Non-Volatile Memory Design


Threshold Voltage Supply Voltage Read Operation Control Gate Address Input 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. S. Aritome, “Advance Flash memory technology and trends for file storage application”, in IEDM Tech. Dig., pp. 763–766, (2000).Google Scholar
  2. H.P. Belgal et al., “A new reliability model for post-cycling charge retention of Flash memories”, Proc. IRPS, pp. 7–20, (2002).Google Scholar
  3. R. Bez, “Introduction to Flash Memory”, IEEE Proceeding of the, Vol. 91, No. 4, pp. 489–502, (April 2003).MathSciNetGoogle Scholar
  4. W.D. Brown and J. E. Brewer, eds., Nonvolatile Semiconductor Memory Technology. New York, NY: IEEE Press, (1998).Google Scholar
  5. C. Calligaro et al., Proc. 3rd IEEE Int. Conf. on Electronics Circuits and Systems, pp.1005, (1996).Google Scholar
  6. G. Campardo, R. Micheloni, “Scanning the special issue on Flash Memory technology”, IEEE Proceeding of the, Vol. 91, No. 4, pp. 483–488, (April 2003).Google Scholar
  7. P. Cappelletti, R. Bez, D. Cantarelli and L. Fratin, “Failure mechanisms of Flash cell in program/erase cycling”, IEDM Tech. Dig., pp. 291–264, (1994).Google Scholar
  8. P. Cappelletti, A. Modelli, “Flash memory reliability”, in Flash memory, P. Cappelletti et al., Ed Norwell, Ma: Kluwer, (1999).Google Scholar
  9. A. Chimenton, P. Pellati, P. Olivo, “Analysis of Erratic Bits in FLASH Memories”, Proc. IRPS, 17–22, (2001).Google Scholar
  10. A. Conci, et al., Current criticalities and innovation perspective in Flash memory design automation”, IEEE Proceeding of the, Vol. 91, No. 4, pp. 581–593, (April 2003).Google Scholar
  11. G. Crisenza, C. Clementi, G, Ghidini and M. Tosi, “Floating gate memories”, Qual. Reliab. Eng. Int., vol. 8, pp.177–187, (1992).Google Scholar
  12. G. Crisenza, G. Ghidini, S. Manzini, A. Modelli, M. Tosi, “charge loss in EPROM due to ion generation and transport in interlevel dielectrics”, IEDM Tech. Dig., pp. 107–110, (1990).Google Scholar
  13. D. Ielmini, A.S. Spinelli, A.L. Lacaita, L. Confalonieri and A. Visconti, “New technique for fast characterisation of SILC distribution in Flash arrays”, Proc. IRPS, 73–80, (2001).Google Scholar
  14. D. Ielmini, A.S. Spinelli, A.L. Lacaita, R. Leone and A. Visconti, “Localisation of SILC in Flash memories after program/erase cycling”, Proc. IRPS, 1–6, (2002).Google Scholar
  15. D. Ielmini, A..S. Spinelli, A..L. Lacaita, A. Modelli, “Statistical Model of reliability and scaling projections for Flash memories”, IEDM Tech. Dig., (2001).Google Scholar
  16. International Technology Roadmap for Semiconductors, (2001).Google Scholar
  17. S. Keeney, “A 130nm generation high-density ETOX Flash memory technology”, IEDM Tech. Dig., p.41, (2001)Google Scholar
  18. V.N. Kynett, A. Baker, M. Fandrich, G. Hoekdtrsa, O. Jungroth, J. Kreifels and S. Well, “An in-system reprogrammable 256 K CMOS Flash memory”, ISSCC, Conf. Proc., pp. 132–133, (1988).Google Scholar
  19. S. Lai, “Flash memories: Where we were and where we are going”, IEDM Tech. Dig., pp. 971–973, (1998).Google Scholar
  20. F. Masuoka, M. Momodomi, Y. Iwata and R. Shirota, “New ultra high density EPROM and Flash with NAND structure cell”, IEDM Tech. Dig., pp. 552–555, (1987).Google Scholar
  21. A. Modelli, "Reliability of thin dielectrics for non-volatile applications", Microelectronic Engineering, 48, 403 (1999).CrossRefGoogle Scholar
  22. S. Mukherjee, T. Chang, R. Pang, M. Knecht and D. Hu, “A single transistor EEPROM cell and its implementation in a 512K CMOS EEPROM”, IEDM Tech. Dig., pp. 616–619, (1958).Google Scholar
  23. T.C. Ong et al., VLSI Symp. on Tech., 7A-2, p.83, (1993)Google Scholar
  24. P. Pavan and R. Bez, “The industrial standard Flash memory cell”, in Flash memory, P. Cappelletti et al., Ed Norwell, Ma: Kluwer, (1999).Google Scholar
  25. P. Pavan, R. Bez, P. Olivo and E. Zanoni, “Flash memory cells-An overview”, Proc. IEEE, vol. 85, pp. 1248–1271, (Aug. 1977).Google Scholar
  26. B. Ricco et al., Proc. IEEE, vol. 86, pp. 2399, (1998).CrossRefGoogle Scholar
  27. L. Selmi and C. Fiegna, “Physical aspects of cell operation and reliability”, in Flash memory, P. Cappelletti et al., Ed Norwell, Ma: Kluwer, (1999).Google Scholar
  28. Webfeet Inc., “Semiconductor industry outlook”, presented at the 2002 Non-Volatile memory Conference, Santa Clara, CA.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2005

Personalised recommendations