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Structure, dynamics and growth mechanisms of metal-metal and metal-semiconductor interfaces by means of SEXAFS

  • Dominique Chandesris
  • Pascale Roubin
  • Giorgio Rossi
Conference paper
Part of the Topics in Current Chemistry book series (TOPCURRCHEM, volume 147)

Abstract

Structural information on the atomic arrangements at the early stage of formation of metal-metal, metal-semiconductor interfaces and semiconductor-semiconductor heterojunctions is needed along with the determination of the structure of the electron states in order to put on a complete experimental ground the discussion of the formation of solid-solid junctions. Amongst the structural tools that have been applied to the interface formation problem Surface-EXAFS1–4) is probably the best suited since the local configuration of the interface atoms can be directly measured independent from the presence of long range order or of well known bulk phases. Furthermore vibrational properties of monolayer interfaces can be measured by SEXAFS. We will discuss the applicability of SEXAFS to the interface formation problem. After a brief review of the merits of the technique, we will review selected interface studies: the chemisorption and epitaxy of a fcc Co monolayer on Cu(111) and Cu(110) with the analysis of the crystallographic and dynamical properties of the Co adsorbate, and the chemisorption stage and silicide nucleation stage for the Pt/Si(111) interface.

Keywords

Grazing Incidence Interlayer Distance Single Crystal Substrate Silicide Phase Total Electron Yield 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1988

Authors and Affiliations

  • Dominique Chandesris
    • 1
  • Pascale Roubin
    • 1
  • Giorgio Rossi
    • 1
  1. 1.Laboratoire pout l'Utilisation du Rayonnement Electromagnetique CNRS-CEA-MENUniversite' Paris-SudOrsayFrance

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