Why does a p-doped area show a higher contrast in electron holography than a n-doped area of the same dopant concentration?

  • A Lenk
  • U Muehle
  • H Lichte
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 107)


Holographic measurement of semiconductor dopant profiles combined with focused ion beam (FIB) preparation has become increasingly important. Electron holography in a transmission electron microscope (TEM) delivers 2D-projected potential images of a 3D-object. However, for an exact quantitative evaluation it is necessary to understand the potential distribution in a FIB-specimen along the electron beam. Because the distribution is averaged in the 2D-projection, the structure along z is lost. It is shown that the averaging process has an unexpectedly different impact on the 2D-projections for complementarily doped structures. The result is a remarkably stronger signal and better contrast for p-doped structures in the phase image, compared to that of n-doped structures.


Potential Distribution Potential Structure Electron Holography Scanning Electron Microscope Topview Profile Scan 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2005

Authors and Affiliations

  • A Lenk
    • 2
  • U Muehle
    • 1
  • H Lichte
    • 2
  1. 1.Infineon Technologies Dresden GmbH & Co OHGGermany
  2. 2.Institute of Structure Physics, TriebenberglaborDresden UniversityDresdenGermany

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