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Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-k Gate Dielectric Implementation

  • H.-H. Tseng
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 16)

Keywords

Gate Dielectric Gate Oxide Plasma Nitridation Gate Leakage Gate Leakage Current 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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© Springer-Verlag Berlin Heidelberg 2005

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  • H.-H. Tseng

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