High-k Gate Dielectric Deposition Technologies

  • J.P. Chang
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 16)


Atomic Layer Deposition Equivalent Oxide Thickness Atomic Layer Deposition Process Interfacial Layer Thickness Atomic Layer Deposition Cycle 


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  1. 13.1.
    J.P. Chang, J. Eng Jr., J. Sapjeta, R.L. Opila, P. Cox, and P. Pianetta, Cleaning Technology in Semiconductor Device Manufacturing, Proceedings of the Sixth International Symposium, Electrochemical Society Proceedings, 99-36,129, xiii+614 (2000)Google Scholar
  2. 13.2.
    A. Delabie, M. Caymax, B. Brijs, E. Cartier, T. Conard, L. Geenen, W. Vandervorst, S. De Gendt, M.M. Heyns, P. Bajolet, J.W. Maes, and W. Tsai, Fourth International Conference on Microelectronics and Interfaces, Santa Clara, California, March 2003Google Scholar
  3. 13.3.
    Y. Wu, G. Lucovsky, Y. M. Lee, IEEE Transactions on Electron Devices 47(7), 1361 (2000)CrossRefGoogle Scholar
  4. 13.4.
    Y.-C. Yeo, P. Ranade, T.-J. King, C. Hu, IEEE Electron Device Letters 23(6), 342 (2002)CrossRefGoogle Scholar
  5. 13.5.
    L. Sha, B.-O. Cho, and J. P. Chang, J. Vac. Sci. Technol. A 20(5), 1525–1531 (2002)CrossRefGoogle Scholar
  6. 13.6.
    L. Sha and J.P. Chang, J. Vac. Sci. Technol. A 21(6), 1915–1922 (2003)CrossRefGoogle Scholar
  7. 13.7.
    L. Sha and J.P. Chang, J. Vac. Sci. Technol. B 21(6), 2420–2427 (2003)CrossRefGoogle Scholar
  8. 13.8.
    L. Sha and J.P. Chang, J. Vac. Sci. Technol. A 22(1), 88–95 (2004)CrossRefGoogle Scholar
  9. 13.9.
    K. Kukli, M. Ritala, R. Matero, M. Leskela, Journal of Crystal Growth 212(3–4), 459 (2000)CrossRefGoogle Scholar
  10. 13.10.
    J.P. Chang and Y.-S. Lin, J. Appl. Phys. 90(6), 2964 (2001)CrossRefGoogle Scholar
  11. 13.11.
    T. Suntola, Appl. Surf. Sci. 100–101, 391 (1996)CrossRefGoogle Scholar
  12. 13.12.
    H. Kattelus, M. Ylilammi, J. Saarilahti, J. Antson, and S. Lindfors, Thin Solid Films 225(1–2), 296 (1993)CrossRefGoogle Scholar
  13. 13.13.
    M. Leskela, Ritala, M., Thin Solid Films 409(1), 138 (2002)CrossRefGoogle Scholar
  14. 13.14.
    O. Sneh, R.B. Clark-Phelps, A.R. Londergan, J. Winkler, T.E. Seidel, Thin Solid Films 402(1–2), 248 (2002)CrossRefGoogle Scholar
  15. 13.15.
    M. Ritala and M. Leskela, Handbook of Thin Film Materials, edited by H.S. Nalwa, Vol. 1, Academic Press (2002), Chap. 2: Atomic Layer DepositionGoogle Scholar
  16. 13.16.
    J.W. Klaus, O. Sneh, S.M. George, Science 278, 1934 (1997)CrossRefPubMedGoogle Scholar
  17. 13.17.
    R.G. Gordon, J. Becker, D. Hausmann, and S. Suh, Mater Res Soc, Gate Stack and Silicide Issues in Silicon Processing II Symposium Proceedings 670, K.2.4.1 (2002)Google Scholar
  18. 13.18.
    J.W. Klaus, S.J. Ferro, S.M. George, Thin Solid Films 360(1–2), 145 (2000)CrossRefGoogle Scholar
  19. 13.19.
    R. Solanki, B. Pathangey, Electrochemical and Solid-State Letters 3(10), 479 (2000)CrossRefGoogle Scholar
  20. 13.20.
