Advertisement

SiO2 Based MOSFETS: Film Growth and Si—SiO2 Interface Properties

  • E.A. Irene
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 16)

Keywords

Root Mean Square Thermal Oxidation Film Growth Interface Property Gate Oxide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 3.1.
    E.A. Irene. In: J.E. Greene (ed.), Critical Reviews in Solid State and Materials Science 14(2), 175 (1988)Google Scholar
  2. 3.2.
    E.A. Irene, Phil. Mag. B 55, 131 (1987)Google Scholar
  3. 3.3.
    M.M. Attala, E. Tannenbaum and E.J. Scheiber, Bell System Tech. J. 38, 749 (1959)Google Scholar
  4. 3.4.
    I. Tamm, Phys. Z. Soviet Union 1, 733 (1932)Google Scholar
  5. 3.5.
    W. Schockley, Phys. Rev. 56, 317 (1939)CrossRefGoogle Scholar
  6. 3.6.
    J.T. Law and C.G.B. Garrett, J. Appl. Phys. 27, 656 (1956)CrossRefGoogle Scholar
  7. 3.7.
    D.R. Palmer and C.E. Davenbough, Bull. Amer. Phys. Soc. 3, 138 (1958)Google Scholar
  8. 3.8.
    C.N. Berglund, IEEE Trans. Electron Dev. ED-1B, 701 (1966)Google Scholar
  9. 3.9.
    R. Castagne and A. Vapaille, Surface Sci. 28, 557 (1971)Google Scholar
  10. 3.10.
    P.V. Gray and D.M. Brown, Appl. Phys. Lett. 8, 31 (1966)CrossRefGoogle Scholar
  11. 3.11.
    E.H. Nicollian and J. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley and Sons, New York (1982)Google Scholar
  12. 3.12.
    J.R. Ligenza and W.G. Spitzer, J. Phys. Chem. Solids 14, 131 (1960)CrossRefGoogle Scholar
  13. 3.13.
    B.E. Deal and A.S. Grove, J. Appl. Phys. 36, 3770 (1965)CrossRefGoogle Scholar
  14. 3.14.
    W.A. Pliskin, IBM J. Res. Dev. 10, 198 (1966)Google Scholar
  15. 3.15.
    P.J. Burkhardt and L.V. Gregor, Trans. Metallurgical Soc. AIME 236, 299 (1966)Google Scholar
  16. 3.16.
    A.G. Revesz, K.H. Zaininger and R.J. Evans, Appl. Phys. Lett. 8, 57 (1966)CrossRefGoogle Scholar
  17. 3.17.
    E.A. Irene and Y.J. van der Meulen, J. Electrochem. Soc. 123, 1380 (1976)Google Scholar
  18. 3.18.
    E.A. Irene and R. Ghez, J. Electrochem. Soc. 124, 1757 (1977)Google Scholar
  19. 3.19.
    W.A. Pliskin and R.P. Gnall, J. Electrochem. Soc. 111, 872 (1964)Google Scholar
  20. 3.20.
    J.R. Ligenza, J. Phys. Chem. 65, 2011 (1961)Google Scholar
  21. 3.21.
    D.E. Aspnes and A.A. Studna, Appl. Optics 14, 220 (1975)Google Scholar
  22. 3.22.
    M.A. Hopper, R.A. Clarke, and L. Young, J. Electrochem. Soc. 122, 1216 (1975)Google Scholar
  23. 3.23.
    E.A. Irene. In: In Situ Real-Time Characterization of Thin Films, O. Auciello and A.R. Krauss (eds.), John Wiley & Sons, New York (2001), pp. 57–104Google Scholar
  24. 3.24.
    E.H. Nicollian, A. Goetzberger, and C.N. Berglund, Appl. Phys. Lett. 15, 174 (1969)CrossRefGoogle Scholar
  25. 3.25.
    E.H. Nicollian, C.N. Berglund, P.F. Schmidt and J.M. Andrews, J. Appl. Phys. 42, 5654 (1971)CrossRefGoogle Scholar
  26. 3.26.
