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Quantification of the influence of TEM operation parameters on the error of HREM image matching

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Microscopy of Semiconducting Materials

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 107))

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Abstract

In this paper we describe a pattern recognition system implemented to determine thickness and defocus from HRTEM simulated images. A specific task has been designed to quantify the influence of certain operation parameters of a transmission electron microscope in the global recognition error rate. This influence allows us to estimate human recognition confidence when applying pattern matching to the determination of thickness and defocus from HRTEM maps. The images considered in this task correspond to InP with the sphalerite crystalline structure and were simulated using the EMS computer software package.

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© 2005 Springer-Verlag Berlin Heidelberg

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Pizarro, J., Guerrero, E., Galindo, P., Yañez, A., Ben, T., Molina, S.I. (2005). Quantification of the influence of TEM operation parameters on the error of HREM image matching. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_39

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