Micro- and Nano-Scale Diagnostic Techniques for Thermometry and Thermal Imaging of Microelectronic and Data Storage Devices

  • M. Asheghi
  • Y. Yang


Thermal Image Apply Physic Letter Atomic Force Microscope Cantilever Vertical Cavity Surface Emit Laser Light Data Storage Device 
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  1. Almond, D.P., Nokrach, P., Stokes, E.W.R., Porch, A., Foulds, S.A.L., Wellhofer, F., Powell, J.R., and Abell, J.S., 2000, “Modulated optical reflectance characterization of high temperature superconducting thin film microwave devices,” Journal of Applied Physics, Vol. 87, No. 12, pp. 8628–8635.CrossRefGoogle Scholar
  2. Amerasekera, A., Van den Abeelen, W., Van Roozendaal, L., Hannemann, M., and Schofield, P., 1992, “ESD failure modes: characteristics mechanisms, and process influences,” IEEE Transactions on Electron Devices, Vol. 39, No. 2, pp. 430–436.CrossRefGoogle Scholar
  3. Arnold, E., Pein, H., and Herko, S.P., 1994, “Comparison of self-heating effects in bulksilicon and SOI high-voltage devices,” International Electron Devices Meeting 1994. Technical Digest, pp. 947, 813–816.Google Scholar
  4. Asheghi, M., 1999, “Thermal Transport Properties of Silicon Films,” Ph.D. Thesis, Stanford University, Stanford, CA.Google Scholar
  5. Asheghi, M., Leung, Y.K., Wong, S.S., and Goodson, K.E., 1997, “Phonon-boundary scattering in thin silicon layers,” Applied Physics Letters, Vol. 71, pp. 1798–1800.CrossRefGoogle Scholar
  6. Asheghi, M., Touzelbaev, M.N., Goodson, K.E., Leung, Y.K., and Wong, S.S., 1998, “Temperature dependent thermal conductivity of single-crystal silicon layers in SOI substrates,” Journal of Heat Transfer, Vol. 120, pp. 30–36.Google Scholar
  7. Aszodi, G., Szabon, J., Janossy, I., and Szekely, V., 1981, “High resolution thermal mapping of microcircuits using nematic liquid crystals,” Solid-State Electronics, Vol. 24, No. 12, pp. 1127–1133.Google Scholar
  8. Banerjee, K., Ting, L., Cheung, N., and Hu, C.-M., 1996, “Impact of high current stress conditions on VLSI interconnect electromigration reliability evaluation,” Proceedings Thirteenth International VLSI Multilevel Interconnection Conference (VMIC), pp. 628, 289–294.Google Scholar
  9. Barton, D.L., 1994, “Fluorescent microthermographic imaging (IC failure analysis),” ISTFA’ 94. Proceedings of the 20th International Symposium for Testing and Failure Analysis, pp. 87–95.Google Scholar
  10. Barton, D.L., and Tangyunyong, P., 1996, “Fluorescent microthermal imaging-theory and methodology for achieving high thermal resolution images,” Microelectronic Engineering, Vol. 31, No. 1–4, pp. 271–279.Google Scholar
  11. Beck, F., 1986, “Liquid crystal thermography localizes faults on a chip,” Elektronik, Vol. 35, No. 13, pp. 82–84, 86–88, 91–92.Google Scholar
  12. Ben-Ami, U., Tessler, N., Ben-Ami, N., Nagar, R., Fish, G., Lieberman, K., Eisenstein, G., Lewis, A., Nielsen, J.M., and Moeller-Larsen, A., 1996, “Near-infrared contact mode collection near-field optical and normal force microscopy of modulated multiple quantum well lasers,” Applied Physics Letters, Vol. 68, No. 17, pp. 2337–2339.CrossRefGoogle Scholar
  13. Bennett, G.A. and Briles, S.D., 1989, “Calibration procedure developed for IR surface-temperature measurements,” IEEE Transactions on Components, Hybrids, and Manufacturing Technology, Vol. 12, No. 4, pp. 690–695.CrossRefGoogle Scholar
  14. Bethe H. A., 1944, “Theory of diffraction by small holes,” Physical Review, No. 66, pp. 163–182.CrossRefMATHMathSciNetGoogle Scholar