    D.R. Young, E.A. Irene, D.J. DiMaria, R.F. DeKeersmaecher amd H.Z. Massoud, J. Appl. Phys. 50, 6366 (1980)CrossRefGoogle Scholar
  27. 3.27.
    E.A. Irene, J. Electrochem. Soc. 121, 1613 (1974)Google Scholar
  28. 3.28.
    P.H. Robinson and F.P. Heiman, J. Electrochem. Soc. 118, 141 (1971)Google Scholar
  29. 3.29.
    R.S. Ronen and P.H. Robinson, J. Electrochem. Soc. 119, 747 (1972)Google Scholar
  30. 3.30.
    R.J. Kriegler, Y.C. Cheng and D.R. Colton, J. Electrochem. Soc. 119, 388 (1972)Google Scholar
  31. 3.31.
    K. Hirabayshi and J. Iwamura, J. Electrochem. Soc. 120, 1595 (1973)Google Scholar
  32. 3.32.
    R.E. Tressler, J. Stach and D.M. Metz, J. Electrochem. Soc. 124, 607 (1977)Google Scholar
  33. 3.33.
    E.A. Irene and D. Dong, J. Electrochem. Soc. 125, 1146 (1978)Google Scholar
  34. 3.34.
    M.M. Atalla and E. Tannebaum, Bell Syst. Tech. J. 39, 933 (1960)Google Scholar
  35. 3.35.
    F. Leuenberger, J. Appl. Phys. 33, 2911 (1962)CrossRefGoogle Scholar
  36. 3.36.
    A.S. Grove, O. Leitstiko and C.T. Sah, J. Appl. Phys. 35, 2695 (1964)CrossRefGoogle Scholar
  37. 3.37.
    B.E. Deal, A.S. Grove, E.H. Snow and C.T. Sah, J. Electrochem. Soc. 112, 308 (1965).Google Scholar
  38. 3.38.
    B.E. Deal and M. Sklar, J. Electrochem. Soc. 112, 430 (1965)Google Scholar
  39. 3.39.
    C.S. Ho and J. Plummer, J. Electrochem. Soc. 126, 1516 and 1523 (1979)Google Scholar
  40. 3.40.
    A.G. Revesz and R.J. Evans, J. Phys. Chem. Solids 30, 551 (1969)CrossRefGoogle Scholar
  41. 3.41.
    A. Cros, J. Physique 44, 707 (1983)Google Scholar
  42. 3.42.
    A. Franciosi, P. Soukiassian, P. Phillip, S. Chang, A. Wall, A. Raisanenand and N. Trouiller, Phys. Rev. B 35, 910 (1983)CrossRefGoogle Scholar
  43. 3.43.
    M.C. Acensio, E.G. Michel, E.M. Oellig and R. Miranda, Appl. Phys. Lett. 51, 1714 (1987)CrossRefGoogle Scholar
  44. 3.44.
    P.J. Moller and J. He, J. Vac. Sci. Technol. A 21, 996, (1987)CrossRefGoogle Scholar
  45. 3.45.
    G. Abbati, L. Rossi, L. Calliari, L Braicovich, I. Lindau and W.E. Spicer, J. Vac. Sci. Technol. 21, 409 (1982)CrossRefGoogle Scholar
  46. 3.46.
    J.M. de Larios, D.B. Kao, C.R. Helms and B.E. Deal, Appl. Phys. Lett. 54, 715 (1989)CrossRefGoogle Scholar
  47. 3.47.
    W. Kern and D.A. Poutinen, RCA Review 31, 187 (1970)Google Scholar
  48. 3.48.
    B.F. Phillips, D.C. Burkman, W.R. Schmidt and C.A. Petersen, J. Vac. Sci. Technol. A 1, 646 (1983)CrossRefGoogle Scholar
  49. 3.49.
    R.C. Henderson, J. Electrochem. Soc. 119, 772 (1972)Google Scholar
  50. 3.50.
    F.N. Schwettmann, K.L. Chiang and W.A. Brown, 153rd Electrochem. Soc. Meeting, Abs. #276, May 1978Google Scholar
  51. 3.51.
