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Tseng, HH. (2005). Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-k Gate Dielectric Implementation. In: Huff, H., Gilmer, D. (eds) High Dielectric Constant Materials. Springer Series in Advanced Microelectronics, vol 16. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-26462-0_7
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DOI: https://doi.org/10.1007/3-540-26462-0_7
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