  15. Betzig, E. and Trautman, J.K., 1992, “Near-field optics: microscopy, spectroscopy, and surface modification beyond the diffraction limit,” Science, Vol. 257, No. 5067, pp. 189–195.Google Scholar
  16. Betzig, E., Trautman, J.K., Harris, T.D., Weiner, J.S., and Kostelak, R.L., 1991, “Breaking the diffraction barrier: optical microscopy on a nanometric scale,” Science, Vol. 251, No. 5000, pp. 1468–1470.Google Scholar
  17. Bison, P.G., Grinzato, E., Marinetti, S., and Muscio, A., 2000, “Diffusivity measurement of thick samples by thermography and heating-cooling technique,” Proc. SPIE, Vol. 4020, pp. 137–142.Google Scholar
  18. Blackburn, D.L., 1988, “A review of thermal characterization of power transistors,” Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium, pp. 151–157.Google Scholar
  19. Boccara, A.C., Fournier, D., and Badoz, J., 1980, “Thermo-optical spectroscopy: detection by the mirage effect,” Applied Physics Letters, Vol. 36, No. 2, pp. 130–132.CrossRefGoogle Scholar
  20. Boeuf, F., Skotnicki, T., Monfray, S., Julien, C., Dutartre, D., Martins, J., Mazoyer, P., Palla, R., Tavel, B., f, Ribot, P., Sondergard, E., and Sanquer, M., 2001, “16 nm planar NMOSFET manufacturable within state-of-the-art CMOS process thanks to specific design and optimization,” Electron Devices Meeting, IEDM’ 01 Technical Digest., International, pp.637–640.Google Scholar
  21. Boudreau, B.D., Raja, J., Hocken, R.J., Patterson, S.R., and Patten, J., 1997, “Thermal imaging with near-field microscopy,” Review of Scientific Instruments, Vol. 68, No. 8, pp. 3096–3098.CrossRefGoogle Scholar
  22. Brorson, S.D., Fujimoto, J.G., and Ippen, E.P., 1987, “Femtosecond electronic heat-transport dynamics in thin gold films,” Physical Review Letters, Vol. 59, No. 17, pp. 1962–1965.CrossRefGoogle Scholar
  23. Burgess, D., and Tan, P., 1984, “Improved sensitivity for hot spot detection using liquid crystals,” 22nd Annual Proceedings on Reliability Physics, pp.119–121.Google Scholar
  24. Busse, G., and Rosencwaig, A., 1980, “Subsurface imaging with photoacoustics,” Applied Physics Letters, Vol. 36, No. 10, pp. 815–816.CrossRefGoogle Scholar
  25. Cahill, D.G., 1998, “Heat transfer in dielectric lthin films and at solid-solid interfaces,” in Microscale Energy Transport, C.L. Tien et al., eds., Taylor & Francis, New York, NY, pp. 95–117.Google Scholar
  26. Cain, B.M., Goud, P.A., and Englefield, C.G., 1992, “Electrical measurement of the junction temperature of an RF power transistor,” IEEE Transactions on Instrumentation and Measurement, Vol. 41, No. 5, pp. 663–665.CrossRefGoogle Scholar
  27. Chen, F., Zhai, J., Stancil, D.D., and Schlesinger, T.E., 2001, “Fabrication of very small aperture laser (VSAL) from a commercial edge emitting laser,” Japanese Journal of Applied Physics, Part 1, Vol. 40, No. 3B, pp. 1794–1795.Google Scholar
  28. Chen, G., 1996, “Nonlocal and Nonequilibrium Heat Conduction in the Vicinity of Nanoparticles,” Journal of Heat Transfer, Vol. 118, pp. 539–545.Google Scholar
  29. Claeys, W., Dilhaire, S., and Quintard, V., 1994, “Laser probing of thermal behavior of electronic components and its application in quality and reliability testing,” Microelectronic Engineering, Vol. 24, pp. 411–420.CrossRefGoogle Scholar
  30. Claeys, W., Dilhaire, S., Quintard, V., Dom, J.P., and Danto, Y., 1993, “Thermoreflectance optical test probe for the measurement of current-induced temperature changes in microelectronic components,” Quality and Reliability Engineering International, Vol. 9, No. 4, pp. 303–308.Google Scholar
