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References
A. Ahland, D. Schulz, and E. Voges. Efficient modeling of the optical properties of MQW modulators on InGaAsP with absorption edge merging. IEEE Journal of Quantum Electronics, 34, 1597–1603, 1998.
T. B. Bahder. Eight-band k · p model of strained zinc-blende crystals. Physical Review B, 41(17), 11992–12001, 1990.
G. Bastard. Wave Mechanics applied to Semiconductor Heterostructures. Halsted Press, 1988.
M. Bass, editor. Handbook of optics. 2. Devices, measurement, and properties. McGraw-Hill, New York, 1995.
U. Bandelow, H. Gajewski, and R. Hünlich. Fabry-Perot Lasers: Thermodynamics-Based Modeling. In J. Piprek, editor, Optoelectronic Devices. Springer, 2005.
U. Bandelow, H. Gajewski, and H.-C. Kaiser. Modeling combined effects of carrier injection, photon dynamics and heating in Strained Multi-Quantum Well Lasers. In M. O. Rolf H. Binder, Peter Blood, editor, Physics and Simulation of Optoelectronic Devices VIII, volume 3944 of Proceedings of SPIE, pages 301–310, August 2000.
U. Bandelow, R. Hünlich, and T. Koprucki. Simulation of Static and Dynamic Properties of Edge-Emitting Multiple-Quantum-Well Lasers. IEEE Journal of Selected Topics in Quantum Electronics, 9, 798–806, 2003.
U. Bandelow and T. Koprucki. WIAS-QW. Online: http://www.wias-berlin.de/software/qw.
U. Bandelow, H.-C. Kaiser, T. Koprucki, and J. Rehberg. Spectral properties of k · p Schrödinger operators in one space dimension. Numerical Functional Analysis and Optimization, 21, 379–409, 2000.
U. Bandelow, H.-C. Kaiser, T. Koprucki, and J. Rehberg. Modeling and simulation of strained quantum wells in semiconductor lasers. In W. Jäger and H.-J. Krebs, editors, Mathematics-Key Technology for the Future. Joint Projects Between Universities and Industry, pages 377–390. Springer Verlag, Berlin Heidelberg, 2003.
F. Bloch. Über die Quantenmechanik der Electronen in Kristallgittern. Z. Physik, 52, 555–600, 1932.
G. L. Bir and G. E. Pikus. Symmetry and Strain-Induced Effects in Semiconductors. John Wiley & Sons, New York, 1974. Übersetzung aus dem Russischen von P. Shelnitz.
M. G. Burt. The justification for applying the effective-mass approximation to microstructures. J. Physics. Condens. Matter, 4, 6651–6690, 1992.
M. G. Burt. Direct derivation of effective-mass equations for microstructures with atomically abrupt boundaries. Physical Review B, 50(11), 7518–7525, 1994.
M. G. Burt. Fundementals of envelope function theory for electronic states and photonic modes in nanostructures. J. Physics. Condens. Matter, 11, R53–R83, 1999.
M. Cardona. Fundamentals of Semiconductors. Springer, Berlin, 1996.
M. L. Cohen and T. K. Bergstresser. Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures. Phys. Rev., 141, 789–796, 1966.
J. R. Chelikowsky and M. L. Cohen. Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors. Phys. Rev. B, 14, 556–582, 1976.
C. Y.-P. Chao and S. L. Chuang. Spin-orbit-coupling effects on the valenceband structure of strained semiconductor quantum wells. Physical Review B, 46(7), 4110–4122, 1992.
S. L. Chuang and C. S. Chang. k·p method for strained wurtzite semiconductors. Phys. Rev. B, 54, 2491–2504, 1996.
S. L. Chuang. Physics of optoelectronic Devices. Wiley & Sons, New York, 1995.
W. W. Chow, S. W. Koch, and M. S. III. Semiconductor-Laser Physics. Springer-Verlag, Berlin, 1994.
P. Debernardi and P. Fasano. Quantum confined Stark effect in semiconductor quantum wells including valence band mixing and Coulomb effects. IEEE Journal of Quantum Electronics, 29, 2741–2755, 1993.