    J.P. Chang, Y-S. Lin, S. Berger, A. Kepten, R. Bloom, and S. Levy, J. Vac. Sci. Technol. B 19(6), 2137 (2001)CrossRefGoogle Scholar
  21. 13.21.
    J.P. Chang and Y-S. Lin, Appl. Phys. Lett. 79(22), 3666–3668 (2001)CrossRefGoogle Scholar
  22. 13.22.
    J.W. Klaus, S.J. Ferro, S.M. George, J. Electrochemical Soc. 147(3), 1175 (2000)CrossRefGoogle Scholar
  23. 13.23.
    M. Juppo, M. Ritala, M. Leskela, J. Electrochemical Soc. 147(9), 3377 (2000)CrossRefGoogle Scholar
  24. 13.24.
    P. Alen, M. Juppo, M. Ritala, T. Sajavaara, J. Keinonen, M. Leskela, J. Electrochemical Soc. 148(10), G566 (2001)CrossRefGoogle Scholar
  25. 13.25.
    R.L. Puurunen, A. Root, P. Sarv, S. Haukka, E.I. Iiskola, M. Lindblad, A.O.I. Krause, Appl. Surf. Sci. 165(2–3), 193 (2000)CrossRefGoogle Scholar
  26. 13.26.
    H. Akazawa, Journal of Crystal Growth 173(3–4), 343 (1997)CrossRefGoogle Scholar
  27. 13.27.
    L.P. Colletti, J.L. Stickney, J. Electrochemical Soc. 145(10), 3594 (1998)Google Scholar
  28. 13.28.
    B. Sang, A. Yamada, M. Konagai, Jpn. J. Appl. Phys. 37(2B), Part 2 (Letters), L206 (1998)CrossRefGoogle Scholar
  29. 13.29.
    M. Vehkamaki, T. Hatanpaa, T. Hanninen, H. Ritala, M. Leskela, Electrochemical and Solid-State Letters 2(10), 504 (1999)CrossRefGoogle Scholar
  30. 13.30.
    Z. Wang, S. Oda, J. Electrochemical Soc. 147(12), 4615 (2000)CrossRefGoogle Scholar
  31. 13.31.
    Z. Wang, S. Oda, M. Karlsteen, U. Sodervall, M. Willander, Jpn. J. Appl. Phys., Part 1 39(7A), 4164 (2000)CrossRefGoogle Scholar
  32. 13.32.
    H. Goto, K. Shitahara, and S. Yokoyama, Appl. Phys. Lett. 68(23), 3257 (1996)CrossRefGoogle Scholar
  33. 13.33.
    D.-G. Park, H.-J. Cho, K.-Y. Lim, C. Lam, I.-S. Yeo, J.-S. Roh, J.W. Park, J. Appl. Phys. 89 (11, pt.1–2), 6275 (2001)CrossRefGoogle Scholar
  34. 13.34.
    J.P. Chang and Y.-S. Lin, Appl. Phys. Lett. 79(23), 3824, (2001)CrossRefGoogle Scholar
  35. 13.35.
    J. Aarik, A. Aidla, H. Mandar, T. Uustare, K. Kukli, M. Schuisky, Appl. Surf. Sci. 173(1–2), 15 (2001)CrossRefGoogle Scholar
  36. 13.36.
    K. Kukli, A. Aidla, J. Aarik, M. Schuisky, A. Hartsa, M. Rotala, M. Leskela, Langmuir 16(21), 8122 (2000)CrossRefGoogle Scholar
  37. 13.37.
    K. Kukli, M. Ritala, M. Leskela, T. Sajavaara, J. Keinonen, D. Gilmer, S. Bagchi, and L. Prabhu, J. Non-Crystalline Solids 303, 35 (2002)CrossRefGoogle Scholar
  38. 13.38.
    Y. Senzaki, G.B. Alers, A.K. Hochberg, D.A. Roberts, J.T. Norman, R.M. Fleming, and H. Krautter, Electrochemical and Solid State Letters 3(9), 435 (2000)CrossRefGoogle Scholar
  39. 13.39.
