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2.5 Further Reading
J. Murota, B. Tillack, M. Caymax, J. Sturm, Y. Yasuda, S. Zaima, Proc. First Internat. SiGe Technology and Device Meeting, Appl. Surf. Sci., Vol. 224 (2004)
R. Waser, Nanoelectronics and Information Technology, Wiley-VCH, Weinheim (2003)
C.K. Maiti, N.B. Chakrabarti, S.K. Ray, Strained Silicon Heterostructures Materials and Devices, The Institution of Electrical Engineers, London (2001)
E. Kapser and K. Lyutovich, Properties of Silicon Germanium and SiGe:Carbon, EMIS Datareviews, Vol.24, INSPEC, London (2000)
M.A. Herman and H. Sitter, Molecular Beam Epitaxy: Fundamentals and Current Status, 2nd Edition, Springer-Verlag, Berlin (1996)
J.F.A. Nijs, Advanced Silicon and Semiconducting Silicon-Alloy Based Materials and Devices, IOP publishing, Bristol (1994)
F. Schaeffler, Semicond. Sci. Technol. 12, 1515 (1997)
E. Kasper, K. Lyutovich, Solid-State Electronics 48, 1257 (2004)
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(2005). Material Science. In: Silicon Quantum Integrated Circuits. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-26382-9_2
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DOI: https://doi.org/10.1007/3-540-26382-9_2
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