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The Micromagnetics of Magnetoresistive Random Access Memory

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Spin Dynamics in Confined Magnetic Structures I

Part of the book series: Topics in Applied Physics ((TAP,volume 83))

Abstract

This review presents the fundamental understanding of micromagnetic behavior in patterned magnetic thin film elements, in particular, the magnetic switching characteristics of various magnetoresistive random access memory (MRAM) device designs. Application of micromagnetic theory to modeling of MRAM devices will be introduced. Comparison between modeling and experimental studies is presented for the validity of the modeling technique. In the review, pseudo spin-valve, magnetic tunneling junction, and vertical giant magnetoresistive multilayer (VMRAM) designs are discussed in detail in terms of their magnetic switching robustness and area storage densities. Micromagnetic analysis of magnetic switching properties of various shaped memory elements are presented. Through the analysis, it becomes evident that the key to the success of the MRAM technology is the robustness of magnetic switching in a device design. It is concluded that VMRAM design provides the most robust switching characteristics and highest storage density due to the flux-closure mode that generates no stray field and no demagnetization field.

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Author information

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Carnegie Mellon University Pittsburgh, Pennsylvania, USA

    Jian-Gang Zhu

  2. Headway Technology, Inc., Milpitas, California, USA

    Youfeng Zheng

Authors
  1. Jian-Gang Zhu
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  2. Youfeng Zheng
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Editor information

Editors and Affiliations

  1. Fachbereich Physik, Universität Kaiserslautern, Erwin-Schrödinger-Straße 56, 67663, Kaiserslautern, Germany

    Burkard Hillebrands

  2. Groupe d’Etude des Materiaux Metalliques, Institut de Physique et Chimie des Materiaux de Strasbourg, 23, rue de Losses, 67037, Strasbourg Cedex, France

    Kamel Ounadjela

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© 2002 Springer-Verlag Berlin Heidelberg

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Zhu, JG., Zheng, Y. (2002). The Micromagnetics of Magnetoresistive Random Access Memory. In: Hillebrands, B., Ounadjela, K. (eds) Spin Dynamics in Confined Magnetic Structures I. Topics in Applied Physics, vol 83. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-40907-6_9

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  • DOI: https://doi.org/10.1007/3-540-40907-6_9

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-41191-8

  • Online ISBN: 978-3-540-40907-6

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