Etch Rate Etch Process Anisotropic Etching Etch Mask Convex Corner 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [Baum97]
    Baum T, Schiffrin D (1997) AFM study of surface finish improvement by ultrasound in the anisotropic etching of Si <100> in KOH for micromachining applications. J Micromech Microeng 7: 338–342CrossRefGoogle Scholar
  2. [Bhat93]
    Bhatnagar YK, Nathan A (1993) On pyramidal protrusions in anisotropic etching of <100> silicon. Sensors and Actuators A: 233–240Google Scholar
  3. [Bres96]
    Bressers PMMC et al. (1996) Surface morphology of p-type (100) silicon etched in aqueous alkaline solution. J Electrochem Soc 143,5: 1744–1750Google Scholar
  4. [Chen01]
    Chen PH et al. (2001) The characteristic behaviour of TMAH water solution for anisotropic etching on both silicon substrate and SiO2 layer. Sensors and Actuators A: 132–137Google Scholar
  5. [Diet93]
    Dietrich D, Frühauf J (1993) Computer simulation of the development of dish-shaped deepenings by orientation dependent etching of {100}-silicon. Sensors and Actuators A 39: 261–262CrossRefGoogle Scholar
  6. [Dötz00]
    Dötzel W (2000) Charakterisierung eätzter optischer Si-Bulk-Elemente. Arbeits-und Ergebnisbericht SFB 379: Mikromechanische Sensor-und Aktorarrays, Teilprojekt A1-Komponentenentwurf, Technische Universität Chemnitz: 25–28Google Scholar
  7. [Find92]
    Findler J et al. (1992) Temporal evolution of silicon surface roughness during anisotropic etching processes. Proceedings of IEEE Micro Electro Mecanical Systems (MEMS) ‘92, Germany: 62–64Google Scholar
  8. [Früh2-97]
    Frühauf J, Hannemann B, Gerber M (1997) Ätzraten und Oberflächenqualitäten beim Silizium-Ätzen in der Mikrotechnik. Internal Report SMWK-Projektförderung 0380/509, Technische Universität ChemnitzGoogle Scholar
  9. [Früh3-97]
    Frühauf J, Hannemann B (1997) Anisotropic multi-step etch processes of silicon. J Micromech Microeng 7: 1–4Google Scholar
  10. [Früh2-00]
    Frühauf J, Hannemann B (2000) Wet etching of undercut sidewalls in {001}-silicon. Sensors and Actuators 79: 55–63CrossRefGoogle Scholar
  11. [Früh03]
    Frühauf J, Krönert S, Krüger-ehm R (2003) Precision of etched bulk silicon structures with dimensions up to the mm-range. Proc of the euspen Int Topical Conf, Germany: 253–256Google Scholar
  12. [Hanf02]
    Hanf M et al. (2002) Realization of electrostatically driven actuators using curved electrodes fabricated by using silicon bulk micromachining techniques. Actuator 2002: Proc of the Int Conf on new Actuators, Germany: 329–332Google Scholar
  13. [Hein00]
    Hein A et al. (2000) The effects of thermal treatment on the anisotropic etching behaviour of Cz-and Fz-silicon. Sensors and Actuators 86: 86–90CrossRefGoogle Scholar
  14. [Hohm86]
    Hohm D (1986) Kapazitive Silizium-Sensoren für Hörschallanwendungen. VDI-Fortschrittsberichte, Reihe 10, 60, VDI-Verlag, DüsseldorfGoogle Scholar
  15. [Kamp95]
    van Kampen RP, Wolffenbuttel RF (1995) Effects of <110>-oriented corner compensation structures on membrane quality and convex corner integrity in (100)-silicon using aqueous KOH. J Micromech Microeng 5: 91–94CrossRefGoogle Scholar
  16. [Kim98]
    Kim B, Cho DD (1998) Aqueous KOH-etching of silicon (110): Etch characteristics and compensation methods for convex corners. J Electrochem Soc 145,7: 2499–2508Google Scholar
  17. [Kuhn02]
    Kuhn M et al. (2002) Optische Gitter auf Mikroaktuatoren — Herstellung und Einsatz. Scientific Reports: Journal of the University of Applied Sciences Mittweida, 10, 167–172Google Scholar
  18. [Kwa95]
    Kwa TA et al. (1995) Anisotropically etched silicon mirrors for optical sensor applications. J Electrochem Soc 142,4: 1226–1233Google Scholar
  19. [Li96]
    Li X, Bao M, Shen S (1996) Maskless etching of three-dimensional silicon structures in KOH. Sensors and Actuators A 57: 47–52CrossRefGoogle Scholar
  20. [LiuJH95]
    Liu JH, Betzner TM, Hendersson HT (1995) Etching of self sharpening {338} tips in (100) silicon. J Micromech Microeng 5: 18–24CrossRefGoogle Scholar
  21. [Merl93]
    Merlos A et al. (1993) TMAH-IPA anisotropic etching characteristics. Sensors and Actuators A 37–38: 737–743CrossRefGoogle Scholar
  22. [Müll00]