  31. Deboy, G., Solkner, G., Wolfgang, E., and Claeys, W., 1996, “Absolute measurement of transient carrier concentration and temperature gradients in power semiconductor devices by internal IR-laser deflection,” Microelectronic Engineering, Vol. 31, No. 1–4, pp. 299–307.Google Scholar
  32. Doll, G.L., Eesley, G.L., Dresselhaus, M.S., Dresselhaus, G., Cassanho, A., Jenssen, H.P., and Gabbe, D.R., 1989, “Transient-thermoreflectance study of single-crystal lanthanum cuprate,” Physical Review B, Vol. 40, No. 13, pp. 9354–9357.CrossRefGoogle Scholar
  33. Durig, U., Pohl, D.W., and Rohner, F., 1986, “Near-field optical-scanning microscopy”, Journal of Applied Physics, Vol.59, No.10, pp. 3318–3327.Google Scholar
  34. Eckert, R., Freyland, J.M., Gersen, H., Heinzelmann, H., Schurmann, G., Noell, W., Staufer, U., and de Rooij, N.F., 2000, “Near-field fluorescence imaging with 32 nm resolution based on microfabricated cantilevered probes,” Applied Physics Letters, Vol. 77, No. 23, pp. 3695–3697.CrossRefGoogle Scholar
  35. Eesley, G.L., 1986, “Generation of nonequilibrium electron and lattice temperatures in copper by picosecond laser pulses,” Physical Review B, Vol. 33, No. 4, pp. 2144–2151.CrossRefGoogle Scholar
  36. Estreich, D.B., 1989, “A DC technique for determining GaAs MESFET thermal resistance,” IEEE Trans. Compon. Hybrids Manuf. Technol. (USA), IEEE Transactions on Components, Hybrids, and Manufacturing Technology, Vol. 12, No. 4, pp. 675–679.Google Scholar
  37. Fergason, J. L., “Liquid crystals in nondestructive testing,” Applied Optics, Vol. 7, No. 9, pp. 1729–1737.Google Scholar
  38. Fletcher, D.A., Crozier, K.B., Quate, C.F., Kino, K.S., Goodson, K.E., Simanovskii, D., and Palanker, D.V., 2000, “Near-field infrared imaging with a microfabricated solid immersion lens,” Applied Physics Letters, Vol. 77, pp. 2109–2111.Google Scholar
  39. Fletcher, D.A., Webb, N.U., Kino, G.S., Quate, C.F., and Goodson K.E., 2001, “Thermal Microscopy with a Microfabricated Solid Immersion Lens,” Proc. IEEE/LEOS International Conference on Optical MEMS, Okinawa, Japan.Google Scholar
  40. Fournier, D., and Boccara, A.C., 1987, Phatoacoustic and Thermal Wave Phenomena in Semiconductors, A. Mandelis (ed.), Elsevier North-Holland, New York.Google Scholar
  41. Furbock, C., Pogany, D., Litzenberger, M., Gornik, E., Seliger, N., Gossner, H., Muller-Lynch, T., Stecher, M., and Werner, W., 1999, “Interferometric temperature mapping during ESD stress and failure analysis of smart power technology ESD protection devices,” Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 1999, pp. 241–250.Google Scholar
  42. Furbock, C., Seliger, N., Pogany, D., Litzenberger, M., Gornik, E., Stecher, M., Gosser, H., and Werner, W., 1998, “Backside laserprober characterization of thermal effects during high current stress in smart power ESD protection devices,” International Electron Devices Meeting 1998. Technical Digest, pp. 1080, 691–694.Google Scholar
  43. Goodson, K.E. and Asheghi, M., 1997, “Near-Field optical thermometry,” Microscale Thermophysical Engineering, Vol. 1, pp. 225–235.Google Scholar
  44. Goodson, K.E. and Flik, M.I., 1994, “Solid-Layer thermal-conductivity measurement techniques,” Applied Mechanics Reviews, Vol. 47, pp. 101–112.CrossRefGoogle Scholar
  45. Goodson, K.E., Flik, M.I., Su, L.T., and Antoniadis, D.A., 1994, “Prediction and measurement of the thermal conductivity of amorphous dielectric layers,” Transactions of the ASME. Journal of Heat Transfer, Vol. 116, No. 2, pp. 317–324.Google Scholar