    M. Kiyatoshi, S. Yamaxaki, J. Nakahira, K. Egushi, K. Heida, H. Yamamoto, T. Umehara, K. Hasebe, T. Asano, K. Nakao, T. Arikado, and K. Okumura, The ninth international symposium on Semiconductor Manufacturing, IVb-6, 110 (2000)CrossRefGoogle Scholar
  40. 13.40.
    K. Kukli, K. Forsgren, J. Aarik, T. Uustare, A. Aidla, A. Niskanen, M. Ritala, M. Leskela, A. Harsta, J. Crystal Growth 231(1–2), 262 (2001)CrossRefGoogle Scholar
  41. 13.41.
    M. Schuisky, K. Kukli, J. Aarik, J. Lu, A. Harsta, J. Crystal Growth 235 (1–4), 293 (2002)CrossRefGoogle Scholar
  42. 13.42.
    K.H. Hwang. S.J. Choi, J.D. Lee, Y.S. You, Y.K. Kim, H.S. Kim, C.L. Song, S.I. Lee, ALD 2001 topical conference, AVS, Monterey, CA, (2001)Google Scholar
  43. 13.43.
    J. Aarik, A. Aidla, H. Mandar, T. Uustare, V. Sammelselg, Thin Solid Films 408(1–2), 97 (2002)CrossRefGoogle Scholar
  44. 13.44.
    K. Kukli, M. Ritala, T. Uustare, J. Aarik, K. Forsgren, T. Sajavaara, M. Leskela, A. Harsta, Thin Solid Films 410(1–2), 53 (2002)CrossRefGoogle Scholar
  45. 13.45.
    A.W. Ott, K.C. McCarley, J.W. Klaus, J.D. Way, S.M. George, Applied Surface Science 107, 128 (1996)CrossRefGoogle Scholar
  46. 13.46.
    J.W. Klaus, S.M. George, Surf. Sci. 447(1–3), 81 (2000)CrossRefGoogle Scholar
  47. 13.47.
    J.W. Klaus, S.J. Ferro, S.M. George, Thin Solid Films 360(1–2), 145 (2000)CrossRefGoogle Scholar
  48. 13.48.
    K. Kukli, K. Forsgren, M. Ritala, M. Leskela, J. Aarik, A. Harsta, J. Electrochemical Soc. 148(12), F227 (2001)CrossRefGoogle Scholar
  49. 13.49.
    P. Tagstrom, P. Martensson, U. Jannson, J.O. Carlsson, J. Electrochem. Soc. 146, 3139 (1999)CrossRefGoogle Scholar
  50. 13.50.
    C.H. Liu, M. Yokoyama, Y.K. Su, N.C. Lee, Jpn J of Appl Phys, Part 1 (Regular Papers, Short Notes & Review Papers) 35(5A), 2749 (1996)CrossRefGoogle Scholar
  51. 13.51.
    M. Innocenti, G. Pezzatini, F. Forni, M.L. Foresti, J. Electrochemical Soc. 148(5), C357 (2001)CrossRefGoogle Scholar
  52. 13.52.
    M.L. Foresti, G. Pezzatini, M. Cavallini, G. Aloisi, M. Innocenti, R. Guidelli, J. Phys. Chem. B 102(38), 7413 (1998)CrossRefGoogle Scholar
  53. 13.53.
    A. Rahtu, T. Alaranta, M. Ritala, Langmuir 17(21), 6506 (2001)CrossRefGoogle Scholar
  54. 13.54.
    A. Paranjpe, S. Gopinath, T. Omstead, R. Bubber, J Electrochemical Soc 14 8(9), G465 (2001)CrossRefGoogle Scholar
  55. 13.55.
    M.A. Cameron and S.M. George, Thin Solid Films 348, 90 (1999)CrossRefGoogle Scholar
  56. 13.56.
    J.P. Chang, Y. Lin, and K. Chu, J. Vac. Sci. Technol. B 19(5), 1782–1787 (2001)CrossRefGoogle Scholar
  57. 13.57.
    M. Ritala, K. Kukli, A. Rahtu, P. Raisanen, M. Leskela, T. Sajavaara, J. Keinonen, Science 288(5464), 319 (2000)Google Scholar
  58. 13.58.
