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Electrical Resistivity of Thin Metal Films pp 35–52Cite as

The Effect of Annealing on the Electrical Resistivity of Thin Gold Films

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Part of the Springer Tracts in Modern Physics book series (STMP,volume 223)

Abstract

The structure properties of thin gold films deposited on glass substrates are in principle similar to the silver films described in the last chapter. The main difference, however, is the fact that the crystal growth as well as the island formation occur at higher temperatures for gold films. First, we will concentrate on gold films deposited at room temperature and then annealed for 1 h at higher temperatures, all other preparation parameters have been kept as comparable as possible to the case of silver.

Keywords

  • Electrical Resistivity
  • Glass Substrate
  • Silicon Substrate
  • Phase Transition Temperature
  • Gold Surface

These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Authors and Affiliations

  1. Institut für Physikalische und Theoretische Chemie, Universität Erlangen-Nürnberg, Egerlandstr. 4, 91058, Erlangen, Germany

    Peter Wißmann Professor

  2. Hochschule Niederrhein, FB Chemie, Adlerstr. 32, 47798, Krefeld, Germany

    Hans-Ulrich Finzel Professor

Authors
  1. Peter Wißmann Professor
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  2. Hans-Ulrich Finzel Professor
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Wißmann, P., Finzel, HU. (2007). The Effect of Annealing on the Electrical Resistivity of Thin Gold Films. In: Electrical Resistivity of Thin Metal Films. Springer Tracts in Modern Physics, vol 223. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-48490-6_4

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