Edge Diffusion in Phase-Field Models for Epitaxial Growth

  • Andreas Rätz
  • Axel Voigt
Conference paper
Part of the ISNM International Series of Numerical Mathematics book series (ISNM, volume 149)


A phase-field model is proposed to describe step-flow in epitaxial growth. In this model the motion of steps or island boundaries of discrete atomic layers on an epitaxial growing film is determined by the time evolution of an introduced phase-field variable. We use formally matched asymptotic expansion to determine the asymptotic limit of vanishing interfacial thickness and show the reduction to classical sharp interface models of Burton-Cabrera-Frank type with edge diffusion.


step-flow model phase-field approximation edge diffusion 


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Copyright information

© Birkhäuser Verlag Basel/Switzerland 2005

Authors and Affiliations

  • Andreas Rätz
    • Axel Voigt
      • 1
    1. 1.Crystal Growth groupresearch center caesarBonnGermany

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