Abstract
High-performance InP-based Vertical-Cavity Surface-Emitting Lasers for the 1.45–1.85 μm wavelength range have been fabricated applying the buried-tunnel-junction structure on the InGaAlAs-InP material system. With this technique very small thermal and electrical resistances can be achieved enabling the continuous-wave operation up to 90° C. Record stationary parameters have been demonstrated, such as sub-mA threshold currents, low electrical resistances of 30–60 Ω for 5–10 μm diameter, 0.9 V threshold voltage at 1.55 μm wavelength and stably polarized single-mode operation with side-mode suppression of the order of 50 dB.
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Amann, MC., Ortsiefer, M., Shau, R., Roßkopf, J., Köhler, F., Böhm, G. (2001). Long-Wavelength Buried-Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers. In: Kramer, B. (eds) Advances in Solid State Physics. Advances in Solid State Physics Volume 41, vol 41. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-44946-9_7
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DOI: https://doi.org/10.1007/3-540-44946-9_7
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