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Electrical Spin Injection from Ferromagnetic Metals into GaAs

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Advances in Solid State Physics

Part of the book series: Advances in Solid State Physics ((ASSP,volume 42))

Abstract

Electrical injection of spin polarized electrons is observed at ferromagnetsemiconductor interfaces by analyzing the electroluminescence signal of GaAs/ (In,Ga)As light emitting diodes (LED) with injection layers of the metals Fe or MnAs. The circular polarization degree of the emitted light reveals a spin polarization for recombining electrons of about 1.5% to 2%. Time-resolved data on spin relaxation times indicate that the actual spin injection efficiency from both Fe and MnAs into GaAs is about 5% to 6%. The underlying injection mechanism can be explained in terms of a tunneling process.

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Authors and Affiliations

  1. Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117, Berlin, Germany

    Manfred Ramsteiner, Haijun Zhu, Atsushi Kawaharazuka, Hsin-Yi Hao & Klaus H. Ploog

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  1. Manfred Ramsteiner
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  2. Haijun Zhu
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  3. Atsushi Kawaharazuka
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  4. Hsin-Yi Hao
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  5. Klaus H. Ploog
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Editors and Affiliations

  1. I Institut für Theoretische Physik, Universität Hamburg, Jungiusstraße 9, 20355, Hamburg, Germany

    Bernhard Kramer

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© 2002 Springer-Verlag Berlin Heidelberg

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Ramsteiner, M., Zhu, H., Kawaharazuka, A., Hao, HY., Ploog, K.H. (2002). Electrical Spin Injection from Ferromagnetic Metals into GaAs. In: Kramer, B. (eds) Advances in Solid State Physics. Advances in Solid State Physics, vol 42. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45618-X_8

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  • DOI: https://doi.org/10.1007/3-540-45618-X_8

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-42907-4

  • Online ISBN: 978-3-540-45618-6

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