  46. Goodson, K.E., Flik, M.I., Su, L.T., and Antoniadis, D.A., 1995, “Prediction and measurement of temperature fields in silicon-on-insulator electronic circuits,” ASME Journal of Heat Transfer, Vol. 117, pp. 574–581.Google Scholar
  47. Goodson, K.E., Ju, Y.S., and Asheghi, M., 1998, “Thermal phenomena in semiconductor devices and interconnects,” in Microscale Energy Transport, C.L. Tien et al., eds., Taylor & Francis, New York, NY, pp. 229–293.Google Scholar
  48. Goodson, K.E., Käding, O.W., Rösler, M., and Zachai, R., 1995a, “Thermal conduction normal to diamond-silicon boundaries,” Applied Physics Letters, Vol. 66, pp. 3134–3136.CrossRefGoogle Scholar
  49. Goodson, K.E., Käding, O.W., Rösler, M., and Zachai, R., 1995b, “Experimental investigation of thermal conduction normal to diamond-Silicon boundaries,” Journal of Applied Physics, Vol. 77, pp. 385–392.CrossRefGoogle Scholar
  50. Goodson, K.E. and Ju, Y.S., 1999, “Heat conduction in novel electronic films,” in the Annual Review of Materials Science, E.N. Kaufmann et al., eds., Annual Reviews, Palo Alto, CA, Vol. 29, pp. 261–293.Google Scholar
  51. Gorlich, S., 1992, “Electron beam testing versus laser beam testing,” Microelectronic Engineering, Vol. 16, No. 1–4, pp. 349–366.Google Scholar
  52. Goto, K., Sato, T., and Mita, S., 1993, “Proposal of optical floppy disk head and preliminary spacing experiment between lensless head and disk,” Japanese Journal of Applied Physics, Vol. 32, No. 11B, pp. 5459–5460.Google Scholar
  53. Goto, N., 1998, “Plasma density control in a low-pressure RF resonant field,” Journal of Physics D (Applied Physics), Vol. 31, No. 4, pp. 428–433.Google Scholar
  54. Grober, R.D., Schoelkopf, R.J., and Prober, D.E, 1997, “Optical antenna: towards a unity efficiency near-field optical probe,” Applied Physics Letters, Vol. 70, No. 11, pp. 1354–1356.CrossRefGoogle Scholar
  55. Hammiche, A., Hourston, D.J., Pollock, H.M., Reading, M., and Song, M., 1996, “Scanning thermal microscopy: subsurface imaging, thermal mapping of polymer blends, and localized calorimetry,” Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), Vol. 14, No. 2, pp. 1486–1491.Google Scholar
  56. Heisig, S., Rudow, O., and Oesterschulze, E., 2000, “Scanning near-field optical microscopy in the near-infrared region using light emitting cantilever probes,” Applied Physics Letters, Vol. 77, No. 8, pp. 1071–1073.CrossRefGoogle Scholar
  57. Hohlfeld J., Muller J.G., Wellershoff S.S., and Matthias E., 1997, “Time-resolved thermoreflectivity of thin gold films and its dependence on film thickness,” Applied Physics, Vol. B64, pp. 387–390.Google Scholar
  58. Inokawa, H., Fujiwara., A., and Takahashi, Y., 2001, “A multiple-valued logic with merged single-electron and MOS transistors”, Electron Devices Meeting, IEDM’ 01 Technical Digest., International, pp.147–150.Google Scholar
  59. Jomaah, J., Ghibaudo, G., and Balestra, F., 1995, “Analysis and modeling of self-heating effects in thin-film SOI MOSFETs as a function of temperature,” Solid-State Electronics, Vol. 38, No.3, pp. 615–618.CrossRefGoogle Scholar
  60. Ju, Y.S., Käding, O.W., Leung, Y.K., Wong, S.S., and Goodson, K.E., 1997, “Shorttimescale thermal mapping of semiconductor devices,” IEEE Electron Device Letters, Vol. 18, No. 5, pp. 169–171.CrossRefGoogle Scholar
  61. Ju, Y.S. and Goodson, K.E., 1999, “Phonon scattering in silicon films with thickness of order 100 nm,” Applied Physics Letters, Vol. 74, pp. 3005–3007.CrossRefGoogle Scholar
