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Electronic Structure of Alternative High-k Dielectrics

  • G. Lucovsky
  • J.L. Whitten
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 16)

Keywords

Direct Tunneling Local Atomic Structure Equivalent Oxide Thickness Valence Band State Bonding Arrangement 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 11.1.
    G. Wilk, R.W. Wallace and J.M Anthony, J. Appl. Physics 89, 5243 (2001)CrossRefGoogle Scholar
  2. 11.2.
    G. Lucovsky, in Extended Abstracts of the 6th Workshop on Formation, Characterization, and Reliability of Ultrathin Silicon Oxides, January 26–27, 2001, Atagawa Heights, Japan, p. 5Google Scholar
  3. 11.3.
    D.E. Aspnes and J.B. Theeten, J. Electrochem. Soc. 127, 1359 (1980)Google Scholar
  4. 11.4.
    D.E. Aspnes et al., Phys. Rev. Lett. 43, 1046 (1979)CrossRefGoogle Scholar
  5. 11.5.
    J.W. Keister, J.E. Rowe, J.J. Kolodziej, H. Niimi, H.S. Tao, T.E. Madey and G. Lucovsky, J. Vac. Sci. Technol. A 17, 1250 (1999)Google Scholar
  6. 11.6.
    M.D. Ulrich, J.G. Hong, J.E. Rowe, G. Lucovsky, A.-Y. Chan and T.E. Madey, J. Vac. Sci. Technol. B 21, 1777 (2003)Google Scholar
  7. 11.7.
    G. Lucovsky and J.C. Phillips, Appl. Phys. A — Materials & Processing 78, 453 (2004)Google Scholar
  8. 11.8.
    P. Boolchand, in Insulating and Semiconducting Glasses (World Scientific, Singapore, 2000), p. 191Google Scholar
  9. 11.9.
    P. Boolchand, D.G. Georgiev and M. Micoulaut, J. Optoelectronics and Adv. Mater. 4, 823 (2002)Google Scholar
  10. 11.10.
    G. Lucovsky and J.C. Phillips, J. Vac. Sci. Technol. B 22 (2004) (in press); G. Lucovsky, J.P. Maria and J.C. Phillips, J. Vac. Sci. Technol. B 22 (2004) (in press)Google Scholar
  11. 11.11.
    R. Zallen, The Physics of Amorphous Solids (John Wiley and Sons, New York, 1983), Chap. 2Google Scholar
  12. 11.12.
    F.L. Galeener and G. Lucovsky, Phys. Rev. Lett. 37, 1474 (1976)CrossRefGoogle Scholar
  13. 11.13.
    R.J. Bell and P. Dean, Discuss Faraday Soc 50, 55 (1970); in Amorphous Materials, edited by R.W. Douglas (Wiley-Interscience, London, 1972), p. 443CrossRefGoogle Scholar
  14. 11.14.
    J.C. Phillips, J. Non-Cryst. Solids 34, 153 (1979)CrossRefGoogle Scholar
  15. 11.15.
    J.C. Phillips, J. Non-Cryst. Solids 43, 37 (1981)CrossRefGoogle Scholar
  16. 11.16.
    J.L. Whitten, Y. Zhang, M. Menon, and G. Lucovsky, J. Vac. Sci. Techol. B 20, 1710 (2002)CrossRefGoogle Scholar
  17. 11.17.
    D.L. Griscom in The Physics of SiO2 and Its Interfaces, ed. by S.T. Pantelides (Pergammon Press, New York, 1978), p. 232Google Scholar
  18. 11.18.
    R.L. Mozzi and B.E. Warren, J. Appl. Cryst. 2, 164 (1969)CrossRefGoogle Scholar
  19. 11.19.
    L. Robertson and S. Moss, J. Non-Crystalline Solids 106, 330 (1988)CrossRefGoogle Scholar
  20. 11.20.
    G. Lucovsky, L.S. Sremaniak, T. Mowrer T and J.L. Whitten, J. Non-Cryst. Solids 326, 1, (2003)CrossRefGoogle Scholar
  21. 11.21.
    R.B. Laughlin and J.D. Joannopoulos, Phys. Rev. B 16, 2942 (1977)CrossRefGoogle Scholar
  22. 11.22.
    D.J. Chadi, R.B. Laughlin and J.D. Joannopoulos, in [11.7], p. 55Google Scholar
  23. 11.23.
    I.P. Batra, in [11.17], p. 65Google Scholar
  24. 11.24.
    S.T. Pantelides and W.A. Harrison, Phys. Rev. B 13, 2667 (1976)CrossRefGoogle Scholar
  25. 11.25.
