Abstract
Due to its band gap of 3.3 eV and exciton binding energy of 60 meV ZnO is a very interesting candidate for UV optoelectronics. Beyond that, the incorporation of magnetic impurities allows to fabricate semimagnetic semiconductors, which are potentially ferromagnetic at room temperature. Recent results on the MOVPE growth of ZnO will be reported and compared to the status of MBE-ZnO material. The optimization of the MOVPE process on various substrates will be described. Diethyl-zinc (DEZn) and an alcohole has been used as Zn- and oxygen precursor, respectively. The ZnO MOVPE layers have been analyzed by a variety of techniques, including HRXRD, PL, CL, CV, Hall and AFM.
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Waag, A. et al. (2002). ZnO Metal Organic Vapor Phase Epitaxy: Present State and Prospective Application in Optoelectronics and Spin Electronics. In: Kramer, B. (eds) Advances in Solid State Physics. Advances in Solid State Physics, vol 42. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45618-X_7
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DOI: https://doi.org/10.1007/3-540-45618-X_7
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