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Cross-Sectional Photoemission Spectromicroscopy of Semiconductor Heterostructures

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Nanoscale Spectroscopy and Its Applications to Semiconductor Research

Part of the book series: Lecture Notes in Physics ((LNP,volume 588))

Abstract

A natural application of the emerging technique of photoemission microscopy to the study of semiconductor interfaces is direct determination of heterojunction parameters by measuring the device in cross section. We present here results on p-n GaAs homojunctions, which served as a prototype system to demonstrate the applicability of this novel technique to buried semiconductor interfaces. We also describe preliminary measurements of the electrostatic potential profile across Al/GaAs Schottky junctions.

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Author information

Authors and Affiliations

  1. Sincrotrone Trieste, I-34012, Trieste, Basovizza, Italy

    F. Barbo, M. Bertolo, A. Bianco, G. Cautero, S. Fontana, T. K. Johal, S. La Rosa, R. C. Purandare & N. Svetchnikov

  2. Laboratorio Nazionale TASC-INFM, Area Science Park, I-34012, Trieste, Italy

    A. Franciosi, T. K. Johal, D. Orani, M. Piccin & S. Rubini

  3. INFN - Laboratori Nazionali di Frascati, P.O. Box 13, I-00044, Frascati, Italy

    R. Cimino

Authors
  1. F. Barbo
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  2. M. Bertolo
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  3. A. Bianco
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  4. G. Cautero
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  5. R. Cimino
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  6. S. Fontana
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  7. A. Franciosi
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  8. T. K. Johal
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  9. S. La Rosa
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  10. D. Orani
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  11. M. Piccin
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  12. R. C. Purandare
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  13. S. Rubini
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  14. N. Svetchnikov
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Editor information

Editors and Affiliations

  1. NTT Basic Research Laboratories, 3-1,Morinosato Wakamiya, 243-0198, Atsugi-shi Kanagawa, Japan

    Yoshio Watanabe

  2. Istituto MASPEC, Parco Area delle Science 37/A, 43010, Parma, Italy

    Giancarlo Salviati

  3. Sincrotrone Trieste, AREA Science Park Strada Statale 14, Km 163,5, 34012, Trieste, Basovizza, Italy

    Stefan Heun

  4. Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, 152-8551, Tokyo, Japan

    Naoki Yamamoto

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© 2002 Springer-Verlag Berlin Heidelberg

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Barbo, F. et al. (2002). Cross-Sectional Photoemission Spectromicroscopy of Semiconductor Heterostructures. In: Watanabe, Y., Salviati, G., Heun, S., Yamamoto, N. (eds) Nanoscale Spectroscopy and Its Applications to Semiconductor Research. Lecture Notes in Physics, vol 588. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45850-6_11

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  • DOI: https://doi.org/10.1007/3-540-45850-6_11

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-43312-5

  • Online ISBN: 978-3-540-45850-0

  • eBook Packages: Springer Book Archive

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