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Introduction

  • Peter Y. Yu
  • Manuel Cardona
Part of the Graduate Texts in Physics book series (GTP)

Summary

In this chapter we have introduced the wide class of materials referred to as semiconductors and we have mentioned the large range of structural and physical properties they can have. Most of the semiconductors used in science and modern technology are single crystals, with a very high degree of perfection and purity. They are grown as bulk three-dimensional crystals or as thin, two-dimensional epitaxial layers on bulk crystals which serve as substrates. Among the techniques for growing bulk crystals that we have briefly discussed are the Czochralski and Bridgman methods. Epitaxial techniques for growing two-dimensional samples introduced in this chapter include chemical vapor deposition, molecular beam epitaxy, and liquid phase epitaxy. Self-organized two-dimensional lattices of quantum dots can also be grown with epitaxial techniques.

Keywords

Molecular Beam Epitaxy GaAs Substrate Liquid Phase Epitaxy Growth Technique Bulk Single Crystal 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Chapter 1

  1. 1.1
    J.I. Pankove, T.D. Moustakas (eds.): Gallium Nitride I, Semiconductors and Semimetals, Vol. 50 (Academic Press, San Diego 1998) S. Nakamura, G. Fasol: The Blue Laser Diode. GaN Based Light Emitters and Lasers (Springer, Berlin, Heidelberg 1997)Google Scholar
  2. 1.2
    L. Gao, Y.Y. Xue, F. Chen, Q. Xiong, R.L. Meng, D. Ramirez, C.W. Chu, J.H. Eggert, H.K. Mao: Superconductuvity up to 164 in HgBa2Cam−1CumO2m+2−δ (m = 1, 2, 3), under pressure. Phys. Rev. B50, 4260–4263 (1994)CrossRefGoogle Scholar
  3. 1.3
    R. Saito, G. Dresselhaus and M.S. Dresselhaus: Physical Properties of Carbon Nanotubes (Imperial College Press, London 1998)CrossRefGoogle Scholar
  4. 1.4
    J. Shinan, Z. Vardeny and Z. Kapati (ed.): Optical and Electronic Properties of Fullerenes and Fullerene-Band Materials (Marcel Dekker, New York, 1999)Google Scholar
  5. 1.5
    C.N.R. Rao and B. Raveau (ed.): Colossal Magnetoresistance, Charge Ordering and Related Properties of Manganese Oxides (World Scientific, Singapore, 1998)Google Scholar
  6. 1.6
    T. Ruf, R.W. Henn, M. Asen-Palmer, E. Gmelin, M. Cardona, H.-J. Pohl, G.G. Devyatych, P.G. Sennikov: Thermal conductivity of isotopically enriched silicon. Solid State Commun. 115, 243 (2000)CrossRefGoogle Scholar
  7. 1.7
    J. Czochralski: A new method for measuring the crystallization velocity of metals (in German). Z. Phys. Chem. 92, 219–221 (1918)Google Scholar
  8. 1.8
    O. Madelung, M. Schulz, H. Weiss (eds.): Landolt-Börnstein, Series III, Vol. 17c (Semiconductors) (Springer, Berlin, Heidelberg 1984) p. 29. This series contains comprehensive references on the growth techniques and properties of individual semiconductors up to 1984Google Scholar
  9. 1.9
    W.C. Dash: Growth of silicon crystals free of dislocations. J. Appl. Phys. 30, 459 (1959)CrossRefGoogle Scholar
  10. 1.10
    C.T. Foxon, B.A. Joyce: Growth of thin films and heterostructures of III–V compounds by molecular beam epitaxy, in Growth and Characterization of Semiconductors ed. by R.A. Stradling, P.C. Klipstein (Hilger, Bristol 1990) p. 35Google Scholar
  11. 1.11
    S. Nakamura and G. Fasol: The Blue Laser Diode: GaN Based Light Emitters and Lasers (Springer-Verlag, Berlin, 1997) p. 36–37CrossRefGoogle Scholar
  12. 1.12
    I.N. Stranski and L. Krastanow: Sitzungsberichte d. Akad. d. Wissenschaften in Wien, Abt. 11B, Band 146, 797 (1937)Google Scholar
  13. 1.13
    D.W. Pashley: The Basics of Epitaxy, in Growth and Characterization of Semiconductors ed. by R.A. Stradling, P.C. Klipstein (Hilger, Bristol 1990) p. 1Google Scholar
  14. 1.14
    F.C. Frank and J.H. van der Merwe: One-dimensional dislocations I. Static theory, Proc. Royal Society A198, 205–216 (1949); One-dimensional dislocations II. Misfitting monolayers and oriented overgrowth, Proc. Royal Society A198, 216–225 (1949); One-dimensional dislocations III. Influence of the second harmonic term in the potential representation on the properties of the model, Proc. Royal Society A200, 125–134 (1949)CrossRefGoogle Scholar
  15. 1.15
    See, for example, D. Bimberg, M. Grundmann, and N.N. Lebentsov: Growth, Spectroscopy, and Laser Application of Self-ordered III–V Quantum Dots. Bulletin of the Materials Research Society, 23, 31 (1998)CrossRefGoogle Scholar
  16. 1.16
    J. Bohm, A. Lüdge, W. Schröder: Crystal Growth by Floating Zone Melting, in Handbook of Crystal Growth, Vol. 2 ed. by D.T.H. Hurle (North-Holland, Amsterdam, 1994) p. 213–258Google Scholar

General Reading

  1. Bernard, J.C., M. Sugawara (ed.): Self-Assembled in GaAs/GaAs Quantum Dots. Volume 60 of Semiconductors and Semimetals (Academic Press, New York, 1999)Google Scholar
  2. Bimberg, D., M. Grundmann and N. Ledentsov: Quantum Dot Heterostructures (John Wiley & Son, New York, 1999)Google Scholar
  3. Chernov A.A.: Modern Crystallography III — Crystal Growth, Springer Ser. Solid-State Sci., Vol. 36 (Springer, Berlin, Heidelberg 1984)Google Scholar
  4. Gilman J.J. (ed.): The Art and Science of Growing Crystals (Wiley, New York 1963)Google Scholar
  5. Hermann M.A., H. Sitter: Molecular Beam Epitaxy, 2nd edn., Springer Ser. Mater. Sci., Vol. 7 (Springer, Berlin, Heidelberg 1996)Google Scholar
  6. Kittel C.: Introduction to Solid State Physics, 7th edn. (Wiley, New York 1995)Google Scholar
  7. Laudies R.A.: The Growth of Single Crystals (Prentice-Hall, New York 1970)Google Scholar
  8. Matthews J.W. (ed.): Epitaxial Growth, Pts. a & b (Academic, New York 1975)Google Scholar
  9. Panish M.B., H. Temkin: Gas Source Molecular Beam Epitaxy, Springer Ser. Mater. Sci., Vol. 26 (Springer, Berlin, Heidelberg 1993)Google Scholar
  10. Williams, J.O.: Metal Organic Chemical Vapour Deposition (MOCVD) for the preparation of semiconductor materials and devices, in Growth and Characterization of Semiconductors, ed. by R.A. Stradling, P.C. Klipstein (Hilger, Bristol 1990) p. 17Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1996

Authors and Affiliations

  • Peter Y. Yu
    • 1
  • Manuel Cardona
    • 2
  1. 1.Department of PhysicsUniversity of CaliforniaBerkeleyUSA
  2. 2.Max-Planck-Institut für FestkörperforschungStuttgartGermany

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