    G. Gould and E.A. Irene, J. Electrochem. Soc. 134, 1031 (1987)Google Scholar
  52. 3.52.
    E.A. Irene, Appl. Phys. Lett. 40, 74 (1982)CrossRefGoogle Scholar
  53. 3.53.
    R.J. Jaccodine and W.A. Schlegel, J. Appl. Phys. 37, 2429 (1966)CrossRefGoogle Scholar
  54. 3.54.
    M.V. Whelan, A.H. Gormans and L.M. Goossens, Appl. Phys. Lett. 10, 262 (1967)CrossRefGoogle Scholar
  55. 3.55.
    E.P. EerNisse, Appl. Phys. Lett. 30, 290 (1977); 35, 8 (1979)CrossRefGoogle Scholar
  56. 3.56.
    E.A. Irene, E. Tierney and J. Angillelo, J. Electrochem. Soc. 129, 2594 (1982)Google Scholar
  57. 3.57.
    E. Kobeda and E.A. Irene, J. Vac. Sci. Technol. B 4, 720 (1986); J. Vac. Sci. Technol. B 5, 15 (1987)CrossRefGoogle Scholar
  58. 3.58.
    E.A. Taft, J. Electrochem. Soc. 125, 968 (1978)Google Scholar
  59. 3.59.
    W.A. Tiller, J. Electrochem. Soc. 127, 619, 625 (1980)Google Scholar
  60. 3.60.
    G. Lucovsky, M.J. Mantini, J.K. Srivastava and E.A. Irene, J. Vac. Sci. Technol. B 5, 530 (1987)CrossRefGoogle Scholar
  61. 3.61.
    E.A. Irene, D. Dong and R.J. Zeto, J. Electrochem. Soc. 127, 396 (1980)Google Scholar
  62. 3.62.
    H.Z. Massoud, J. Plummer and E.A. Irene, J. Electrochem. Soc. 132, 1745 (1985)Google Scholar
  63. 3.63.
    E.A. Irene, H.Z. Massoud and E. Tierney, J. Electrochem. Soc. 133, 1253 (1986)Google Scholar
  64. 3.64.
    J.J. Wortman and R.A. Evans, J. Appl. Phys. 36, 153 (1965)CrossRefGoogle Scholar
  65. 3.65.
    W.A. Brantley, J. Appl. Phys. 44, 534 (1973)CrossRefGoogle Scholar
  66. 3.66.
    E.A. Lewis and E.A. Irene, J. Electrochem. Soc. 134, 2332 (1987)Google Scholar
  67. 3.67.
    K. Ueda and M. Inoue, Surf. Sci. 161, L578 (1985)Google Scholar
  68. 3.68.
    R. Oren and S.K. Ghandi, J. Appl. Phys. 42, 752 (1971)CrossRefGoogle Scholar
  69. 3.69.
    S.A. Schafer and S.A. Lyon, J. Vac. Sci. Technol. 19, 494 (1981); S.A. Schafer and S.A. Lyon, J. Vac. Sci. Technol. 21, 422 (1982)CrossRefGoogle Scholar
  70. 3.70.
    I.W. Boyd, Appl. Phys. Lett. 42, 728 (1983); I.W. Boyd. In: Surface Studies with Lasers, F.R. Aussenberg, A. Leitner and M.E. Lippitech (eds.), Springer-Verlag, New York (1983), p. 193CrossRefGoogle Scholar
  71. 3.71.
    E.M. Young and W.A. Tiller, Appl. Phys. Lett. 42, 63 (1983); E.M. Young and W.A. Tiller, Appl. Phys. Lett. 50, 80 (1987)CrossRefGoogle Scholar
  72. 3.72.
    E.A. Irene and E.A. Lewis, Appl. Phys. Lett. 51, 767 (1987)CrossRefGoogle Scholar
  73. 3.73.
    L.M. Chanin, A.V. Phelps and M.A. Biondi, Phys. Rev. 128, 219 (1962)CrossRefGoogle Scholar
  74. 3.74.
    R. Ghez and Y.J. van der Meulen, J. Electrochem. Soc. 119, 1100 (1972)Google Scholar
  75. 3.75.