    R. Gordon, J. Becker, D. Hausmann, and S. Suh, Chem. Mater. 13, 2463 (2001)CrossRefGoogle Scholar
  59. 13.59.
    D. Hausmann, E. Kim, J. Becker, and R. Gordon, Chem. Mater. 2002 (in press)Google Scholar
  60. 13.60.
    M. Suzuki, T. Magara, T. Takahashi, and H. Shinriki, ALD 2002 Topical Conference, Seoul, Korea (2002), p. 5Google Scholar
  61. 13.61.
    M. Nieminen, M. Putkonen, J. Niinisto, Appl. Surf. Sci. 174(2), 155 (2001)CrossRefGoogle Scholar
  62. 13.62.
    Y. Widjaja, C.B. Musgrave, Appl. Phys. Lett. 80(18), 3304 (2002)CrossRefGoogle Scholar
  63. 13.63.
    M.K. Gobbert, V. Prasad, T.S. Cale, Thin Solid Films 410(1–2), 129 (2002)CrossRefGoogle Scholar
  64. 13.64.
    S. Ramanathan, D.A. Muller, G.D. Wilk, C.M. Park, and P.C. McIntyre, Appl. Phys. Lett. 79(20), 3311 (2001)CrossRefGoogle Scholar
  65. 13.65.
    T. Gustafsson, H.C. Lu, B.W. Busch, W.H. Schulte, E. Garfunkel, Nuclear Instruments & Methods in Physics Research, Section B 183(1–2), 146 (2001)Google Scholar
  66. 13.66.
    R.P. Pezzi, C. Krug, E.B.O. da Rosa, J. Morais, L. Miotti, I.J.R. Baumvol, Nuclear Instruments & Methods in Physics Research, Section B 190, 510 (2002)Google Scholar
  67. 13.67.
    J. Chappell, Electronic News, July (2002)Google Scholar
  68. 13.68.
    H. Siimon, J. Aarik, J. Phys. D (Applied Physics) 30(12), 1725 (1997)CrossRefGoogle Scholar
  69. 13.69.
    H. Siimon, J. Aarik, J. de Physique IV, Colloque C5, supplement au Journal de Physique II, 5, 245 (1995)Google Scholar
  70. 13.70.
    B. Guillaumot, X. Garros, F. Lime, K. Oshima, B. Tavel, J.A. Chroboczek, P. Masson, R. Truche, A.M. Papon, F. Martin, J.F. Damlencourt, S. Maitrejean, M. Rivoire, C. Leroux, S. Cristoloveanu, G. Ghibaudo, J.L. Autran, T. Skotnicki, S. Deleonibus, IEDM Technical Digest, 355 (2002)Google Scholar
  71. 13.71.
    C.M. Perkins, B.B. Triplett, P.C. McIntyre, K.C. Saraswat, S. Haukka, and M. Tuominen, Appl. Phys. Lett. 78(16), 2357 (2001)CrossRefGoogle Scholar
  72. 13.72.
    E.P. Gusev, E. Cartier, D.A. Buchanan, M. Gribelyuk, M. Copel, H. Okorn-Schmidt, and C. D'Emic, Microelectronic Engineering 59, 341 (2001)CrossRefGoogle Scholar
  73. 13.73.
    Z. Xu, M. Houssa, S. de Gendt, and M. Heyns, Appl. Phys. Lett. 80(11), 1975 (2002)CrossRefGoogle Scholar
  74. 13.74.
    M. Stromme, G.A. Niklasson, M. Ritala, M. Leskela, K. Kukli, J. Appl. Phys. 90(9), 4532 (2001)CrossRefGoogle Scholar
  75. 13.75.
    R.B. van Dover, D.V. Lang, M.L. Green, L. Manchanda, J. Vac. Sci. Technol. A 19(6), 2779 (2001)CrossRefGoogle Scholar
  76. 13.76.
    K.F. Jensen, Chemical Vapor Deposition, Academic Press (1993) Chap. 2: Fundamentals of Chemical Vapor DepositionGoogle Scholar
  77. 13.77.
