Abstract
Path-integral Monte Carlo simulations have been employed to study strong electron tunneling in the single-electron box (a small metallic island coupled to an electrode by a tunnel junction). Results will be presented for the free energy of this system, as well as for the average charge on the island, as a function of the tunneling strength, the temperature, and an external bias voltage. In much of the parameter range an extrapolation to the ground state (T = 0) is possible. Our results for the effective charging energy for strong tunneling will be compared with earlier theoretical predictions and Monte Carlo simulations.
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© 2000 Springer-Verlag Berlin Heidelberg
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Herrero, C.P., Schön, G., Zaikin, A.D. (2000). Strong Charge Fluctuations in the Single-Electron Box: A Quantum Monte Carlo Analysis. In: Reguera, D., Rubí, J.M., Platero, G., Bonilla, L.L. (eds) Statistical and Dynamical Aspects of Mesoscopic Systems. Lecture Notes in Physics, vol 547. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45557-4_25
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DOI: https://doi.org/10.1007/3-540-45557-4_25
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