P. Enders, A. Bärwolff, M. Woerner, and D. Suisky. k·p theory of energy bands, wave functions and optical selection rules in strained tetrahedral semiconductors. Physical Review B, 51(23), 16695–16704, 1995.
P. Enders. Enhancement and spectral shift of optical gain in semiconductors from non-markovian intraband relaxation. IEEE Journal of Quantum Electronics, 33(4), 580–588, 1997.
P. Enders and M. Woerner. Exact 4×4 block diagonalization of the eightband k · p Hamiltonian matrix for tetrahedral semiconductors and its application to strained quantum wells. Semicond. Sci. Technol., 11, 983–988, 1996.
B. A. Foreman. Effective-mass Hamiltonian and boundary conditions for the valence bands of semiconductor microstructures. Physical Review B, 48(7), 4964–4967, 1993.
B. A. Foreman. Elimination of spurious solutions from eight-band k · p theory. Physical Review B, 56(20), R12748–R12751, 1997.
H. Gajewski. Analysis und Numerik von Ladungstransport in Halbleitern (Analysis and numerics of carrier transport in semiconductors). Mitt. Ges. Angew. Math. Mech., 16(1), 35–57, 1993.
H. H. Gao, A. Krier, and V. V. Sherstnev. Appl. Phys. Lett., 77, 872, 2000.
E. O. Kane. The k · p Method. In R. K. Willardson and A. C. Beer, editors, Semiconductors and Semimetals, volume 1, chapter 3, pages 75–100. Academic Press, New York and London, 1966.
E. O. Kane. Energy Band Theory. In W. Paul, editor, Handbook on Semiconductors, volume 1, chapter 4a, pages 193–217. North-Holland, Amsterdam, New York, Oxford, 1982.
T. Kato. Pertubation theory for linear operators, volume 132 of Grundlehren der mathematischen Wissenschaften. Springer Verlag, Berlin, 1984.
T. Koprucki, M. Baro, U. Bandelow, T. Tien, F. Weik, J. Tomm, M. Grau, and M.-C. Amann. Electronic structure and optoelectronic properties of strained InAsSb/GaSb multiple quantum wells. Appl. Phys. Lett., 87, 81911/1–181911/3, 2005.
M. P. C. M. Krijn. Heterojunction band offsets and effective masses in III–V quarternary alloys. Semicond. Sci. Technol., 6, 27–31, 1991.
A. T. Meney, B. Gonul, and E. P. O’Reilly. Evaluation of various approximations used in the envelope-function method. Physical Review B, 50(15), 10893–10904, 1994.
G. D. Sanders and K. K. Bajaj. Electronic properties and optical-absorption spectra of GaAs-AlxGa1−x As quantum wells in externally appield electric fields. Phys. Rev. B, 35, 2308–2320, 1987.
J. Singh. Physics of semiconductors and their heterostructures. McGraw-Hill, New York, 1993.
X. C. Soler. Theoretical Methods for Spintronics in Semiconductors with Applications. PhD thesis, California Institute of Technology, Pasadena, California, USA, 2003.
O. Stier. Electronic and Optical Properties of Quantum Dots and Wires. Dissertation TU Berlin, Germany. Wissenschaft & Technik Verlag, Berlin, 2001.
C. G. Van de Walle. Band lineups and deformation potentials in the model-solid theory. Phys. Rev. B, 39, 1871–1883, 1989.
I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan. Band parameters for III-V compound semiconductors and their alloys. J. Appl. Phys., 89, 5815–5875, 2001.
H. Wenzel. How to use the kp8 programs. Online: http://www.fbhberlin.de/people/wenzel/kp8.html.
A. Wilk, M. E. Gazouli, M. E. Skouri, P. Cristol, P. Grech, A. N. Baranov, and A. Joullie. Appl. Phys. Lett., 77, 2298, 2000.
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Koprucki, T., Kaiser, HC., Fuhrmann, J. (2006). Electronic States in Semiconductor Nanostructures and Upscaling to Semi-Classical Models. In: Mielke, A. (eds) Analysis, Modeling and Simulation of Multiscale Problems. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-35657-6_13
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