    Müller T et al. (2000) Assessment of silicon wafer material for the fabrication of integrated cicuit sensors. J Electrochem Soc, 147: 1604–1611CrossRefGoogle Scholar
  23. [Nij00]
    Nijdam AJ et al. (2000) Etching pits and dislocations in Si{111}. Sensors and Actuators 86: 238–247CrossRefGoogle Scholar
  24. [Nij01]
    Nijdam AJ et al. (2001) Influence of the angle between etched (near Si{111} surfaces and the substrate orientation on the underetch rate during anisotropic wet-chemical etching of silicon. J Micromech Microeng 11: 499–503CrossRefGoogle Scholar
  25. [Nik97]
    Nikpour et al. (1997) Patterns for concave corner compensation between vertical (010)-(001) planes on Si (100) anisotropically etched in TMAH. Transducers ‘97: Proc of the 9th Int Conf on Solid-State Sensors and Actuators, USA: 691–694Google Scholar
  26. [Off90]
    Offereins HL, Sandmaier H (1990) Stressfreie Chipmontage. Mikroelektronik, Heft 1, VDE-VerlagGoogle Scholar
  27. [Res00]
    Resnik D, Vrtacnik D, Amon S (2000) Morphological study of {311} crystal planes anisotropically etched in (100) silicon: role of etchants and etching parameters. J Micromech Microeng 10: 430–469CrossRefGoogle Scholar
  28. [Res03]
    Resnik D et al. (2003) Effective roughness reduction of {100} and {311} planes in anisotropic etching of {100} silicon in 5 % TMAH. J Micromech Microeng 13: 26–34CrossRefGoogle Scholar
  29. [Sar00]
    Sarro PM et al. (2000) Effect of surfactant on surface quality of silicon microstructures etched in saturated TMAHW solutions. Sensors and Actuators 85: 340–345CrossRefGoogle Scholar
  30. [Sato2-99]
    Sato K et al. (1999) Roughening of single-crystal silicon surface etched by KOH water solution. Sensors and Actuators 73: 122–130CrossRefGoogle Scholar
  31. [Schei95]
    Scheibe C, Obermeier E (1995) Compensating corner undercutting in anisotropic etching of (100) silicon for chip separation. J Micromech Microeng 5: 109–111CrossRefGoogle Scholar
  32. [Seki2-99]
    Sekimura M, Naruse H (1999) Fabrication of 45° optical mirrors on (100) silicon using surfactant-added TMAH solution. Transducers ‘99: Proc of the 10th Int Conf on Solid-State Sensors and Actuators, Japan: 550–551Google Scholar
  33. [Shie99]
    Shie JS, Yu SH (1999) A micromachined silicon submount package for vertical emission of edge emitting laser diodes. Transducers ‘99: Proc of the 10th Int Conf on Solid-State Sensors and Actuators, Japan: 1490–1493Google Scholar
  34. [Shik00]
    Shikida M et al. (2000) Surface morphology of anisotropically etched single-crystal silicon. J Micromech Microeng 10: 522–527CrossRefGoogle Scholar
  35. [Shik2-01]
    Shikida M et al. (2001) Surface roughness of single-crystal silicon etched by TMAH solution. Sensors and Actuators A 90: 223–231CrossRefGoogle Scholar
  36. [Tana03]
    Tanaka H et al. (2003) Fast wet anisotropic etching of Si{100} and {110} with a smooth surface in ultra-high temperature KOH solutions. Transducers ‘03: Proc of the 12th Int Conf on Solid-State Sensors and Actuators, USA: 1675–1678Google Scholar
  37. [Tan94]
    Tan S et al. (1994) Morphology of etch hillock defects created during anisotropic etching of silicon. J Micromech Microeng 4: 147–155CrossRefGoogle Scholar
  38. [Thong01]
    Thong JTL et al. (2001) Evolution of hillocks during silicon etching in TMAH. J Micromech Microeng 11: 61–69CrossRefGoogle Scholar
  39. [Tran95]
    Tran E, Kim ES, Lee SY (1995) Fabrication of mesas and octagonal cones in silicon by wet chemical etching. J Micromech Microeng 5: 251–256CrossRefGoogle Scholar
  40. [Vang2-96]
    Vangbo M, Bäcklund Y (1996) Terracing of (100) Si with one mask and one etching step using misaligned V-grooves. J Micromech Microeng 6: 39–42CrossRefGoogle Scholar
  41. [Veen01]
    van Veenendaal E et al. (2001) Micromorphology of single crystalline silicon surfaces during anisotropic wet chemical etching in KOH and TMAH. Sensors and Actuators A 93: 219–231CrossRefGoogle Scholar
  42. [Zav94]
    Zavracky PM et al. (1994) Fabrication of vertical sidewalls by anisotropic etching of silicon (100) wafers. J Electrochem Soc 141,11: 3182–3188Google Scholar
  43. [Ziel95]
    Zielke D, Frühauf J (1995) Determination of rates for orientation-dependent etching. Sensors and Actuators A 48: 151–156CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2005

Personalised recommendations