    C. Chaneliere, J.L. Autran, R.A.B. Devine, and B. Balland, Materials Science and Engineering R22, 269 (1998)Google Scholar
  78. 13.78.
    H.W. Chen, D. Landheer, X. Wu, S. Moisa, G.I. Sproule, T.S. Chao, and T.Y. Huang, J. Vac. Sci. Technol. A 20(3), 1145 (2002)CrossRefGoogle Scholar
  79. 13.79.
    B.C. Hendrix, A.S. Borovik, C. Xu, J.F. Roeder, T.H. Baum, M.J. Bevan, M.R. Visokay, J.J. Chambers, A.L.P. Rotondaro, H. Bu, and L. Colombo, Appl. Phys. Lett. 80(13), 2362 (2002)CrossRefGoogle Scholar
  80. 13.80.
    Y. Ohshita, A. Ogura, A. Hoshino, S. Hirro, H. Machida, J. Crystal Growth 233, 292 (2001)CrossRefGoogle Scholar
  81. 13.81.
    D.G. Colombo, D.C. Gilmer, V.G. Young Jr., S.A. Campbell, and W.L. Gladfelter, Chem. Vap. Deposition 4(6), 220 (1998)CrossRefGoogle Scholar
  82. 13.82.
    R.C. Smith, T. Ma, N. Hoilien, L.Y. Tsung, M.J. Bevan, L. Colombo, J. Roberts, S.A. Campbell, and W.L. Gladfelter, Adv. Mater. Opt. Electron 10, 105 (2000)CrossRefGoogle Scholar
  83. 13.83.
    R.I. Bickley, R.K.M. Jaynaty, J.A. Navio, C. Real, and M. Macias, Surf. Sci. 251/252, 1052 (1991)CrossRefGoogle Scholar
  84. 13.84.
    D.C. Gilmer, D.G. Colombo, C.J. Taylor, J. Roberts, G. Haugstad, S.A. Campbell, H.S. Kim, G.D. Wilk, M.A. Gribelyuk, W.L. Gladfelter, Chem. Vap. Deposition 4, 9 (1998)CrossRefGoogle Scholar
  85. 13.85.
    D.-O. Lee, P. Roman, C.-T. Wu, W. Mahoney, M. Horn, P. Mumbauer, M. Brubaker, R. Grant, J. Ruzyllo, Microelectronic Engineering 59(1–4), 405 (2001)CrossRefGoogle Scholar
  86. 13.86.
    K.F. Jensen and W. Kern, Thin Film Processes II, edited by J. Vossen and W. Kern, Academic Press, 1991, p. 283Google Scholar
  87. 13.87.
    B. He, N. Hoilien, R. Smith, T. Ma, C. Taylor, I. St. Omer, S.A. Campbell, W.L. Gladfelter, M. Gribelyuk, D. Buchanan, Proceedings of the Thirteenth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.99CH36301), IEEE, 33 viii+224 (1999)Google Scholar
  88. 13.88.
    S.J. Lee, H.F. Luan, W.P. Bai, C.H. Lee, T.S. Jeon, Y. Senzaki, D. Roberts, and D.L. Kwong, International Electronic Devices Meeting, IEEE, 00-31, 2.4.1, (2000)Google Scholar
  89. 13.89.
    S.B. Samavedam, L.B. La, J. Smith, S. Dakshina-Murthy, E. Luckowski, J. Schaeffer, M. Zavala, R. Martin, V. Dhandapani, D. Triyoso, H.H. Tseng, P.J. Tobin, D.C. Gilmer, C. Hobbs, W.J. Taylor, J.M. Grant, R.I. Hegde, J. Mogab, C. Thomas, P. Abramowitz, M. Moosa, J. Conner, J. Jiang, V. Arunachalam, M. Sadd, B-Y. Nguyen and B. White, IEDM Technical Digest, 433 (2002)Google Scholar
  90. 13.90.
    B.K. Park, J. Park, M. Cho, C.S. Hwang, K. Oh, Y. Han and D.Y. Yang, Appl. Phys. Lett. 80(13), (2002), p. 2368CrossRefGoogle Scholar
  91. 13.91.
