Electronic Device Principles
Part of the NanoScience and Technology book series (NANO)
KeywordsThreshold Voltage Gate Voltage Metal Oxide Semiconductor Inversion Layer Bipolar Transistor
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5.4 Further Reading
- 1.Y. Taur and T.H. Ning, Fundamentals of Modern VLSI Devices, CUP, Cambridge (1998)Google Scholar
- 2.S.M. Sze, The Physics of Semiconductor Devices, 2nd Edition, John Wiley and Sons, New York (1981)Google Scholar
- 3.S.M. Sze, Modern Semiconductor Device Physics, John Wiley and Sons, New York (1998)Google Scholar
- 4.C.Y. Chang and S.M. Sze, ULSI Devices, John Wiley and Sons, New York (2000)Google Scholar
- 5.S.M. Sze, Semiconductor Devices: Physics and Technology, 2nd Edition, John Wiley and Sons, New York (2002)Google Scholar
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