    A.G. Revesz and G.V. Gibbs, in The Physics of MOS Insulators, edited by G. Lucovsky, S.T. Pantelides and F.L. Galeener (Pergamon Press, New York, 1980), p. 92Google Scholar
  26. 11.26.
    G. Lucovsky and H. Yang, J. Vac. Sci. Tech. A 15, 836, (1997)CrossRefGoogle Scholar
  27. 11.27.
    J.L. Whitten and H. Yang, Int. J. Quantum Chem., Quantum Chem. Symp. 29, 41 (1995)Google Scholar
  28. 11.28.
    J.L. Whitten and H. Yang, Surf. Sci. Rep. 24, 55 (1996)CrossRefGoogle Scholar
  29. 11.29.
    J.L. Whitten and M. Hackmeyer, J. Chem. Phys. 51, 5584 (1969)CrossRefGoogle Scholar
  30. 11.30.
    J. Neufeind and K.-D. Liss, Bur. Bunsen Phys. Chem. 100, 1341 (1996)Google Scholar
  31. 11.31.
    H.R. Philipp, Solid State Commun. 44, 73 (1966)CrossRefGoogle Scholar
  32. 11.32.
    S.T. Pantelides, in [11.17], p. 80Google Scholar
  33. 11.33.
    C. Senemaud and M.T. Costa Lima, in [11.9], p.85Google Scholar
  34. 11.34.
    T.H. DiStefano, in [11.9], p. 362Google Scholar
  35. 11.35.
    G. Lucovsky G, IBM J. Res. and Develop. 43, 301 (1999) 301, and references thereinGoogle Scholar
  36. 11.36.
    G. Lucovsky, H. Yang, H. Niimi, J.W. Keister, J.E. Rowe, M.F. Thorpe and J.C. Phillips, J. Vac. Sci. Technol. B 18, 1742 (2000)CrossRefGoogle Scholar
  37. 11.37.
    F.J. Himpsel, F.R. McFeely, A. Taleb-Ibrahimi, Y.A. Yarmoff and G. Hollinger, Phys. Rev. B 38, 6084 (1988)CrossRefGoogle Scholar
  38. 11.38.
    J.W. Keister, J.E. Rowe, Y.-M. Lee, H. Niimi, G. Lucovsky and G.J. Lapeyre, unpublishedGoogle Scholar
  39. 11.39.
    H. Yang, H. Niimi, J.W. Keister, G. Lucovsky and J.E. Rowe, IEEE Electron Device Lett. 21, 76 (2000)CrossRefGoogle Scholar
  40. 11.40.
    D.R. Lee, G. Lucovsky, M.R. Denker and C. Magee, J. Vac. Sci. Technol. A 13, 1671 (1995)CrossRefGoogle Scholar
  41. 11.41.
    H. Niimi and G. Lucovsky, J. Vac. Sci. Technol. A 17, 3185 (1999); B 17, 2610 (1999)CrossRefGoogle Scholar
  42. 11.42.
    M. Weldon, K.T. Queeny, Y.J. Chabal, B. Stefanov and K. Raghavachai, J. Vac. Sci. Technol. B 17, 1795 (1999)CrossRefGoogle Scholar
  43. 11.43.
    D.E. Muller et al., Nature 399, 758 (1999)CrossRefGoogle Scholar
  44. 11.44.
    L.C. Feldman, I, Stensgaard, P.J. Silverman and T.E. Jackman, in [11.17], p. 339Google Scholar
  45. 11.45.
    G. Lucovsky and J.C. Phillips, J. Non-Cryst. Solids 227, 1221 (1998)CrossRefGoogle Scholar
  46. 11.46.
    G. Lucovsky, Y. Wu, H. Niimi, V. Misra, and J.C. Phillips, Appl. Phys. Lett. 74, 2005 (1999)CrossRefGoogle Scholar
  47. 11.47.
    G. Lucovsky, A. Rozaj-Brvar and R.F. Davis, in The Structure of Non-Crystalline Materials 1982, edited by P.H. Gaskell, J.M. Parker and E.A. Davis (Taylor and Francis, London, 1983), p. 193Google Scholar
  48. 11.48.
    B. Rayner, H. Niimi, R. Johnson, R. Therrien, G. Lucovsky and F.L. Galeener, AIP Conf. Proc. 550, 149 (2001)CrossRefGoogle Scholar
  49. 11.49.
    G.B. Rayner Jr., D. Kang, Y. Zhang and G. Lucovsky, J. Vac. Sci. Technol. B 20, 1748 (2002)CrossRefGoogle Scholar
  50. 11.50.
    J.C. Phillips and X. Kerner, Solid State Commun. 117, 47 (2001)Google Scholar
  51. 11.51.
    L. Pauling, The Nature of the Chemical Bond, 3rd edn (Cornell University Press, Ithaca, NY. 1936)Google Scholar
  52. 11.52.
    R.T. Sanderson, Chemical Bonds and Bond Energy (Academic Press, New York 1971)Google Scholar
  53. 11.53.
    H.B. Gray, Electrons and Chemical Bonding (W.A. Benjamin, New York, 1962), Chap. 9Google Scholar
