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Electronic Device Principles

Part of the NanoScience and Technology book series (NANO)

Keywords

Threshold Voltage Gate Voltage Metal Oxide Semiconductor Inversion Layer Bipolar Transistor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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5.4 Further Reading

  1. 1.
    Y. Taur and T.H. Ning, Fundamentals of Modern VLSI Devices, CUP, Cambridge (1998)Google Scholar
  2. 2.
    S.M. Sze, The Physics of Semiconductor Devices, 2nd Edition, John Wiley and Sons, New York (1981)Google Scholar
  3. 3.
    S.M. Sze, Modern Semiconductor Device Physics, John Wiley and Sons, New York (1998)Google Scholar
  4. 4.
    C.Y. Chang and S.M. Sze, ULSI Devices, John Wiley and Sons, New York (2000)Google Scholar
  5. 5.
    S.M. Sze, Semiconductor Devices: Physics and Technology, 2nd Edition, John Wiley and Sons, New York (2002)Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2005

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