  62. Karns, D., Zhai, J., Herget, P., Song, H., Gamble, A., Stancil, D.D., Vijaya Kumar, B.V.K., and Schlesinger, T.E., 2000, “To 100 Gb/in/sup 2/ and beyond in magneto-optic recording,” Proc. SPIE, Vol. 4090, pp. 238–245.Google Scholar
  63. Katagiri, Y. and Ukita, H., 1989, “Improvement in signal-to-noise ratio of a longitudinally coupled cavity laser by internal facet reflectivity reduction,” Japanese Journal of Applied Physics, Vol. 28,Suppl. 28-3, pp. 177–182.Google Scholar
  64. Kolodner, p. and Tyson, J.A., 1983, “Remote thermal imaging with 0.7 µm spatial resolution using temperature-dependent fluorescent thin films,” Applied Physics Letters, Vol. 42, No. 1, pp. 117–119.CrossRefGoogle Scholar
  65. Kolodner, p. and Tyson, J.A., 1984, “Microscopic fluorescent imaging of surface temperature profiles with 0.01 degrees C resolution,” Applied Physics Letters, Vol. 40, No. 9, pp. 782–784.Google Scholar
  66. Kölzer, J. and Otto, J., 1991, “Electrical characterization of megabit DRAMs. 11. Internal testing,” IEEE Design & Test of Computers, Vol. 8, No. 4, pp. 39–51.Google Scholar
  67. Kölzer, J., Oesterschulze, E., and Deboy, G., 1996, “Thermal imaging and measurement techniques for electronic materials and devices,” Microelectronic Engineering, Vol. 31, pp. 251–270.Google Scholar
  68. Kölzer, J., Boit, C., Dallmann, A., Deboy, G., Otto, J., and Weinmann, D., 1992, “Quantitative emission microscopy,” Journal of Applied Physics, Vol. 71, No. 11, pp. 23–41.Google Scholar
  69. Kwok, T., Nguyen, T., Ho, P., and Yip, S., 1987, “Current density and temperature distributions in multilevel interconnection with studs and vias,” 25th Annual Proceedings: Reliability Physics pp. viii+279, 130–135.Google Scholar
  70. Labrunie, G. and Robert, J., 1973, “Transient behaviour of the electrically controlled birefringence in a nematic liquid crystal,” Journal of Applied Physics, Vol. 44, No. 11, pp. 4869–4874.CrossRefGoogle Scholar
  71. Langer, G., Hartmann, J., and Reichling, M., 1997, “Thermal conductivity of thin metallic films measured by photothermal profile analysis,” Review of Scientific Instruments, Vol. 68, No.3, pp. 1510–1513.CrossRefGoogle Scholar
  72. Leung, Y.K., Suzuki, Y., Goodson, K.E., and Wong, S.S., 1995, “Self-heating effect in lateral DMOS on SOI,” Proceedings of the 7th International Symposium on Power Semiconductor Devices and Ics, pp. 136–140.Google Scholar
  73. Liu, W., and Yuksel, A., 1995, “Measurement of junction temperature of an AIGaAs/GaAs heterojunction bip transistor operating at large power densities,” IEEE Transaction Electron Device, Vol. 42, pp. 358–360.Google Scholar
  74. Maiti, B., Tobin, P.J., Hobbs, C., Hegde, R.I., Huang, F., O’Meara, D.L., Jovanovic, D., Mendicino, M., Chen, J., Connelly, D., Adetutu, O., Mogab, J., Candelaria, J., and La, L.B., 1998, “PVD TiN metal gate MOSFETs on bulk silicon and fully depleted silicon-on-insulator (FDSOI) substrates for deep sub-quarter micron CMOS technology,” Electron Devices Meeting, IEDM’ 98 Technical Digest., International, p.781–784.Google Scholar
  75. Majumdar, A. and Varesi, J., 1998, “Nanoscale temperature distributions measured by scanning Joule expansion microscopy,” Journal of Heat Transfer, Vol. 120, No. 2 pp. 297–305.Google Scholar
  76. Majumdar, A., Carrejo, J.P., and Lai, J., 1993, “Thermal imaging using the atomic force microscope,” Applied Physics Letters, Vol. 62, No. 20, pp. 2501–2503.CrossRefGoogle Scholar
  77. Majumdar, A., Lai, J., Chandrachood, M., Nakabeppu, O., Wu, Y., and Shi, Z., 1995, “Thermal imaging by atomic force microscopy using thermocouple cantilever probes,” Review of Scientific Instruments, Vol. 66, No. 6, pp. 3584–3592.CrossRefGoogle Scholar
