Heterostructure Bipolar Transistors - HBTs

Part of the NanoScience and Technology book series (NANO)


Bipolar Transistor Base Resistance Current Gain Base Doping Transit Frequency 
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6.5 Further Reading

  1. 1.
    Y. Taur and T.H. Ning, Fundamentals of Modern VLSI Devices, CUP, Cambridge (1998)Google Scholar
  2. 2.
    C.Y. Chang and S.M. Sze, ULSI Devices, John Wiley and Sons, New York (2000)Google Scholar
  3. 3.
    D.J. Paul, Semiconductor Science and Technology 19, R59 (2004)CrossRefGoogle Scholar
  4. 4.
    J.D. Cressler and G. Niu, Silicon-Germanium Heterojunction Bipolar Transistors, Artech House, Norwood (2003)Google Scholar
  5. 5.
    J. Eberhardt, E. Kasper, Solid-State Electronics 45, 2097 (2001)CrossRefGoogle Scholar
  6. 6.
    E. Kasper et al., Solid-State Electronics 48, 837 (2004)Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2005

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