Hetero Field Effect Transistors (HFETs)

Part of the NanoScience and Technology book series (NANO)


Carrier Density Gate Length SiGe Layer Metal Gate Modulation Dope 
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7.5 Further Reading

  1. 1.
    M.J. Kelly, Low Dimensional Semiconductors: Materials, Physics, Technology, Devices” OUP, Oxford (1995)Google Scholar
  2. 2.
    J.H. Davies, The Physics of Low Dimensional Semiconductors, CUP, Cambridge (1998)Google Scholar
  3. 3.
    S.M. Sze, Semiconductor Devices: Physics and Technology, 2nd Edition, John Wiley and Sons, New York (2002)Google Scholar
  4. 4.
    L.D. Nguyen, L.E. Larson and U.K. Mishra, Proc. IEEE, 80, 494 (1992)CrossRefGoogle Scholar
  5. 5.
    D.J. Paul, Semiconductor Science and Technology 19, R59 (2004)CrossRefGoogle Scholar
  6. 6.
    L. Risch, Silicon Nanoelectronics: the next 20 years, in Silicon: Evolution and Future of a Technology, (P. Siffert, E. Krimmel, eds.), Springer, Berlin (2004)Google Scholar
  7. 7.
    T.J. Drummond, H. Morkoc, K. Lee, M. Shur, IEEE-EDL 3, 311 (1982)Google Scholar
  8. 8.
    H. Heinrich, Modulation-Doped Filed-Effect Transistors, IEEE Press, New York (1991)Google Scholar
  9. 9.
    E. Kasper, S. Heim, Appl. Surf. Sci 224, 3 (2004)CrossRefGoogle Scholar
  10. 10.
    N. Arora, MOSFET models for VLSI circuit simulation, Springer-Verlag, Wien (1993)Google Scholar
  11. 1.
    S. Karmalkar and G. Ramesh, IEEE-ED 47, 11 (2002)Google Scholar

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© Springer-Verlag Berlin Heidelberg 2005

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