. Appl. Phys. 96(12), 7361 (2004).
N. Gemma, H. Hieda, K. Tanaka, S. Egusa, Jpn. J. Appl. Phys. 34 (Pt.2, No.7A), L859 (1995).
E. A. Boer, M. L. Brongersma, H. A. Atwater, R. C. Flagan, L. D. Bell, Appl. Phys. Lett. 79(6), 791 (2001).
E. A. Boer, L. D. Bell, M. L. Brongersma, H. A. Atwater, J. Appl. Phys. 90(6), 2764 (2001).
T. G. G. Maffeis, G. T. Owen, M. Penny, H. S. Ferkel, S. P. Wilks, Appl. Surf. Sci. 234, 2 (2004).
J. Mort, The anatomy of Xerography: Its Invention and Evolution (Mc-Farland, London, 1989).
T. B. Jones, Electromechanics of particles (Cambridge Univ. Press, New York, 1995).
I. D. Morrison, S. Ross, Colloidal Dispersions: Suspensions, Emulsions, and Foams (John Wiley & Sons Inc, Weinheim, 2002).
A. Coehn, U. Raydt, Ann. Phys. 30 (4. Folge) 777 (1909).
K. G. Marinova, R. G. Alargova, N. D. Denkov, O. D. Velev, D. N. Petsev, I. B. Ivanov, R. P. Borwsankar, Langmuir 12, 2045 (1996).
J. Feder, J. Appl. Phys. 47(5), 1741 (1976).
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Naujoks, N., Mesquida, P., Stemmer, A. (2007). Electrical SPM-Based Nanofabrication Techniques. In: Kalinin, S., Gruverman, A. (eds) Scanning Probe Microscopy. Springer, New York, NY. https://doi.org/10.1007/978-0-387-28668-6_31
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