Ohmic and nonlinear transport of (TaSe4)2I under pressure
We present the effect of hydrostatic pressure on the resistivity of (TaSe4)2I in both ohmic and nonlinear regimes. The phase transition temperature of 262 K at ambiant pressure initially increases at the rute of 1 K/kbar, has a maximum and above 12 kbars it starts to decrease. The semiconducting energy gap in the Peierls state decreases by 50 K/kbar, i.e. 1.7%/kbar. The effect of pressure on the threshold field is also drastic. At 190 K it decreases from 2.0 V/cm at ambiant pressure to 0.8 V/cm at 12 kbars, but it continous to show the exponential temperature dependence. For the explanation of these data we propose a model whereby the temperature dependence of the threshold field depends on the normal carrier density.
KeywordsAmbiant Pressure Phase Transition Temperature Pressure Dependence Charge Density Wave Nonlinear Regime
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