Abstract
Observations of orthogonal orientations demonstrate the development of banded contrast features on inclined \( \left\{ {\bar 1\bar 1\bar 1} \right\} \) B planes for the [110] projection within micron thick samples, attributed to a compositional fluctuation in the Mn content. The relationship of Mn content and layer critical thickness for the onset of precipitate and stacking fault formation is investigated. The formation of a Mn-O layer at the surface of the samples is also observed. The growth of GaMnN/(001)GaAs heterostructures with and without AlN/GaN buffer layers is also compared. Layers without buffer layers show MnAs inclusions into the GaAs, with a reduced Mn content of the GaMnN layer significantly below the nominal composition. The use of AlN/GaN buffer layers is found to greatly reduce the density of these MnAs inclusions, retaining a higher proportion of the Mn within the epilayer.
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Fay, M.W. et al. (2005). Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_28
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DOI: https://doi.org/10.1007/3-540-31915-8_28
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
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