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Optical Properties II

  • Chapter
Fundamentals of Semiconductors

Part of the book series: Graduate Texts in Physics ((GTP))

Summary

In this chapter we have studied light emission processes in semiconductors. In photoluminescence, external radiation excites electron-hole pairs in the sample. These relax to lower energy states by giving up their excess energy to phonons. As a result, the emission produced by the relaxed electron-hole pairs is characteristic of the bandgap of the semiconductor or of gap states associated with defects. Therefore, luminescence is a very useful technique for studying excitons, bound excitons, donors, acceptors and even deep centers (such as isoelectronic traps). Some of the radiation passing through a medium is always scattered by fluctuations in the medium. Such light scattering can also be understood in terms of spontaneous emission from polarizations induced in the medium by the incident radiation. When the induced polarization is modulated by phonons (both optical and acoustic) the incident light is inelastically scattered. These emission processes, known as Raman and Brillouin scattering, are very powerful tools for determining the frequency and symmetry of vibrational modes in condensed media. Their excitation spectroscopies (known as resonant Raman or resonant Brillouin scattering), in which one measures the scattering cross section as a function of the incident photon energy, are also extremely useful. We have shown that they can be used to determine electronic excitation energies, electron-phonon interaction and dispersion of excitons. Since real electron-hole pairs are excited in resonant Raman and Brillouin scattering as well as in photoluminescence, the distinction between the two starts to blur, leading to the suggestion that resonant light scattering processes, especially multiphonon ones, can be regarded as a form on nonthermalized luminescence or hot luminescence.

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Authors and Affiliations

  1. Department of Physics, University of California, CA, 94720-7300, Berkeley, USA

    Professor Dr. Peter Y. Yu

  2. Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569, Stuttgart, Germany

    Professor Dr., Dres. h.c. Manuel Cardona

Authors
  1. Professor Dr. Peter Y. Yu
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  2. Professor Dr., Dres. h.c. Manuel Cardona
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© 1996 Springer-Verlag Berlin Heidelberg

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Yu, P.Y., Cardona, M. (1996). Optical Properties II. In: Fundamentals of Semiconductors. Graduate Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-26475-2_7

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  • DOI: https://doi.org/10.1007/3-540-26475-2_7

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-25470-6

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