    H. Yao, J.A. Woollam and S.A. Alterovitz, Appl. Phys. Lett. 62, 3324 (1993)CrossRefGoogle Scholar
  76. 3.76.
    R. Williams and A.M. Goodman, Appl. Phys. Lett. 25, 531 (1974)CrossRefGoogle Scholar
  77. 3.77.
    T.W. Sigmon, W.K. Chu, E. Lugujjo and J.W. Mayer, Appl. Phys. Lett. 24, 105 (1974)CrossRefGoogle Scholar
  78. 3.78.
    J. Derrien and M. Commandre, Surface Science 118, 32 (1982)CrossRefGoogle Scholar
  79. 3.79.
    S.I. Raider and R. Flitsch, J. Vac. Sci. Technol. 13, 58 (1976)CrossRefGoogle Scholar
  80. 3.80.
    C.R. Helms, J. Vac. Sci. Technol. 16, 608 (1979)CrossRefGoogle Scholar
  81. 3.81.
    F.J. Grunthaner, P.J. Grunthaner, R.P. Varquez, B.F. Lewis, J. Maserjian and A. Madhukar, J. Vac. Sci. Technol. 16, 1443 (1979)CrossRefGoogle Scholar
  82. 3.82.
    H. Ibach, H.D. Bruchmann and H. Wagner, Appl. Phys. A 29, 113 (1982)CrossRefGoogle Scholar
  83. 3.83.
    P. Chiaradia and S. Nannarone, Surface Science 54, 547 (1976)CrossRefGoogle Scholar
  84. 3.84.
    H.Z. Massoud, J. Plummer and E.A. Irene, J. Electrochem. Soc. 132, 1745 (1985)Google Scholar
  85. 3.85.
    E.A. Irene, J. Electrochem. Soc. 125, 1708 (1978)Google Scholar
  86. 3.86.
    F.J. Grunthaner and P.J. Grunthaner, Chemical and Electronic Structure of the SiO2/Si Interface, Materials Science Reports 1, 65 (1987)CrossRefGoogle Scholar
  87. 3.87.
    W.A. Tiller, J. Electrochem. Soc. 128, 689 (1981)Google Scholar
  88. 3.88.
    F. Herman, I.P. Batra and R.V. Kasowski. In: The Physics of SiO2and Its Interfaces, S.T. Pantelides (ed.), Pergamon, N.Y. (1979), p. 333Google Scholar
  89. 3.89.
    B. Agius, S. Rigo, F. Rocket, M. Froment, C. Maillot, H. Roulet and G. Dufour, Appl. Phys. Lett. 44, 48 (1984)CrossRefGoogle Scholar
  90. 3.90.
    F. Rochet, B. Agius and S. Rigo, J. Electrochem. Soc. 131, 914 (1984)Google Scholar
  91. 3.91.
    V.A. Yakovlev, Q. Liu and E.A. Irene, J. Vac. Sci. Technol. A 10, 427 (1992)CrossRefGoogle Scholar
  92. 3.92.
    E.A. Taft and L. Cordes, J. Electrochem. Soc. 126, 131 (1979)Google Scholar
  93. 3.93.
    A. Kalnitsky, S.P. Tay, J.P. Ellul, S. Chongsawangvirod, J.W. Andrews, and E.A. Irene, J. Electrochem. Soc. 137, 234 (1990)Google Scholar
  94. 3.94.
    S. Chongsawangvirod, E.A. Irene, A. Kalnitsky, S.P. Tay, and J.P. Ellul, J. Electrochem. Soc. 137, 3536 (1990)Google Scholar
  95. 3.95.
    D.F. Mitchell, K.B. Clark, J.A. Bardwell, W.N. Lennard, G.R. Massoumi and L.V. Mitchell, Surface and Interface Analysis 21, 44 (1994)CrossRefGoogle Scholar
  96. 3.96.
    K.H. Gundlach, Solid State Electron 9, 949 (1996)CrossRefGoogle Scholar
  97. 3.97.
    M.E. Alferieff and C.B. Duke, J. Chem. Phys. 46, 938 (1967)CrossRefGoogle Scholar
  98. 3.98.
