Abstract
Incorporation of substitutional carbon (≈ 1020cm−3) into the SiGe region of a heteroj unction bipolar transistor (HBT) strongly reduces boron diffusion during device processing. We describe the physical mechanism behind the suppression of B diffusion in C-rich Si and SiGe, and explain how the increased thermal stability of doping profiles in SiGe:C HBTs can be used to improve device performance. Manufacturability of SiGe:C HBTs with transit frequencies of 100 GHz and maximum oscillation frequencies of 130 GHz is demonstrated in a BiCMOS technology capable of fabricating integrated circuits for radio frequencies with high yield.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
D. L. Harame et al.: IEEE Trans. Electron Devices 48, 2575 (2001).
E.J. Prinz, P.M. Garone, P.V. Schwartz, X. Xiao, J.C. Sturm: IEEE Electron Device Lett. 12, 42 (1991).
L. D. Lanzerotti et al.: in Technical Digest, International Electron Device Meeting, (IEEE, Piscataway, NJ, 1996) p. 249.
H. J. Osten et al.: in Technical Digest, Int. Electron Device Meeting, (IEEE, Piscataway NJ, 1997), p. 803.
B. Heinemann et al.: in Technical Digest, Int. Electron Device Meeting, (IEEE, Piscataway NJ, 2001), p. 348.
S. J. Jeng et al.: IEEE Electron Device Lett. 22, 542 (2001).
H. J. Osten: Carbon-Containing layers on Silicon, Growth, Properties, and Device Application (Transtech Publications, Zürich 1999).
H. Rücker, B. Heinemann, W. Röpke, R. Kurps, D. Krüger, G. Lippert, H.J. Osten: Appl. Phys. Lett. 73, 1682 (1998).
R. B. Fair: in Impurity Doping Processes in Silicon, F. F. Y. Wang (Ed.) (North-Holland, Amsterdam, The Netherlands, 1981), p. 315.
R. Scholz, U. Gösele, J.-Y. Huh, T. Y. Tan: Appl. Phys. Lett. 72, 200 (1998).
R. F. Scholz, P. Werner, U. Gösele, T. Y. Tan: Appl. Phys. Lett. 74, 392 (1999).
J. P. Kalejs, L. A. Ladd, U. Gösele: Appl. Phys. Lett. 45, 268 (1984).
H. Bracht, N. A. Stolwijk, H. Mehrer: Phys. Rev. B 52, 16542 (1995).
F. Rollert, N. A. Stolwijk, H. Mehrer: Materials Science Forum 38–41, 753 (1989).
H. Rücker, B. Heinemann, R. Kurps: Phys. Rev. B 64, 073202 (2000).
N. E. B. Cowern, P. C. Zalm, P. van der Sluis, D. J. Gravensteijn, W. B. de Boer: Phys. Rev. Lett. 72, 2585 (1994).
H. Rücker, B. Heinemann: Solid-State Electronics 44, 783 (2000).
P. A. Stolk, D. J. Eaglesham, H.-J. Gossmann, J. M. Poate: Appl. Phys. Lett. 66, 1370 (1995).
H. Rücker, B. Heinemann, D. Bolze, R. Kurps, D. Krüger, G. Lippert, H. J. Osten: Appl. Phys. Lett. 74, 3377 (1999).
M. D. Giles: J. Electrochem. Soc. 138, 1160 (1991).
K. E. Ehwald et al.: in Technical Digest, Int. Electron Device Meeting, (IEEE, Piscataway NJ, 1999), p. 561.
D. Knoll et al.: in Technical Digest, Int. Electron Device Meeting, (IEEE, Piscataway NJ, 2001), p. 499.
B. Heinemann et al. in: Proceedings 27th Europ. Solid-State Device Research Conf., H. Grünbacher (Ed.) (Editions Frontiers, Paris, 1997), p. 544.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2002 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Rücker, H., Heinemann, B., Knoll, D., Ehwald, KE. (2002). SiGe:C Heterojunction Bipolar Transistors: From Materials Research to Chip Fabrication. In: Kramer, B. (eds) Advances in Solid State Physics. Advances in Solid State Physics, vol 42. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45618-X_37
Download citation
DOI: https://doi.org/10.1007/3-540-45618-X_37
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-42907-4
Online ISBN: 978-3-540-45618-6
eBook Packages: Springer Book Archive