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On the Way to the II–VI Quantum Dot VCSEL

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Part of the Advances in Solid State Physics book series (ASSP,volume 42)

Abstract

Formation mechanisms of quantum dots in the system CdSe/ZnSe are thoroughly analyzed in this paper. Defect free QDs are generated by segregation enhanced CdSe reorganisation and not by the Stranski-Krastanov growth mode. Stacking fault formation is enhanced in QD stacks and reduced by using strain compensating ZnSSe spacer layers. For a fivefold QD stack in a laser structure a T 0 value of about 1200 K up to 100 K was determined by threshold measurements. Electrically pumped lasing at room temperature was achieved above a threshold current density of 7.5 kA/cm2. Degradation measurements prove a higher stability of QDs against high current injection as compared to quantum wells. High reflectivities of above 99 % for undoped and p-type doped distributed Bragg reflectors based on ZnSe and MgS/ZnSe superlattices have been obtained. Monolithic vertical resonators possess a quality factor of about 100.

Keywords

  • Threshold Current Density
  • Mirror Pair
  • High Current Injection
  • VCSEL Structure
  • Conventional Molecular Beam Epitaxy

These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Passow, T. et al. (2002). On the Way to the II–VI Quantum Dot VCSEL. In: Kramer, B. (eds) Advances in Solid State Physics. Advances in Solid State Physics, vol 42. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45618-X_2

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  • DOI: https://doi.org/10.1007/3-540-45618-X_2

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-42907-4

  • Online ISBN: 978-3-540-45618-6

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