    H. Kim, S.M. Rossnagel, J. Vac. Sci. Technol. A 20(3), 802 (2002)CrossRefGoogle Scholar
  92. 13.92.
    J.-S. Min, H.-S. Park, S.-W. Kang, Appl. Phys. Lett. 75(11), 1521 (1999)CrossRefGoogle Scholar
  93. 13.93.
    J.-S. Park, H.-S. Park, S.-W. Kang, J. Electrochemical Soc. 149(1), C28 (2002)CrossRefGoogle Scholar
  94. 13.94.
    S.M. Rossnagel, A. Sherman, F. Turner, J. Vac. Sci. Technol. B 18(4), 2016 (2000)CrossRefGoogle Scholar
  95. 13.95.
    J. Koo, Y. Kim, and H. Jeon, Jpn. J. Appl. Phys. 41, Pt. 1 (5A), 3043 (2002)CrossRefGoogle Scholar
  96. 13.96.
    C.W. Jrong, B. Lee, S.K. Joo, Mater. Sci. and Eng. C 16, 59 (2001)CrossRefGoogle Scholar
  97. 13.97.
    S.X. Lao and J.P Chang, 5th International Conference on Microelectronics and Interfaces, Santa Clara, CA, March 2004, p. 89Google Scholar
  98. 13.98.
    T.T. Van and J.P. Chang, Material Research Society, San Francisco, CA, April 2004, pp. E1.5, E1.6Google Scholar
  99. 13.99.
    W.-J. Lee, I.K. You, S.O. Ryu, B.G. Yu, K.I. Cho, S.G. Yoon, C.S. Lee, Jpn. J. Appl. Phys. 40, 6941 (2001)CrossRefGoogle Scholar
  100. 13.100.
    G. Lucovsky, G.N. Rayner, and R.S. Johnson, Microelectronics Reliability 41, 937 (2001)CrossRefGoogle Scholar
  101. 13.101.
    T.D. Abatemarco and G. Parsons, ALD 2002 topical conference, Seoul, Korea (2002), p. 4Google Scholar
  102. 13.102.
    B.O. Cho, S. Lao, and J.P. Chang, J. Vac. Sci. Technol. A 19(6), 2751 (2001)CrossRefGoogle Scholar
  103. 13.103.
    H. Holzschuh and H. Suhr, Appl. Phys. Lett. 59(4), 470 (1991)CrossRefGoogle Scholar
  104. 13.104.
    B.-O. Cho, J.-J. Wang, L. Sha, and J.P. Chang, Appl. Phys. Lett. 80(6), 1052 (2002)CrossRefGoogle Scholar
  105. 13.105.
    B.O. Cho and J.P. Chang, J. Appl. Phys. 92(8), 4238–4244 (2002)CrossRefGoogle Scholar
  106. 13.106.
    H.H. Tseng, J. Veteran, P.J. Tobin, J. Mogab, P.G.Y. Tsui, V. Wang, M. Khare, X.W. Wang, T.P. Ma, C. Hobbs, R. Hegde, M. Hartig, G. Kenig, R. Blumenthal, R. Cotton, V. Kaushik, T. Tamagawa, B.L. Halpern, G.J. Cui, J.J. Schmitt, Materials Science in Semiconductor Processing 3(3), 173 (2000)CrossRefGoogle Scholar
  107. 13.107.
    M.G. Krishna, K.N. Rao, and S. Mohan, Appl. Phys. Lett. 57, 557 (1990)CrossRefGoogle Scholar
  108. 13.108.
    V.V. Klechkovskaya, V.I. Khitrova, S.I. Sagitov, and S.A. Semiletov, Sov. Phys. Crystallogr. 25, 636 (1980)Google Scholar
  109. 13.109.
    F. Jones, J. Vac. Sci. Technol. A 6, 3088 (1988)CrossRefGoogle Scholar
  110. 13.110.
    W.J. Qi et al., Appl. Phys. Lett. 77(11), 1704 (2000)CrossRefGoogle Scholar
  111. 13.111.
    T. Kim et al., Appl. Phys. Lett. 76(21), 3043 (2000)CrossRefGoogle Scholar
  112. 13.112.
