Simulation of Ostwald Ripening in Homoepitaxy

  • Frank Haußer
  • Axel Voigt
Conference paper
Part of the ISNM International Series of Numerical Mathematics book series (ISNM, volume 149)


Ostwald ripening in homoepitaxy in the submonolayer regime is studied by means of numerical simulations. The simulations indicate, that the coarsening kinetics of the average island radius is described by a t1/a power law, where 2 ≤ a ≤ 3. Here a approaches 2, if the ripening is purely kinetics limited (low attachment rate at the island boundaries) and increases with increasing attachment rate — taking the value a = 3 if the ripening is purely diffusion limited (infinite attachment rate at the island boundaries). For the two limiting cases the classical LSW theory is reviewed and compared with the numerical simulations. Besides the scaling law we also investigate the asymptotic scaled island size distribution function and analyse the influence of anisotropic edge energies and the effect of edge diffusion.


Ostwald ripening numerical simulation 


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Copyright information

© Birkhäuser Verlag Basel/Switzerland 2005

Authors and Affiliations

  • Frank Haußer
    • Axel Voigt
      • 1
    1. 1.Crystal Growth groupBonnGermany

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