    J. Maserjian. In: The Physics and Chemistry of SiO2and Si-SiO2Interface, C.R. Helms and B.E. Deal (eds.), Plenum, New York (1988), p. 505Google Scholar
  99. 3.99.
    S. Zafar, Q. Liu and E.A. Irene, J. Vac. Sci. Technol. A 13(1), 47 (1995); S. Zafar, K.C. Conrad, Q. Liu, E.A. Irene, G. Hames, R. Kuehn and J.J. Wortman, Appl. Phys. Lett. 67, 1031 (1995)CrossRefGoogle Scholar
  100. 3.100.
    K.J. Hebert, S. Zafar, E.A. Irene, R Kuehn, T.E. McCarthy and E.K. Demirlioglu, Appl. Phys. Lett. 68, 266 (1996)CrossRefGoogle Scholar
  101. 3.101.
    K.J. Hebert, T. Labayen and E.A. Irene. In: Physics and Chemistry of SiO2and the Si-SiO2Interface III, H.Z. Massoud, C.R. Helms and E.H. Poindexter (eds.), The Electrochemical Soc. Inc., New Jersey, USA (1996), p. 81Google Scholar
  102. 3.102.
    E.A. Irene, Solid State Electronics 45, 1207 (2001)CrossRefGoogle Scholar
  103. 3.103.
    Y. Wang and E.A. Irene, J. Vac. Sci. Technol. B 18(1), 279, (2000)CrossRefGoogle Scholar
  104. 3.104.
    L. Spanos and E.A. Irene, J. Vac. Sci. Technol. A 12(5), 2646 (1994)CrossRefGoogle Scholar
  105. 3.105.
    L. Spanos, Q. Liu, T. Zettler, B. Hornung, J.J. Wortman and E.A. Irene, J. Vac. Sci. Technol. A 12(5), 2653, (1994)CrossRefGoogle Scholar
  106. 3.106.
    Q. Liu, L. Spanos, C. Zhao and E.A. Irene, J. Vac. Sci. Technol. A 13, 1977 (1995)CrossRefGoogle Scholar
  107. 3.107.
    C. Zhao, P.R. Lefebvre and E.A. Irene, Thin Solid Films 313–314, 286 (1998)CrossRefGoogle Scholar
  108. 3.108.
    L. Lai and E.A. Irene, J. Appl. Phys. 86(3), 1729 (1999)CrossRefGoogle Scholar
  109. 3.109.
    L. Lai, K.J. Hebert and E.A. Irene, J. Vac. Sci. Technol. B 17, 53 (1999)CrossRefGoogle Scholar
  110. 3.110.
    L. Lai and E.A. Irene, J. Vac. Sci. Technol. B 17, 33 (1999)CrossRefGoogle Scholar
  111. 3.111.
    K.J. Hubbard and D.G. Schlom, J. Mater. Res. 11, 2757 (1996)Google Scholar
  112. 3.112.
    Y. Gao, A.H. Mueller, E.A. Irene, O. Auciello, A. Krauss and J.A. Schultz, J. Vac. Sci. Technol. A 17, 1880 (1999)CrossRefGoogle Scholar
  113. 3.113.
    Y.M. Sun, J. Lozano, H. Ho, H.J. Park, S. Veldman and J.M. White, Appl. Surface Sci. 161, 115 (2000)CrossRefGoogle Scholar
  114. 3.114.
    R.A. McKee, F.J. Walker and M.F Chisholm, Phys. Rev. Lett. 81, 3014 (1998)CrossRefGoogle Scholar
  115. 3.115.
    A.H. Mueller, N.A. Suvorova, E.A. Irene, O. Auciello and J.A. Schultz, Appl. Phys. Lett. 80, 3796 (2002)CrossRefGoogle Scholar
  116. 3.116.
    A.H. Mueller, N.A. Suvorova and E.A. Irene, Appl. Phys. Lett. 80, 3596 (2002)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2005

Authors and Affiliations

  • E.A. Irene

There are no affiliations available

Personalised recommendations