Heterostructure Bipolar Transistors - HBTs
Part of the NanoScience and Technology book series (NANO)
KeywordsBipolar Transistor Base Resistance Current Gain Base Doping Transit Frequency
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6.5 Further Reading
- 1.Y. Taur and T.H. Ning, Fundamentals of Modern VLSI Devices, CUP, Cambridge (1998)Google Scholar
- 2.C.Y. Chang and S.M. Sze, ULSI Devices, John Wiley and Sons, New York (2000)Google Scholar
- 4.J.D. Cressler and G. Niu, Silicon-Germanium Heterojunction Bipolar Transistors, Artech House, Norwood (2003)Google Scholar
- 6.E. Kasper et al., Solid-State Electronics 48, 837 (2004)Google Scholar
© Springer-Verlag Berlin Heidelberg 2005