    P. Gao, L. Meng, M. Santos, V. Teixeira, and M. Andritschky, Vacuum 56, 143 (2000)CrossRefGoogle Scholar
  113. 13.113.
    D. Niu, R.W. Ashcraft, G.N. Parsons, Appl. Phys. Lett. 80(19), 3575 (2002)CrossRefGoogle Scholar
  114. 13.114.
    E. Disbiens, R. Dolbec, and M.A. Khakani, J. Vac. Sci. Technol. A 20(3), 1157 (2002)CrossRefGoogle Scholar
  115. 13.115.
    K. Chu, J.P. Chang, M.L. Steigerwald, R.M. Fleming, R. L. Opila, D. V. Lang, R.B. Van Dover, and C.D.W. Jones, J. Appl. Phys. 91(1), 308–316 (2002)CrossRefGoogle Scholar
  116. 13.116.
    G.D. Wilk and R.M. Wallace, Appl. Phys. Lett. 76(1), 112 (2000)CrossRefGoogle Scholar
  117. 13.117.
    A. Callegari, E. Cartier, M. Gribelyuk, H.F. Okorn-Schmidt, and T. Zabel, J. Appl. Phys. 90(12), 6466 (2001)CrossRefGoogle Scholar
  118. 13.118.
    M.R. Visokay, J.J. Chambers, A.L.P. Rotondaro, A. Shanware, and L. Colombo, Appl. Phys. Lett. 80(17), 3183 (2002)CrossRefGoogle Scholar
  119. 13.119.
    L. Manchanda, M.L. Green, R.B. van Dover, M.D. Morris, A. Kerber, Y. Hu, J.-P. Han, P.J. Silverman, T.W. Sorsch, G. Weber, V. Donnelly, K. Pelhos, F. Klemens, N.A. Ciampa, A. Kornblit, Y.O. Kim, J.E. Bower, D. Barr, E. Ferry, D. Jacobson, J. Eng, B. Busch, H. Schulte, International Electron Devices Meeting, IEDM (Cat. No.00CH37138), 23 (2000)Google Scholar
  120. 13.120.
    R.J. Cava and J.J. Krajewski, J. Appl. Phys. 83(3), 1613 (1998)CrossRefGoogle Scholar
  121. 13.121.
    K.M. Ghanashy, K. Narashima, S. Mchan, Thin Solid Films 193, 690 (1990)CrossRefGoogle Scholar
  122. 13.122.
    E.E. Khawaja, F. Bouamrane, A.B. Hallak, M.A. Daous, and M.A. Salim, J. Vac. Sci. Technol. A 11, 580 (1993)CrossRefGoogle Scholar
  123. 13.123.
    J. Kwo, M. Hong, A.R. Kortan, K.L. Queeney, Y.J. Chabal, R.L. Opila, D.A. Muller, S.N.G. Chu, B.J. Sapjeta, T.S. Lay, J.P. Mannaerts, T. Boone, H.W. Krautter, J.J. Krajewski, A.M. Sergnt, J.M. Rosamilia, J. Appl. Phys. 89(7), 3920 (2001)CrossRefGoogle Scholar
  124. 13.124.
    D.K. Sarkar, E. Disbiens, and M.A. Khakani, Appl. Phys. Lett. 80(2), 294 (2002)CrossRefGoogle Scholar
  125. 13.125.
    S.W. Nam, J.H. Yoo, H.Y. Kim, S.K. Kang, D.H. Ko, C.W. Yang, H.J. Lee, M.H. Cho, and J.H. Ku, J. Vac. Sci. Technol. A 19(4), 1720 (2001)CrossRefGoogle Scholar
  126. 13.126.
    G.D. Wilk, R M. Wallace, and J.M. Anthony, J. Appl. Phys. 87(1), 484 (2000)CrossRefGoogle Scholar
  127. 13.127.
    W.-J. Qi, R. Nieh, E. Dharmarajan, B.H. Lee, Y. Jeon, L. Kang, K. Onishi, and J.C. Lee, Appl. Phys. Lett. 77(11), 1704 (2000)CrossRefGoogle Scholar
  128. 13.128.
