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2.5 Further Reading

  1. J. Murota, B. Tillack, M. Caymax, J. Sturm, Y. Yasuda, S. Zaima, Proc. First Internat. SiGe Technology and Device Meeting, Appl. Surf. Sci., Vol. 224 (2004)

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  2. R. Waser, Nanoelectronics and Information Technology, Wiley-VCH, Weinheim (2003)

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  3. C.K. Maiti, N.B. Chakrabarti, S.K. Ray, Strained Silicon Heterostructures Materials and Devices, The Institution of Electrical Engineers, London (2001)

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  4. E. Kapser and K. Lyutovich, Properties of Silicon Germanium and SiGe:Carbon, EMIS Datareviews, Vol.24, INSPEC, London (2000)

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  5. M.A. Herman and H. Sitter, Molecular Beam Epitaxy: Fundamentals and Current Status, 2nd Edition, Springer-Verlag, Berlin (1996)

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  6. J.F.A. Nijs, Advanced Silicon and Semiconducting Silicon-Alloy Based Materials and Devices, IOP publishing, Bristol (1994)

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  7. F. Schaeffler, Semicond. Sci. Technol. 12, 1515 (1997)

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  8. E. Kasper, K. Lyutovich, Solid-State Electronics 48, 1257 (2004)

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© 2005 Springer-Verlag Berlin Heidelberg

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(2005). Material Science. In: Silicon Quantum Integrated Circuits. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-26382-9_2

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