  78. Majumdar, A., 1999, “Scanning thermal microscopy,” Annual Review of Materials Science, Vol. 29, pp. 505–585.CrossRefGoogle Scholar
  79. Majumdar, A., Mao, M., Perazzo, T., Zhao, Y., Kwon, O., Varesi, J., and Norton, P., 2000, “Infrared vision using uncooled optomechanical camera,” Proc. SPIE, Vol. 3948, pp. 74–79.Google Scholar
  80. Mansfield, S.M. and Kino, G.S., 1990, “Solid immersion microscope,” Applied Physics Letters, Vol. 57, No. 24, pp. 2615–2616.CrossRefGoogle Scholar
  81. Martel R., Wong, P., Chan, K., and Avouris, P., 2001, “Carbon nanotube field effect transistors for logic applications”, Electron Devices Meeting, IEDM’ 01 Technical Digest., International, pp.159–162.Google Scholar
  82. Mautry, p. G., and Trager, J., 1990, “Self-heating and temperature measurement in sub-µm-MOSFETs,” Proceedings of the IEEE International Conference on Microelectronic Test Structure, Vol. 3, pp. 221–226.Google Scholar
  83. Maywald, M., Pylkki, R.J., and Balk, L.J., 1994, “Imaging or local thermal and electrical conductivity with scanning force microscopy,” Scanning Microscopy, Vol. 8, No. 2, pp. 181–188.Google Scholar
  84. Maloney, T.J. and Khurana, N., 1985, “Transmission line pulsing techniques for circuit modeling of ESD phenomena,” Proceedings of EOS/ESD Symposium, pp. 49–54.Google Scholar
  85. Miklos, A., and Lorincz, A., 1988, “Transient thermoreflectance of thin metal films in the picosecond regime,” Journal of Applied Physics, Vol. 63, No. 7, pp. 2391–2395.Google Scholar
  86. Mitsuhashi, Y., Shimada, J., and Mitsutsuka, S., 1981, “Voltage change across the self-coupled semiconductor laser,” IEEE Journal of Quantum Electronics, Vol. QE-17, No. 7, pp. 1216–1225.Google Scholar
  87. Nakabeppu, O., Chandrachood, M., Wu, Y., Lai, J., and Majumdar, A., 1994, “Scanning thermal imaging microscopy using composite cantilever probes,” Applied Physics Letters, Vol. 66, No. 6, p.694–696.Google Scholar
  88. Naoyuki, T., Tetsuya, B., and Akira, O., 1997, “Development of a thermal diffusivity measurement system with a picosecond thermoreflectance technique,” High Temperatures-High Pressures, Vol. 29, pp. 59–66.Google Scholar
  89. Negus, K.J., Franklin, R.W., and Yovanovich, M.M., 1989, “Thermal modeling and experimental techniques for microwave bipolar devices,” IEEE Transaction Component Hybrids Manufacturing Technology. (USA), Vol. 12, No. 4, pp. 680–689.Google Scholar
  90. Nonnenmacher, M., and Wickramasinghe, H.K, 1992, “Scanning probe microscopy of thermal conductivity and subsurface properties,” Applied Physics Letters, Vol. 61, No. 2, pp. 168–170.CrossRefGoogle Scholar
  91. Novotny, L., and Pohl, D.W., 1995, “Light propagation in scanning near-field optical microscopy,” Photons and Local Probes. Proceedings of the NATO Advanced Research Workshop pp. 21–33.Google Scholar
  92. Oesterschulze, E., Stopka, M., and Kassing, R., 1994, “Photo-thermal characterization of solids and thin films by optical and scanning probe techniques,” Microelectronic Engineering, Vol. 24, No. 1–4, pp. 107–112.Google Scholar
  93. Oesterschulze, E., Hadjiiski, L., Stopka, M., and Kassing, R., 1995, “Laser interferometry and SThM-techniques for thermal characterization of thin films,” Materials Science Forum, Vol. 185–188, pp. 43–52.Google Scholar
  94. Oesterschulze, E., Stopka, M., Tochtrop-Mayr, M, Masseli, K., and Kassing, R., 1993, “Nondestructive evaluation of solids and deposited films by thermal-wave interferometry,” Applied Surface Science, Vol. 69, No. 1–4, pp. 65–68.Google Scholar