    R. Choi, K. Onishi, C.S. Kang, S. Gopalan, R. Nieh, Y.H. Kim, J.H. Han, S. Krishnan, H. Cho, A. Shahriar, and J.C. Lee, IEDM Technical Digest, 613 (2002)Google Scholar
  129. 13.129.
    M. Shahjahan, N. Takahashi, K. Sawada, and M. Ishida, IEEE International Workshop on Gate Insulator (IWGI), 7.15, 160 (2001)Google Scholar
  130. 13.130.
    L.A. Ragnarsson, S. Guha, M. Copel, E. Cartier, N.A. Bojarczuk, J. Karasinski, Appl. Phys. Lett. 78(26), 4169 (2001)CrossRefGoogle Scholar
  131. 13.131.
    R.A. McKee, F.J. Walker, and M.F. Chisholm, Phys. Rev. Lett. 81, 3014–3017 (1998)CrossRefGoogle Scholar
  132. 13.132.
    S. Guha; N.A. Bojarczuk, V. Narayanan, Appl. Phys. Lett. 80(5), 766 (2002)CrossRefGoogle Scholar
  133. 13.133.
    M. Ishida, K. Sawada, S. Yamaguchim, T. Nakamura, T. Suzaki, Appl. Phys. Lett. 55, 56 (1989)CrossRefGoogle Scholar
  134. 13.134.
    P. Singer, Semiconductor International 24(12), 36 (2001)Google Scholar
  135. 13.135.
    B.S. Meyerson, K.J. Uram, and K.F. LeGoues, Appl. Phys. Lett. 53, 2555 (1998)CrossRefGoogle Scholar
  136. 13.136.
    M. Matsuoka, S. Isotani, J.F.D. Chubaci, S. Miyake, Y. Setsuhara, K. Ogata and N. Kuratani, J Appl Phys 88(6), 3773 (2000)CrossRefGoogle Scholar
  137. 13.137.
    A.S. Kao, G.L. Gorman, J. Appl. Phys. 67, 3826 (1990)CrossRefGoogle Scholar
  138. 13.138.
    S. Miyahe, I. Shimizu, R.R. Manory, T. Mori, and G. Kimmel, Surf. Coatings Technol. 146–147, 237 (2001)CrossRefGoogle Scholar
  139. 13.139.
    M. Yoshitake, K. Takiguchi, Y. Suzuki, and S. Ogawa, J. Vac. Sci. Technol. A 6, 2326 (1988)CrossRefGoogle Scholar
  140. 13.140.
    E. Celik. J. Schwartz, E. Avci, and Y.S. Hascicek, IEEE Transactions on Applied Superconductivity 19, Pt. 2 (2), 1916 (1999)CrossRefGoogle Scholar
  141. 13.141.
    L. Yang and J. Cheng, J. Non-crystalline Solid 112, 422 (1989)Google Scholar
  142. 13.142.
    S. Jana and P.K. Biswas, Materials Letters 30, 53 (1997)CrossRefGoogle Scholar
  143. 13.143.
    R. Corriou, D. Leclercq, P. Lefèrve, P.H. Mutin, A. Vioux, Chem. Mater. 4, 961 (1992)CrossRefGoogle Scholar
  144. 13.144.
    A. Vioux, Chem. Mater. 9, 2292 (1997)CrossRefGoogle Scholar
  145. 13.145.
    R.M. Rignanese, F. Detraux, X. Gonze, and A. Pasquarello, Phys. Rev. B 64(13), 134301 (2001)CrossRefGoogle Scholar
  146. 13.146.
    K. Cho, Computational Materials Science 23(1–4), 43 (2002)CrossRefGoogle Scholar
  147. 13.147.
    R. Puthenkovilakam, E. Carter, and J.P. Chang, accepted for publication in Physical Review B 69(11), March 2004Google Scholar
  148. 13.148.
    V.V. Brodskii, E.A. Rykova, A.A. Bagatur'yants, A.A. Korkin, Computational Materials Science 24(1–2), 278 (2002)CrossRefGoogle Scholar

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© Springer-Verlag Berlin Heidelberg 2005

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  • J.P. Chang

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