Abstract
Recent months have seen a startling activity and a rapid development in the area of spin-coherent transport in semiconductors. This research is driven by the need for integration of spin-electronic devices into conventional semiconductor technology. Devices based on spin-dependent effects such as read heads for hard disks or non-volatile magnetic random access memory (MRAM)had (and are supposed to have in the near future)a strong impact on storage technology [1,2]. These areas, however, are well separated from standard Si technology and, although these are highly market relevant, a new approach has to be developed in order to transfer the benefits of spin-electronics into MOSFET technology.
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Ziese, M. (2001). Spin Transport in Semiconductors. In: Ziese, M., Thornton, M.J. (eds) Spin Electronics. Lecture Notes in Physics, vol 569. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45258-3_17
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