  95. Opsal, J., and Rosencwaig, A., 1985, “Thermal and plasma wave depth profiling in silicon,” Applied Physics Letters, Vol. 47, No. 5, pp. 498–500.CrossRefGoogle Scholar
  96. Paddock, C.A., and Eesley, G.L., 1986, “Transient thermoreflectance from thin metal films,” Journal of Applied Physics, Vol. 60, pp. 285–290.CrossRefGoogle Scholar
  97. Paesler, M.A., and Moyer, p. J., 1996, Near-Field Optics, Wiley, New York.Google Scholar
  98. Partovi, A., Peale, D., Wuttig, M., Murray, C.A., Zydzik, G., Hopkins, L., Baldwin, K., Hobson, W.S., Wynn, J., Lopata, J., Dhar, L., Chichester, R., and Yeh, J.H.-J., 1999, “High-power laser light source for near-field optics and its application to high-density optical data storage,” Applied Physics Letters, Vol. 75, No. 11, pp. 1515–1517.CrossRefGoogle Scholar
  99. Peters, L., 1993, “SOI takes over where silicon leaves off,” Semiconductor International, Vol. 16, No. 3, pp. 48–51.Google Scholar
  100. Picart, B., and Minguez, S.D., 1992, “Test method in voltage contrast mode using liquid crystals (VLSI),” Microelectronics and Reliability, Vol. 32, No. 11, pp. 1605–1613.CrossRefGoogle Scholar
  101. Picart, B., and Petit, O., 1990, “Internal noncontact testing method using ferroelectric liquid crystals (IC failure analysis),” Microelectronic Engineering, Vol. 12, No. 1–4, pp. 149–156.Google Scholar
  102. Pylkki, R.J., Moyer, P.J., and West, P.E., 1994, “Scanning near-field optical microscopy and scanning thermal microscopy,” Japanese Journal of Applied Physics, Vol. 33, No. 6, pp. 3785–3790.Google Scholar
  103. Quintard, V., Deboy, G., Dilhaire, S., Lewis, D., Phan, T., and Claeys, W., 1996, “Laser beam thermography of circuits in the particular case of passivated semiconductors,” Microelectronic Engineering, Vol. 24, pp. 291–298.Google Scholar
  104. Radmacher, M., Hillner, A.P.E., and Hansma, P.K., 1994, “Scanning nearfield optical microscope using microfabricated probes,” Review of Scientific Instruments, Vol. 65, No. 8, pp. 2737–2738.CrossRefGoogle Scholar
  105. Raha, P., Ramaswamy, S., and Rosenbaum, E., 1997, “Heat flow analysis for EOS/ESD protection device design in SOI technology,” IEEE Transactions on Electron Devices, Vol. 44, pp. 464–471.CrossRefGoogle Scholar
  106. Ramo, S., Whinnery, J.R., and Van Duzer, T., 1984, Fields and waves in communication electronics, 2 nd edition”, Wiley; New York, NY, USA, pp. 817.Google Scholar
  107. Rantala, J., Lanhua, W., Kuo, P.K., Jaarinen, J., Luukkala, M., and Thomas, R.L., 1993, “Determination of thermal diffusivity of low-diffusivity materials using the mirage method with multiparameter fitting,” Journal of Applied Physics, Vol. 73, pp. 2714–2723.CrossRefGoogle Scholar
  108. Rausch, M., Kaltenbacher, M., Landes, H., and Lerch, R., 2001, “Numerical computation of the emitted noise of power transformers,” The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, Vol. 20, No. 2, pp. 636–648.MATHGoogle Scholar
  109. Roberts D. M. and Gustafson, T.L., 1986, “Time modulation techniques for picosecond to microsecond pump-probe experiments using synchronously pumped dye lasers,” Optics Communications, Vol. 56, No. 5, pp. 334–338.CrossRefGoogle Scholar
  110. Roger, J.P., Lepoutre, F., Fournier, D., and Boccara, A.C., 1987, “Thermal diffusivity measurement of micron-thick semiconductor films by mirage detection,” Thin Solid Films, Vol. 155, No. 1, pp. 165–174.CrossRefGoogle Scholar