  54. 11.54.
    C.J. Ballhausen and H.B. Gray, Molecular Orbital Theory (W.A. Benjamin, New York, 1964), Chap. 8Google Scholar
  55. 11.55.
    P.A. Cox. Transition Metal Oxides (Oxford Science Publications, Oxford, 1992)Google Scholar
  56. 11.56.
    L.A. Grunes, R.D. Leapman, C.D. Walker, R. Hoffman and A.B. Kunz, Phys. Rev. B 25, 7157 (1982)CrossRefGoogle Scholar
  57. 11.57.
    Y. Zhang, unpublishedGoogle Scholar
  58. 11.58.
    J. Robertson and C.W. Chen, Appl. Phys. Lett. 74, 1164 (1999)Google Scholar
  59. 11.59.
    J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000)CrossRefGoogle Scholar
  60. 11.60.
    G. Lucovsky, Microelectronic Reliability 43, 1417 (2003)CrossRefGoogle Scholar
  61. 11.61.
    R.S. Johnson, G. Lucovsky and J. Hong, J. Vac. Sci. Technol. A 19, 1353 (2001)CrossRefGoogle Scholar
  62. 11.62.
    R.S. Johnson, G. Lucovsky and J. Hong, J. Vac. Sci. Technol. B 19, 1606 (2001)CrossRefGoogle Scholar
  63. 11.63.
    R.S. Johnson, G. Lucovsky and J.G. Hong, Microelectronic Engineering 59, 385 (2001)CrossRefGoogle Scholar
  64. 11.64.
    G. Lucovsky, G.B. Rayner Jr., D. Kang, G. Appel, R.S. Johnson, Y. Zhang, D.E. Sayers, H. Ade and J.L. Whitten, Appl. Phys. Lett. 79, 1775 (2001)CrossRefGoogle Scholar
  65. 11.65.
    G. Lucovsky, Y. Zhang, G.B. Rayner Jr. et al., J. Vac. Sci. Technol. B 20, 1739 (2002)CrossRefGoogle Scholar
  66. 11.66.
    C.C. Fulton (unpublished)Google Scholar
  67. 11.67.
    G.B. Rayner, D. Kang and G. Lucovsky, J. Vac. Sci. Technol. B 21, 1783 (2003)CrossRefGoogle Scholar
  68. 11.68.
    S. Miyazaki, M. Narasak, M. Ogasawaga and M. Hirose, Microelectronic Engineering 59, 373 (2001)CrossRefGoogle Scholar
  69. 11.69.
    D.E. Raymaker, J.S. Murday, N.H. Turner, C. Moore and M.G. Legally, in [11.9], p. 99Google Scholar
  70. 11.70.
    S. Miyazaki and M. Hirose, AIP Conf. Proc. 550, 89 (2000)CrossRefGoogle Scholar
  71. 11.71.
    J.G. Hong, PhD. Dissertation, North Carolina State University (2004)Google Scholar
  72. 11.72.
    N.A. Stoute, G. Lucovsky and D.E. Aspnes (unpublished)Google Scholar
  73. 11.73.
    H. Sato, T. Nango, T. Miyagawa, T. Katagiri, K.S. Seol and Y. Ohki, J. Appl. Phys. 92, 1106 (2002)CrossRefGoogle Scholar
  74. 11.74.
    C.L. Hinkle, J.G. Hong and G. Lucovsky, Microelectronic Engineering 72, 257 (2004)CrossRefGoogle Scholar
  75. 11.75.
    W. Franz, Handbuch der Physik, Vol. XVIII, ed. by S. Flugge (Springer, Berlin 1965) p. 155Google Scholar
  76. 11.76.
    J. Maserjian, J. Vac. Sci. Tech. 11, 996 (1974)CrossRefGoogle Scholar
  77. 11.77.
    K.F. Schuegraf, C.C. King and C.-M. Hu, 1992 VLSI SymposiumGoogle Scholar
  78. 11.78.
    H-Y. Yang, H. Niimi and G. Lucovsky, J. Appl. Phys. 83, 2327 (1998)CrossRefGoogle Scholar
  79. 11.79.
    E.M. Vogel et al., IEEE Trans. Elec. Dev. 45, 1350 (1998)CrossRefGoogle Scholar
  80. 11.80.
    H. Yang and G. Lucovsky, IEEE-IEDM Digest, p. 245 (1999)Google Scholar
  81. 11.81.
    I. Kim, S. Han, J.G. Hong, C. Osburn and G. Lucovsky (unpublished)Google Scholar
  82. 11.82.
    H.H. Osten et al., in Extended Abstracts International Workshop on Gate Insulator, Nov. 1–2 2001, Tokyo, p. 100Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2005

Authors and Affiliations

  • G. Lucovsky
  • J.L. Whitten

There are no affiliations available

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