  111. Schoenlein, R.W., Lin W. Z., Fujimoto, J.G., and Eesley G.L., 1987, “Femtosecond studies of nonequilibrium electronic process in metals”, Physical Review Letters, Vol. 58, No. 16, pp. 2680–2683.CrossRefGoogle Scholar
  112. Skumanich, A., Dersch, H., Fathallah, M., and Amer, N.M., 1987, “A contactless method for investigating the thermal properties of thin films,” Applied Physics A (Solids and Surfaces), Vol. A43, No. 4, pp. 297–300.Google Scholar
  113. Sodnik, Z., Tiziani, Hj., Hess, P., and Pelzl, J. (eds.), 1988, Photoacoustic and photothermal phenomena III, Springer Verlag Berlin, pp. 400.Google Scholar
  114. Solkner, G., Wolfgang, E., and Bohm, C., 1994, “Advanced diagnosis techniques for submicron integrated circuits,” ESSCIRC’ 94. Twentieth European Solid-State Circuits Conference. Proceedings, pp. xvi+314, 11–17.Google Scholar
  115. Soref, R.A., and Bennett, B.R., 1987, “Electrooptical effects in silicon,” IEEE Journal of Quantum Electronics, Vol. QE-23, No. 1, pp. 123–129.Google Scholar
  116. Soref, R.A., and Rafuse, M.J., 1972, “Electrically controlled birefringence of thin nematic films (Light values),” Journal of Applied Physics, Vol. 453, No. 5, pp. 2029–2037.Google Scholar
  117. Su., L.T., Antoniadis, D.A., Arora, N.D., Doyle, B.S., and Krakauer, D.B., 1994, “SPICE model and parameters for fully-depleted SOI MOSFET’s including self-heating,” IEEE Electron Device Letters, Vol. 15, No. 10, pp. 374–376.CrossRefGoogle Scholar
  118. Sverdrup, P.G., Ju, Y.S., and Goodson, K.E., 1998, “Sub-continuum simulations of heat conduction in silicon-on-insulator transistors,” Journal of Heat Transfer, Vol. 120, pp. 30–36.Google Scholar
  119. Sze, S.M., 1998, “VLSI technology,” McGraw-Hill, New York.Google Scholar
  120. Tang, A.P.S., and Cheng, K.S., 2001, “Thermal X-ray pulses resulting from pulsar glitches,” Astrophysical Journal, Vol. 549, No. 2, p.1039–1049.CrossRefMathSciNetGoogle Scholar
  121. Tenbroek, B.M., Redman-White, W., Lee, M.S.L., and Uren, M.J., 1996, “Electrical measurement of silicon film and oxide thicknesses in partially depleted SOI technologies,” Solid-State Electronics, Vol. 39, No. 7, pp. 1011–1014.CrossRefGoogle Scholar
  122. Terris, B.D., Mamin, H.J., and Rugar, D., 1996, “Near-field optical data storage,” Applied Physics Letters, Vol. 68, No. 2, pp. 141–143.CrossRefGoogle Scholar
  123. Toigo, J.W., 2000, “Avoiding the data crunch,” Scientific America, Vol. 282, No. 5, pp. 58–74.Google Scholar
  124. Touzelbaev, M.N. and Goodson, K.E, 2001, “Impact of experimental timescale and geometry on thin-film thermal property measurements,” International Journal of Thermophysics, Vol. 22, pp. 243–263.CrossRefGoogle Scholar
  125. Wallash, A.J., 2000, “ESD in magnetic recording: past, present and future,” www.wallash.com.Google Scholar
  126. Weaver, J.M.R., Walpita, L.M., and Wickramasinghe, H.K, 1989, “Optical absorption microscopy and spectroscopy with nanometer resolution,” Nature, Vol. 342, No. 6251, pp. 783–785.CrossRefGoogle Scholar
  127. Williams, C.C., and Wickramasinghe, H.K., 1986, “Scanning thermal profiler,” Applied Physics Letters, Vol. 49, No. 23, pp. 1587–1589.CrossRefGoogle Scholar
  128. Williams, C.C., and Wickramasinghe, H.K., 1988, “Thermal and photothermal imaging on a sub 100 nanometer scale,” Proc. SPIE, Vol. 897, pp. 129–134.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2005

Authors and Affiliations

  • M. Asheghi
    • 1
  • Y. Yang
    • 1
  1. 1.Department of Mechanical EngineeringCarnegie Mellon UniversityPittsburgh

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